Abstract: A white light emitting diode device (white LED device) is provided. The white LED device includes an LED chip and a phosphor. A first light beam with wavelength between about 380 nm and about 450 nm is emitted from the LED chip. The phosphor is distributed in the range of the first light beam, wherein the phosphor is excited by the first light beam to emit a second light beam with wavelength between about 560 nm and about 580 nm. The first light beam and the second light beam are mixed to produce white light. The white LED device provides excellent light emitting efficiency and color rendering property, and has low manufacturing cost.

Abstract: A lens for chromatic aberration compensation is provided. The lens includes a lens body and a plurality of color filter films. The lens body has a light incident plane, a light exit plane and an optical axis. The light incident plane and/or the light exit plane comprises a plurality of discrete area, wherein the area comprises, for example but not limited to, a plurality of annular areas, fan-shaped areas, or polygon areas. The color filter films are disposed over the areas of the lens body respectively, and comprise red color filter films, green color filter films or blue color filter films. Accordingly, the lens for chromatic aberration compensation of the invention can eliminate the aberration effectively.

Abstract: A lens for chromatic aberration compensation is provided. The lens includes a lens body and a plurality of color filter films. The lens body has a light incident plane, a light exit plane and an optical axis. The light incident plane and/or the light exit plane comprises a plurality of discrete area, wherein the area comprises, for example but not limited to, a plurality of annular areas, fan-shaped areas, or polygon areas. The color filter films are disposed over the areas of the lens body respectively, and comprise red color filter films, green color filter films or blue color filter films. Accordingly, the lens for chromatic aberration compensation of the invention can eliminate the aberration effectively.

Abstract: A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100.degree. C.

Abstract: The invention relates to the design of multiwavelength LED devices having multiple-lobe optical spectrums and laser diode devices with multiple designated wavelengths wherein the devices are formed by stacking various active layers of selected semiconductor materials whereby each layer is assigned to be active at a different wavelength. The independent layers are active at different wavelengths based on both their material composition and Quantum Well geometry. Independent control of current to each layer is allowed which in effect controls the spectral intensity distribution and the spectral widths. The step of allowing independent control of the current is achieved by considering the probabilities of carrier capturing, recombining carriers at various active layers and minimizing the current through all the barriers and cladding layers and optimizing the current through each active layer by controlling the individual thicknesses.

Abstract: A semiconductor laser structure having the same advantages as a channeled substrate planar laser, but without the difficulties of fabrication associated with this structure. The structure includes a substrate, a planar first cladding layer, a planar active layer, and a second cladding layer in which a mesa region is formed. A blocking layer is formed over the second cladding layer and electrical contact is made through the blocking layer in the region of the mesa. The blocking layer functions to confine current flow in the mesa region and to provide index-guiding of light in the mesa region. Because of its simple geometry, the structure can be conveniently formed using a desirable fabrication process, such as metalorganic chemical vapor deposition (MOCVD). In one disclosed embodiment of the invention, the mesa is broadened to include at least one intermediate ledge on each side of a central pedestal.

Abstract: A w-shaped diffused stripe GaAs/AlGaAs laser and a method for making the e. A double heterostructure layered structure includes a p-type GaAs active layer in contact with a p-type AlGaAs current blocking layer. These layers are sandwiched between two N-type AlGaAs confinement layers. A p-type zinc diffused stripe region having a w-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer through a portion of the lower confinement layer and through portions of the various intervening layers. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc into the device from a source through a pair of parallel slots in a diffusion mask. The zinc diffused into the device is further driven-in by heating the device in the absence of the zinc source.

Abstract: A zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser device and a method of making the same. A double heterostructure layered structure including a p-type GaAs active layer sandwiched between two n-type AlGaAs confinement layers is formed on a substrate. A p-type zinc diffused stripe region having a U-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer down to at least the surface of intersection between the active layer and the lower confinement layer. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc from a source through a slot in a diffusion mask. The zinc diffused into the device is driven in by heating the device in the absence of the zinc source.