Abstract: The present invention discloses a solar cell which can enhance the absorption of the short-wavelength range radiation ?<400 nm of the sun and re-radiate in the wavelength range ?=500˜780 nm to enhance the solar cell's capability in absorbing more long-wavelength radiation and form separate electron-hole pairs so as to increase the output power of the solar cell assembly. Furthermore, the present invention also provides a transparent light conversion film for solar cells.

Abstract: A high-brightness yellow-orange yellow phosphor for use in warm white LED (light emitting diode), the high-brightness yellow-orange yellow phosphor comprises a substrate based on a rare-earth garnet and cerium for activating said substrate. The high-brightness yellow-orange yellow phosphor has the substances of Li+1, Mg+2 and N?3 contained therein so that the overall stoichiometric equation of the substrate is: ?(Ln)3Al5?xLi(x+y)Mg(x+y)O12?3yN3y and, the high-brightness yellow-orange yellow phosphor radiates in a visible orange yellow band at ?=538˜569 nm when activated by a shortwave light from an InGaN semiconductor heterostructure.

Abstract: The present invention discloses a warm-white-light emitting diode has the substrate of indium gallium nitride (InGaN) heterojunction containing a large amount of quantum wells and having a light conversion polymer layer, characterized by that the light conversion polymer layer is uniform in concentration, the light-emitting surface and edges of the indium gallium nitride heterojunction are covered with a thermosetting polymer, and the light conversion polymer layer contains some fluorescent powders, which are formed as at least two particle layers in the light conversion polymer layer to ensure the light transmitted reaching 20% of the first-order blue light and 70˜80% of the second-order orange-yellow light from the indium gallium nitride heterojunction. The present invention also discloses a fluorescent powder.

Abstract: A lutetium-based phosphor having the chemical formula: xLu3Al5O12.yGd3Al5O12:CePrEuTb, and being capable of radiating reddish orange-red spectrum when activated by a shortwave light emitted by an InGaN light-emitting diode. The invention also discloses a warm white LED using the lutetium-based phosphor that produces orange-red light having the peak wavelength ?max>560 nm, half width>125 nm and color rendering index Ra?75 when activated by the LED radiation ?=420˜500 nm.

Abstract: A photovoltaic cell is disclosed to include a monocrystalline silicon wafer, and a transparent light conversion powder which is made in the form of a polymer layer with a transparent phosphor powder filled therein and kept in contact with the outer surface of the monocrystalline silicon wafer to enhance the absorption of the short-wavelength radiation ultraviolet ?<480 nm of the sun and to re-radiate in the wavelength range ?=500˜980 nm, wherein the phosphor powder is formulated as MeIIO.xB2O3:EuCePrTbLi, in which MeII=(Mg+2,Ca+2,Sr+2,Ba+2), 0.1<x<10, preferably in the range of 0.5<x<2. Furthermore, the invention also provides a transparent light conversion powder for photovoltaic cells.

Abstract: A blue-green-red three-band phosphor for multilayer agricultural plastic film for converting near ultraviolet light in photosynthetic active radiation is disclosed. The substrate of the phosphor is prepared from the group IIA element SiO44?, having a total stoichiometric equation (?Me+2O)2?(SiO2)?, in which ?=1, 2, 3, ?Me+2=Ba+2 and/or Sr+2 and/or Ca+2 and/or Mg+2, having an orthorhombic crystal architecture, and generating a three-band spectrum when activated by d-f element selected from the group of Eu+2, Mn+2 and Sm+2. The maximum wavelength of the three-band spectrum is ?1=440˜460 nm, ?2=515˜535 nm and ?3=626˜640 nm. The maximum value and halfwave width of every spectrum are determined subject to the concentration of the activator and the phosphor synthesis technology. The three-band phosphor is prepared through a solid synthesis method in the form of high dispersed ultrafine powder having the average grain size of d?0.8 ?m.

Abstract: The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a specific wavelength and a light conversion layer so as to generate white light. Further, the present invention also discloses a light conversion layer and its fluorine oxygen garnet phosphor powder.

Abstract: An inorganic powder uses a UV solid light source applied for the UV LEDs, in which an inorganic powder is based on the inorganic powder of n-silicate group II elements, and its ingredients have valence 2 ions, such as Eu+2, Sm+2, Yb+2 and Dy+2, valence 3 ions Ce+3, Tb+3 and/or Eu+3. The chemical formula of the components is Me+21-xLn+32-ySi2O8:TR+2x:TR+3y, and x=0.0-0.2, y=0.0-0.1. A main structure thereof is a hexagonal crystal structure. When the indium gallium nitride and gallium nitride based allomorphous semiconductor short wave UV light is used under conditions of excitement, the multiple band white light can be obtained.

Abstract: A phosphor providing orange-yellow radiation is prepared from a cerium activated rare-earth garnet substrate that contains Li (lithium), Si (silicon), N (nitrogen) and F (fluorine) atoms, obtaining the overall stoichiometric equation of (?Ln)3Al5-x-yLiy/3Mgx/2Si(x/2+2y/3)Fq/2O12-qNq/2. When the activating wavelength is 440˜475 nm, the orange sub-energy band becomes 542˜590 nm, and the radiation quatum ouput q>0.9, showing a cubic crystal garnet structure. The phosphor has color coordinate ?(x+y)?0.89, and color purity ??0.89. The invention also provides a warm white LED that has light intensity J?300 cd, half open angle 2??60°, luminous efficiency 65???100 lm/W, and color temperature within 2800?T?5500K.

Abstract: The present invention relates to a red light phosphor, which is based on sulfide and activating agent containing rare earth strontium or hafnium. It is characterized by that the aforementioned materials are a fluorine-sulfur oxide containing lanthanum-yttrium-zirconium and/or hafnium with its stoichiometric formula as (La1-x-y-zYxAyMez+4O)2S1(F?1)2z, and activating agent based on A=(TR+3=? Eu, Sm, Gd, Tb)+(TR+4?Pr+4), in which Me+4=Zr+4 and/or Hf+4. Compared with standard materials, the luminous intensity of the phosphor according to the present invention is increased to 1.6-2.4 times. Further, the red light phosphor according to the present invention has a mean diameter of d50?0.6 ?m. The present invention also discloses a multilayer photo-transforming film, in which the three-layer agro-film is filled with phosphor. The agro-film is based on polythene and its derivatives and added with photostabilizer.

Abstract: A fluorescent powder using YAG (yttrium aluminum garnet) as the substrate and cerium as the excitant, and having added thereto Tb (terbium) ions, Ga (gallium) ions, Yb (ytterbium) ions and Lu (lutetium) ions. The YAG (yttrium aluminum garnet) has the chemical formula of (Y1-x-y-z-p-qGdxTbyYbzLupCeq)3Al5O12. The invention also provides an organic film layer using the fluorescent powder, and a LED using the organic film layer.

Abstract: A silicon-based photovoltaic cell is disclosed having a red light conversion layer that absorbs ultraviolet rays, blue-purple or yellow-green light of the Sun's solar radiation and converts the absorption into a red, dark red and near infrared subband radiation. The maximum value of the solar radiation absorbed by the red light conversion layer is ?=470˜490 nm, and the maximum value of the photoluminescent spectrum of the red light conversion layer is within the photosensitive spectral zone of said single-crystal silicon substrate ?=700˜900 nm, i.e., in conformity with the optimal sensitivity area of silicon-based solar cells. The red light conversion layer has filled therein an ethyl acetoacetate or polycarbonate-based light-transmissive polymer that has evenly distributed therein a phosphor composed of ?-Al2O3—Ti2O3, having a quantum efficiency of 90%.

Abstract: The present invention relates to a high heat dissipation electric circuit board, comprises: an electric conductive wiring layer serving to be installed with at least one electronic unit, on which a wiring is formed for being connected to the electronic unit; an insulation layer, installed on one side of the electric conductive wiring layer; and a graphite heat conduction layer, installed on one side of the insulation layer for uniformly dissipating heat generated by the electronic unit. Moreover, the present invention also provides a manufacturing method of high heat dissipation electric circuit board.

Abstract: A silicate phosphor prepared from Mg2Me+20.5Ln3Si2.5O12-2yN?3yF?1y, in which Me+2=Ca, Sr, Ba, Ln=Sc, Lu, Er, Ho, excited by one single ion or an ion pair of d, f-elements such as Ak+n=Cu+1, Ce+3, Eu+2, Ag+1, Mn+2. The phosphor has a cubic garnet architecture prepared by solid phase synthesis, and radiates at green, green-yellow, yellow-orange spectrum regions. When mixed with (Y,Gd,Ce)3Al5O12 substrate-based phosphor, the compound mixture has warm white radiation and color temperature T<4000K with high luminous intensity and high luminescence efficiency. The invention also provides a warm white semiconductor using the silicate phosphor.

Abstract: The invention relates to a halide phosphor powder for warm-white light emitting diode, which is a kind of low-color-temperature phosphor powder of halide nitride based on garnet of rare earth oxides, uses cerium as activating agent and is characterized in that chloride (Cl?1) and nitrogen ion (N?3) are added to the composition of the phosphor powder and its stoichiometric relationship of the composition is (?Ln+3)3Al2[(Al(O1-2pClpNp)4]3, wherein ?Ln is ?Ln=Y and/or Gd and/or Tb and/or Lu and/or Dy and/or Pr and/or Ce. In addition, the invention also discloses a use of a warm-white light emitting diode of the said phosphor powder with a weight ratio of 8 to 75%. The light emitting diode has a warm-red color temperature T?3000 K when it has a power of 1 watt.

Abstract: A trichromatic field-emission display is disclosed to include a cathode plate, three cathode electroluminescent phosphor screens and an anode plate, the anode plate having a transparent oxide thin film bonded to the photo gate electrode thereof, electron sources emitted by the photo gate electrode of the cathode plate striking the cathode electroluminescent phosphor screens to cause change of the electric field in the gap between the cathode plate and the anode plate. The cathode electroluminescent phosphor screens are made of an excitable rare earth element, assuring high stability and uniformity of luminous brightness when excited by an electron beam.

Abstract: The present invention discloses a fluorine-oxide phosphor powder, based on the cubic garnet fluorine oxide and yttrium aluminum oxide and using cerium as activator, is characterized in that the luminescent material is added with fluorine with a chemical equivalence formula as Y3-xCexAl2(AlO4-?FO)?Fi)?)3, wherein FO is fluorine ion in the lattice point of oxygen crystal and Fi is fluorine ion between the lattice points. The phosphor powder has cerium ions Ce+3 as activator and can be excited by quantum radiation or high-energy particles with energy between E?2.8 eV and E?1 MeV to have a peak wavelength between ?=538˜548 nm and half bandwidth of ??0.5=109-114 nm. Moreover, the present invention also discloses an In—Ga—N heterojunction used in spectrum converter, semiconductor light source, scintillating phosphor powder, scintillation sensor, and FED (Field Emission Display) monitor.

Abstract: A phosphor providing orange-yellow radiation is prepared from a cerium activated rear-earth garnet substrate that contains Li (lithium), Si (silicon), N (nitrogen) and F (fluorine) atoms, obtaining the overall stoichiometric equation of (?Ln)3Al5-x-yLiy/3Mgx/2Si(x/2+2y/3)Fq/2O12-qNq/2. When the activating wavelength is 440˜475 nm, the orange sub-energy band becomes 542˜590 nm, and the radiation quantum output q>0.9, showing a cubic crystal garnet structure. The phosphor has color coordinate ?(x+y)?0.89, and color purity ??0.89. The invention also provides a warm white LED that has light intensity J?300 cd, half open angle 2??60°, luminous efficiency 65 ???100 lm/W, and color temperature within 2800?T?5500K.

Abstract: An even luminance, high heat dissipation efficiency, high power LED lamp structure includes an aluminum extrusion body, an aluminum die cast front casing and an aluminum die cast rear casing respectively provided at two distal ends of the aluminum extrusion body, a PC board mounted inside the aluminum extrusion body, LEDs mounted in different LED mounting faces of the PC board at different angles, an inner cover plate decorating the inside of the aluminum die cast front casing, a transparent outer cover covering the bottom side of the aluminum extrusion body and sealed with a water seal, and a retaining device fastened to the aluminum extrusion body to secure the transparent outer cover in place.

Abstract: The present invention discloses a packaging structure for light-emitting diode, which comprises a grain to provide electroluminescence; a solder paste layer disposed on the bottom and perimeter of the grain to connect the grain with at least one support; and a heat-conducting layer disposed at the bottom of the grain to work as a heat-dissipating path for the grain, so that the aforementioned structure may significantly reduce the packaging thermal resistance of light-emitting diode. Further, the present invention also discloses a packaging method for light-emitting diode, which is capable of greatly reducing the packaging thermal resistance of light-emitting diode.