Patents by Inventor Chi-Ray Tsai

Chi-Ray Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10323332
    Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: June 18, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ling Lin, Yen-Liang Lu, Chi-Mao Hsu, Chin-Fu Lin, Chun-Hung Chen, Tsun-Min Cheng, Chi-Ray Tsai
  • Publication number: 20160319450
    Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
    Type: Application
    Filed: July 11, 2016
    Publication date: November 3, 2016
    Inventors: Chun-Ling Lin, Yen-Liang Lu, Chi-Mao Hsu, Chin-Fu Lin, Chun-Hung Chen, Tsun-Min Cheng, Chi-Ray Tsai
  • Patent number: 9416459
    Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: August 16, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ling Lin, Yen-Liang Lu, Chi-Mao Hsu, Chin-Fu Lin, Chun-Hung Chen, Tsun-Min Cheng, Chi-Ray Tsai