Patents by Inventor Chi-Lun Lu

Chi-Lun Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11378894
    Abstract: The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: July 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shang-Chieh Chien, Jeng-Horng Chen, Jui-Ching Wu, Chia-Chen Chen, Hung-Chang Hsieh, Chi-Lun Lu, Chia-Hao Yu, Shih-Ming Chang, Anthony Yen
  • Publication number: 20220026796
    Abstract: In a method of de-mounting a pellicle from a photo mask, the photo mask with the pellicle is placed on a pellicle holder. The pellicle is attached to the photo mask by a plurality of micro structures. The plurality of micro structures are detached from the photo mask by applying a force or energy to the plurality of micro structures before or without applying a pulling force to separate the pellicle from the photo mask. The pellicle is de-mounted from the photo mask. In one or more of the foregoing and following embodiments, the plurality of micro structures are made of an elastomer.
    Type: Application
    Filed: January 29, 2021
    Publication date: January 27, 2022
    Inventors: Wen-Yao Wei, Chi-Lun Lu, Hsin-Chang Lee
  • Patent number: 11079669
    Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: August 3, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Patent number: 11003069
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: May 11, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Publication number: 20200264503
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Publication number: 20200150523
    Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Application
    Filed: December 27, 2019
    Publication date: May 14, 2020
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Patent number: 10642148
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: May 5, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Publication number: 20200064747
    Abstract: The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 27, 2020
    Inventors: Shang-Chieh Chien, Jeng-Horng Chen, Jui-Ching Wu, Chia-Chen Chen, Hung-Chang Hsieh, Chi-Lun Lu, Chia-Hao Yu, Shih-Ming Chang, Anthony Yen
  • Patent number: 10520805
    Abstract: An extreme ultraviolet (EUV) mask having a pellicle disposed thereover is received. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Patent number: 10459353
    Abstract: The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: October 29, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Chieh Chien, Jeng-Horng Chen, Jui-Ching Wu, Chia-Chen Chen, Hung-Chang Hsieh, Chi-Lun Lu, Chia-Hao Yu, Shih-Ming Chang, Anthony Yen
  • Publication number: 20180373138
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Application
    Filed: August 27, 2018
    Publication date: December 27, 2018
    Inventors: CHIA-HAO YU, CHI-LUN LU, CHIH-TSUNG SHIH, CHING-WEI SHEN, JENG-HORNG CHEN
  • Patent number: 10156784
    Abstract: A method includes directing an acoustically agitated fluid stream at a first surface of a substrate to cause the substrate to vibrate mechanically thereby dislodging contaminant particles on the substrate. The first surface of the substrate is opposite a second surface of the substrate. The second surface of the substrate includes a pattern. An amplitude of the acoustically agitated fluid stream is configured to produce an acoustic response along an entirety of the second surface.
    Type: Grant
    Filed: February 5, 2018
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
  • Patent number: 10067418
    Abstract: A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.
    Type: Grant
    Filed: May 12, 2014
    Date of Patent: September 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Hao Chang, Chi-Lun Lu, Shang-Chieh Chien, Ming-Chin Chien, Jui-Ching Wu, Jeng-Horng Chen, Chieh-Jen Cheng, Chia-Chen Chen
  • Patent number: 10061191
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: August 28, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Publication number: 20180157168
    Abstract: A method includes directing an acoustically agitated fluid stream at a first surface of a substrate to cause the substrate to vibrate mechanically thereby dislodging contaminant particles on the substrate. The first surface of the substrate is opposite a second surface of the substrate. The second surface of the substrate includes a pattern. An amplitude of the acoustically agitated fluid stream is configured to produce an acoustic response along an entirety of the second surface.
    Type: Application
    Filed: February 5, 2018
    Publication date: June 7, 2018
    Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
  • Patent number: 9889477
    Abstract: A cleaning and inspection system includes a cleaning chamber and retaining structure disposed within the cleaning chamber and configured to secure an article to be cleaned within the cleaning chamber. The cleaning and inspection system also includes a gas distributor disposed within the cleaning chamber and configured to distribute a turbulent flow of gas into the cleaning chamber that facilitates removal of foreign particles from a surface of the article. Further, the system includes a particle collection surface positioned to collect foreign particles removed from the surface of the article.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: February 13, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Lun Lu, Sheng-Chi Chin
  • Patent number: 9885952
    Abstract: A system includes a bracket that is configured to support a photomask and is located at a first side of the photomask; an acoustic energy generator configured to generate acoustic energy, wherein the acoustic energy includes mechanical vibrations of a megasonic frequency and wavelength; and a fluid dispenser coupled to the acoustic energy generator such that the acoustic energy generated by the acoustic energy generator is received by the fluid dispenser to generate an acoustically agitated fluid stream directed at a second side of the photomask, wherein the first side of the photomask is opposite a second side of the photomask, and wherein the first side includes a pattern.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: February 6, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Wei Shen, Chi-Lun Lu, Kuan-Wen Lin
  • Publication number: 20180031962
    Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.
    Type: Application
    Filed: July 29, 2016
    Publication date: February 1, 2018
    Inventors: Tzu-Ting Chou, Chung-Hsuan Liu, Kuan-Wen Lin, Chi-Lun Lu, Ting-Hao Hsu, Sheng-Chi Chin
  • Publication number: 20170351169
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Application
    Filed: June 1, 2016
    Publication date: December 7, 2017
    Inventors: CHIA-HAO YU, CHI-LUN LU, CHIH-TSUNG SHIH, CHING-WEI SHEN, JENG-HORNG CHEN
  • Patent number: 9740094
    Abstract: A method of cleaning a photomask is disclosed. The method includes mixing a first chemical solution with a second chemical solution; and discharging the mixed chemical solution through an outlet of a nozzle to a surface of the photomask on which includes a ruthenium (Ru) layer, wherein the first chemical solution is configured to dislodge contaminant particles from the surface of the photomask and the second chemical solution is configured to provide an electron to the first chemical solution.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: August 22, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Wen Lin, Chi-Lun Lu, Ching-Wei Shen, Shu-Hsien Wu