Patents by Inventor Chi-Ming Wu

Chi-Ming Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6591996
    Abstract: A framework includes a support rail, at least one bracing element, and at least one shelf. The support rail is provided with a slide slot. The bracing element has a fastening portion and a retaining portion. The fastening portion is used to fasten the shelf. The retaining portion is formed of a slide block and a connection portion located between the slide block and the fastening portion. The slide block is slidably received in the slide slot of the support rail, whereas the connection portion juts out of the slide slot of the support rail.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: July 15, 2003
    Assignee: Luck Money International Co., Ltd.
    Inventor: Chi-Ming Wu
  • Publication number: 20030026742
    Abstract: A thermocouple protection tube is designed such that it is capable of adjusting the length of thermocouple inside reactor after assembly. The design includes an outer casing, an inner casing and a means for fixing the relative position of the outer casing and the inner casing. The inner casing is positioned relative to, and within the outer casing. The fixing means temporarily fixes the relative position of inner casing and outer casing. The disclosed design permits the adjustment of the thermocouple length inside thermocouple protection tube according to the relative thickness the refractory lining inside reactor.
    Type: Application
    Filed: July 15, 2002
    Publication date: February 6, 2003
    Inventors: Chi-Ming Wu, Hong-Hai Dong
  • Patent number: 6063709
    Abstract: A process for etching back SOG during planarization is described. A mix of CHF.sub.3 and CF.sub.4 in an argon carrier gas is used, with the latter having a flow rate of about 175 SCCM. An RF discharge is initiated for about 10 seconds during which time etching occurs. The system is then cleared of all reactive gases by a brief pumpdown to base pressure. In a key feature of the invention, argon alone is now admitted to the reaction chamber at a greater than normal flow rate of about 273 SCCM. This high flow rate is maintained for about 40 seconds (including about 10 seconds to reach an equilibrium pressure of about 225 mtorr) following which the system is pumped out again and the process is terminated. If this procedure is followed, no polymeric residue is generated at the surface of any exposed titanium nitride.
    Type: Grant
    Filed: September 8, 1998
    Date of Patent: May 16, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Kang-Min Kuo, Wen-Hsiang Tang, Su-Ying Su, Chi-Ming Wu