Abstract: The invention relates to SCUBE molecules and generally to gene expression in vascular endothelial cells. The invention specifically relates to the discovery of a novel gene family containing the genes and proteins referred to herein as SCUBE1, SCUBE2 and SCUBE3 which can be expressed in endothelial cells. SCUBE proteins may be involved in the development of cardiovascular disease, hemostasis, thrombosis, inflammatory disease, bone metabolism disorders, urinary bladder disorders and breast disorders.

Abstract: A memory structure including a semiconductor substrate, an insulator layer formed on the semiconductor substrate and a gate layer formed on the insulator layer is disclosed. The insulator layer includes a first nanocrystal implanted region proximate to the gate layer and a second nanocrystal implanted region proximate to the semiconductor substrate, wherein the first nanocrystal implanted region has an average nanocrystal concentration which is higher than an average nanocrystal concentration of the second nanocrystal implanted region.

Abstract: A two-terminal memory device based on semiconductor (such as Si or Ge) or metal (such as Al or Au) nanocrystals and/or nanoparticles is described wherein each device has a substrate, a dielectric layer (such as SiO2 or organic dielectric materials) nanocrystals and/or nanoparticles distributed throughout the dielectric layer, and a metal (or poly-crystalline Si, or conductive organic materials) gate electrode. The memory states of the device are distinguished by charging and discharging the nanocrystals and/or nanoparticles. This two-terminal memory device is much simpler than the conventional four-terminal MOSFET-based memory device in terms of device structure and fabrication process. In addition, it is flexible if the memory devices are fabricated on flexible substrate with organic materials.