Abstract: A manufacturing method for a LED is disclosed. The method includes: providing a substrate with an upper surface; preparing a plurality of LEDs on the upper surface; wherein the upper surface is divided into a plurality of zones, the plurality of LEDs composes a plurality of LED groups, and each of the LED group is disposed in one of the plurality of zones; preparing a testing circuit to electrically connecting the plurality of LEDs in one of the plurality of LED groups; testing the plurality of LEDs in the one of the plurality of LED groups by the testing circuit to obtain photoelectrical characteristics of the plurality of LEDs in the one of the plurality of LED groups; and presenting the photoelectric characteristics in an image.

Abstract: A manufacturing method for an LED includes: providing a substrate having an upper surface divided into a plurality of zones; a LED group formed on each of the zones and wherein: a plurality of the LED groups includes a first LED group; and the LEDs of the first LED group include a defective LED; forming a testing circuit on the substrate to electrically connect the LEDs; testing the first LED group by the testing circuit; recording a position of the defective LED; providing a carrier; and performing one of the following steps by the position of the defective LED: removing the defective LED from the substrate and then transferring the other LEDs in the first LED group to the carrier; transferring the other LEDs other than the defective LED in the first LED group to the carrier; or transferring the LEDs to the carrier and repairing it on the carrier.

Abstract: A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.

Abstract: A manufacturing method for an LED includes: providing a substrate having an upper surface divided into a plurality of zones; a LED group formed on each of the zones and wherein: a plurality of the LED groups includes a first LED group; and the LEDs of the first LED group include a defective LED; forming a testing circuit on the substrate to electrically connect the LEDs; testing the first LED group by the testing circuit; recording a position of the defective LED; providing a carrier; and performing one of the following steps by the position of the defective LED: removing the defective LED from the substrate and then transferring the other LEDs in the first LED group to the carrier; transferring the other LEDs other than the defective LED in the first LED group to the carrier; or transferring the LEDs to the carrier and repairing it on the carrier.

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.

Abstract: A susceptor is provided. The susceptor comprises: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring, wherein the outer ring comprises multiple sub-elements separated from each other and detachably connected to the base part; wherein the inner ring and the outer ring separate the holders from one another, and the inner ring comprises multiple first extensions each protruding outwardly toward the outer ring, and each sub-element comprises a second extension extending inwardly toward the inner ring.

Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.

Abstract: A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring; wherein the inner ring and the outer ring separate the holders from one another. A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; a cover comprising a first surface facing the base part, and a second surface opposite to the first surface; a first positioning structure; a second positioning structure formed in the first surface; and a third positioning structure formed in the base part, wherein the cover connects to the base part by associating the first positioning structure with the second positioning structure and the third positioning structure.

Abstract: An LED manufacturing method includes steps of: providing a substrate including a first surface; forming a first portion of a first semiconductor layer on the first surface in a first atmosphere including a first carrier gas; and forming a second portion of the first semiconductor layer on the first portion in a second atmosphere including a second carrier gas; wherein a plurality of first cavities is formed on a surface of the first portion during forming the first portion; and wherein the plurality of first cavities is transformed to a plurality of second cavities during forming the second portion, and one of the second cavities includes a first inclined surface and a second inclined surface above the first inclined surface.

Abstract: An LED manufacturing method includes steps of: providing a substrate including a first surface; forming a first portion of a first semiconductor layer on the first surface in a first atmosphere including a first carrier gas; and forming a second portion of the first semiconductor layer on the first portion in a second atmosphere including a second carrier gas; wherein a plurality of first cavities is formed on a surface of the first portion during forming the first portion; and wherein the plurality of first cavities is transformed to a plurality of second cavities during forming the second portion, and one of the second cavities includes a first inclined surface and a second inclined surface above the first inclined surface.

Abstract: A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring; wherein the inner ring and the outer ring separate the holders from one another. A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; a cover comprising a first surface facing the base part, and a second surface opposite to the first surface; a first positioning structure; a second positioning structure formed in the first surface; and a third positioning structure formed in the base part, wherein the cover connects to the base part by associating the first positioning structure with the second positioning structure and the third positioning structure.

Abstract: A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 ?m; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.

Abstract: A light-emitting device includes: a light-emitting stack having an upper surface having a first surface roughness less than 0.2 nm; and an as-cut wafer comprising an irregularly uneven surface facing the light-emitting stack and having a second surface roughness greater than 0.5 ?m.

Abstract: A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a light-emitting layer on the first semiconductor layer; and a second semiconductor layer having a rough surface formed on the light-emitting layer, wherein the rough surface comprises a plurality of cavities randomly distributed on the rough surface, and one of the plurality of cavities has a substantially hexagonal shape viewed from top and a curved sidewall viewed from cross-section.