Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of first drops of a target material through a first nozzle group selected from a plurality of nozzles to form a first elongated droplet; generating a first laser pulse to convert the first elongated droplet into plasma that generates a first extreme ultraviolet (EUV) radiation; reflecting the first EUV radiation by a collector mirror having an optical axis; generating a plurality of second drops of the target material through a second nozzle group selected from the plurality of nozzles to form a second elongated droplet, the second elongated droplet being oblique with the optical axis of the collector mirror at a different angle than the first elongated droplet.

Abstract: A semiconductor processing method includes: selecting a target state of a reticle based on a given data set, wherein the given data set comprises temperature profiles of the reticle correlated to a target overlay performance, and the target state is a state in which a deformation of the reticle is substantially unchanged; regulating the reticle to reach the target state; and performing an exposure process on a target workpiece by using the reticle.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: A machine learning method includes: distinguishing foregrounds and backgrounds of a first image to generate a first mask image; cropping the first image to generate second and third images; cropping the first mask image to generate second and third mask images, wherein a position of the second mask image and a position of the third mask image correspond to a position of the second image and a position of the third image, respectively; generating a first feature vector group of the second image and a second feature vector group of the third image by a model; generating a first matrix according to the first and second feature vector groups; generating a second matrix according to the second and third mask images; generating a function according to the first and second matrices; and adjusting the model according to the function.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of drops of a target material through a plurality of nozzles, adjacent two of the plurality of nozzles having a distance less than a width of a first one of the adjacent two of the plurality of nozzles, wherein the plurality of drops are aggregated to an elongated droplet; generating a laser pulse to convert the elongated droplet into plasma that generates an extreme ultraviolet (EUV) radiation; exposing a semiconductor substrate to the EUV radiation.

Abstract: A surgical positioning device comprises a base, an upper moving structure, a lower moving structure, an auxiliary operating element, and a plurality of encoders. The upper moving structure and the lower moving structure are coupled to the base individually, such that the upper moving structure and lower moving structure may move on a first plane and a second plane, respectively. The first plane is substantially parallel to the second plane. Each of the upper moving structure and lower moving structure comprise a holder respectively for holding the auxiliary operating element. The plurality of encoders measure the movement of the moving elements of the upper moving structure and the lower moving structure. A surgical tool may be adjusted and positioned by operating the auxiliary operating element to move the upper moving structure and the lower moving structure on the different planes, respectively.

Abstract: An image guided navigation system comprises a memory, a locator, a processor and a display. The memory stores a plurality of CT images and a software program. The locator is capable of indicating a direction to a surgical area, and the indicated direction of the locator is defined as a first direction. The processor is electrically connected to the memory and the locator. At least one corresponding image corresponding to the first direction is obtained from the plurality of CT images by the processor executing the software program. The at least one corresponding image comprises at least one simulated fluoroscopic image. The display is capable of showing the at least one corresponding image.

Abstract: The invention is disclosed to a control apparatus of catheter feeder. It comprises two rotatable mechanisms and a transmittal device that can propel the guidewire into continuous motion comprising moving forward, moving backward, moving clockwise, and moving counter-clockwise. The invention comprises of a square frame and three gears that are meshed together and are referred to the first, second, and third gear, respectively. At the front of the third gear are the first and second sets of the idle wheels that can hold the guidewire tightly. The invention employs the mechanical gears to control movement of the guidewire.