Abstract: A substrate cleaning apparatus includes a holder, a brush, a moving element, a driving element and a pressure sensor. The holder is used for disposing a substrate thereon. The moving element is connected to the brush. The driving element is connected to the moving element for proving a lateral pushing power to the moving element such that the moving element and the brush jointly move. The pressure sensor is disposed close to the moving element for sensing the lateral pushing power when the moving element moves to contact with the pressure sensor along a lateral direction, in which the brush moves to laterally push the substrate after the lateral pushing power is sensed to reach a first threshold value by the pressure sensor such that the brush is abutted on the substrate when the brush cleans the substrate.

Abstract: The present invention provides a method of forming a metal gate structure. A substrate and a dielectric layer with a trench are provided. Next, a work function metal (WFM) layer is formed in the trench, following by performing an oxidation process under a vacuum condition to oxidize a part of the WFM layer to form an oxidized WFM layer. Thereafter, a conductive layer is formed on the oxidized WFM layer to complete fill the trench.

Abstract: A wafer supporting device of a sputter apparatus includes a pedestal positioned in a sputtering chamber and used to load a wafer for sputtering, a deposition ring having a recess positioned on a peripheral portion of the pedestal, and a cover ring positioned on the pedestal and the deposition ring. The cover ring has a gate corresponding to the recess.

Abstract: A wafer supporting device of a sputter apparatus includes a pedestal positioned in a sputtering chamber and used to load a wafer for sputtering, a deposition ring having a recess positioned on a peripheral portion of the pedestal, and a cover ring positioned on the pedestal and the deposition ring. The cover ring has a gate corresponding to the recess.

Abstract: A chemical-mechanical polishing apparatus comprising at least a polishing platen, a polishing pad, a slurry supplying piping, a polishing pad conditioner, a chemical reagent supplying piping and a splitting piping is provided. The polishing platen has a plurality of slurry outlets disposed thereon and the polishing pad is disposed on the polishing platen. The slurry supplying piping is connected to the bottom of the polishing platen for delivering slurry to the surface of the polishing pad through the slurry outlets. The polishing pad conditioner is disposed over the polishing pad. The chemical reagent supplying piping is connected to the polishing pad conditioner for supplying the chemical reagent to the polishing conditioner. The splitting piping is connected between the slurry supplying piping and the chemical reagent supplying piping for providing chemical reagent to the surface of the polishing pad through the slurry supplying piping and the slurry outlets.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.

Abstract: A chemical-mechanical polishing apparatus comprising at least a polishing platen, a polishing pad, a slurry supplying piping, a polishing pad conditioner, a chemical reagent supplying piping and a splitting piping is provided. The polishing platen has a plurality of slurry outlets disposed thereon and the polishing pad is disposed on the polishing platen. The slurry supplying piping is connected to the bottom of the polishing platen for delivering slurry to the surface of the polishing pad through the slurry outlets. The polishing pad conditioner is disposed over the polishing pad. The chemical reagent supplying piping is connected to the polishing pad conditioner for supplying the chemical reagent to the polishing conditioner. The splitting piping is connected between the slurry supplying piping and the chemical reagent supplying piping for providing chemical reagent to the surface of the polishing pad through the slurry supplying piping and the slurry outlets.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.

Abstract: A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.

Abstract: A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.