Abstract: A fabricating method for a light emitting diode, includes: providing a bonding substrate; providing an epitaxial structure having an epitaxial substrate and an epitaxial layer, in which the epitaxial layer has a first surface and a second surface opposite to each other, and the epitaxial substrate and the epitaxial layer are combined at the first surface; forming at least one gas discharge channel in the periphery of each single die structure on the epitaxial layer; applying an adhesive on the second surface of the epitaxial layer and the bonding substrate; vaporizing volatile organic gases in the adhesive, and bonding the epitaxial structure and the bonding substrate; removing the epitaxial substrate to expose the first surface of the epitaxial layer; forming electrodes on the exposed first surface of the epitaxial layer; and forming a plurality of light emitting diode dies through cutting along the periphery of each single die structure.

Abstract: A light-emitting diode (LED) and fabricating method thereof. The method includes: providing a first substrate and forming an epitaxial portion on the first substrate; forming at least one reflection layer on the epitaxial portion; forming a metal barrier portion on the reflection layer; etching the epitaxial portion and the barrier portion by a first etching process, so as to form a plurality of epitaxial layers and a plurality of metal barrier layers, an etch channel is formed between adjacent epitaxial layers, and each metal barrier layer enwraps a corresponding reflection layer and covers all of a surface of a corresponding epitaxial layer; forming a first bonding layer on the metal barrier layer; and forming a second substrate on the first bonding layer and removing the first substrate.

Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.

Abstract: The invention relates to a nucleating agent for polyethylene terephthalate and injection molding method thereof. The nucleating agent comprises a SiO2 core grafted with bis(2-hydroxyethyl) terephthalate, which accelerates the crystallization of polyethylene terephthalate for injection molding.

Abstract: The invention relates to a nucleating agent for polyethylene terephthalate and injection molding method thereof. The nucleating agent comprises a SiO2 core grafted with bis(2-hydroxyethyl) terephthalate, which accelerates the crystallization of polyethylene terephthalate for injection molding.

Abstract: The invention relates to a nucleating agent for polyethylene terephthalate and injection molding method thereof. The nucleating agent comprises a SiO2 core grafted with bis(2-hydroxyethyl)terephthalate, which accelerates the crystallization of polyethylene terephthalate for injection molding.