Abstract: A conductive line structure includes: first and second offset sets of long pillars that are substantially coaxial on an intra-set basis; a third set of offset short pillars, the short pillars being: overlapping of long pillars in the first and second sets; and organized into groups of first quantities of the short pillars; each of the groups being overlapping of and electrically coupled between a pair of one of the long pillars in the first set and a one of the long pillars in the second set such that, in each of the groups, each short pillar being overlapping of and electrically coupled between the pair; and each long pillar in each of the first and second sets being overlapped by a second quantity of short pillars in the third set and being electrically coupled to same; and the first quantity being less than the second quantity.

Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.

Abstract: A portable electronic device including a first body, a second body, and a light module is provided. The second body is pivotally connected to the first body. The light module is adjacent to the second body and is disposed on the first body. The light module includes a frame, a light guide plate, a light source, a patterned light guide film, and a light-transmitting cover plate. The frame is disposed on the first body. The light guide plate is disposed in the frame and has a light incident surface and a light emitting surface. The light source is disposed in the frame as corresponding to the light incident surface of the light guide plate. The patterned light guide film is detachably disposed on the light guide plate and covers the light emitting surface. The light-transmitting cover plate is detachably disposed on the frame and covers the patterned light guide film.

Abstract: In a method of manufacturing a semiconductor device, first and second gate structures are formed. The first (second) gate structure includes a first (second) gate electrode layer and first (second) sidewall spacers disposed on both side faces of the first (second) gate electrode layer. The first and second gate electrode layers are recessed and the first and second sidewall spacers are recessed, thereby forming a first space and a second space over the recessed first and second gate electrode layers and first and second sidewall spacers, respectively. First and second protective layers are formed in the first and second spaces, respectively. First and second etch-stop layers are formed on the first and second protective layers, respectively. A first depth of the first space above the first sidewall spacers is different from a second depth of the first space above the first gate electrode layer.

Abstract: A light emitting diode includes an epitaxial semiconductor layer including an N-type nitride layer, a v-pit emergence layer, a strain adjustment layer, an active layer, and a P-type nitride layer that are sequentially stacked in that order. The active layer has a plurality of barrier layers and a plurality of well layers that are alternatively stacked. The epitaxial semiconductor layer includes a v-pit. The v-pit has an opening that is located at a topmost one of the barrier layers of the active layer, and has a width that is greater than 260 nm. The v-pit emergence layer is doped with carbon (C) at a doping concentration that is no less than 7×1016/cm3. A light emitting device includes the light emitting diode.

Abstract: The present invention includes a chip, a plastic film layer, and an electroplated layer. A front side and a back side of the chip each comprises a signal contact. The plastic film layer covers the chip and includes a first via and a second via. The first via is formed adjacent to the chip, and the second via is formed extending to the signal contact of the front side. A conductive layer is added in the first and the second via. The conductive layer in the second via is electrically connected to the signal contact of the front side. Through the electroplated layer, the signal contact on the back side is electrically connected to the conductive layer in the first via. The conductive layer protrudes from the plastic film layer as conductive terminals. The present invention achieves electrical connection of the chip without using expensive die bonding materials.

Abstract: A method for handling radio link monitoring (RLM) includes: receiving downlink (DL) data from a network device; performing a first measurement according to the DL data, to generate a first measurement result of the DL data; comparing the first measurement result and a first threshold, to determine a first indication; comparing the first measurement result and a second threshold, to determine a second indication; and determining whether a radio link failure (RLF) occurs according to at least one of the first indication and the second indication.

Abstract: A common path interferometric probe for identifying a sample includes an optical fiber, a light guide component, a GRIN lens component and a beamsplitter surface. The optical fiber outputs a light beam. The optical fiber, the light guide component and the GRIN lens component are sequentially connected. The reflection surface is disposed on the light guide component and the beamsplitter surface disposed in the GRIN lens component. When the light beam output from the optical fiber travels through the light guide component and reaches the beamsplitter surface, a part of the light beam is reflected by the beamsplitter surface to form a reference beam, and another part of the light beam passes through the beamsplitter surface to form a sample beam. The reference beam travels back to the optical fiber by undergoing reflections at the reflection surface and beamsplitter surface.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The configuration specifies a bundle size N. Modulation symbols in N consecutive PRBs are precoded with a same precoder. The UE determines whether a precoding condition is true. The precoding condition is that modulation symbols in a first set of resources and a second set of resources are precoded with a same precoder. Each set of the first set of resources and the second set of resources contains N PRBs. When the precoding condition is met: the UE measures reference signals in the second set of resources; the UE determines a channel condition of the first set of resources in consideration of the measurements of the reference signals in the second set of resources.

Abstract: An OCT common-path probe for identifying a sample includes an optical fiber, a first GRIN lens and a second GRIN lens. The optical fiber outputs a light beam from its end facet. The first GRIN lens is cemented to the second GRIN lens, and located between the optical fiber and the second GRIN lens. A joint surface between the first GRIN lens and the second GRIN lens reflects a part of the light beam to form a reference beam, and allows another part of the light beam to pass through to form a sample beam. The reference beam is focused on the end facet by the first GRIN lens. The sample beam is focused on the sample by the second GRIN lens, reflected by the sample to travel through the second GRIN lens, the joint surface and the first GRIN lens sequentially, and thereby focused on the end facet.

Abstract: An intraocular pressure detecting device includes the following elements. A force-applying element is adapted to apply a force to a target surface on a cornea of an eyeball in a direction, so that the target surface is deformed. A force-sensing element, coupled to the force-applying element, is adapted to sense the force applied by the force-applying element in the direction. A displacement-sensing element, coupled to the force-applying element, is adapted to sense a displacement of the force-applying element in the direction. A processing element is electrically connected to the force-sensing element and the displacement-sensing element to obtain a relationship curve between applied force and displacement. In particular, the processing element analyzes the relationship curve to obtain a characteristic critical point, and obtains an intraocular pressure value of the eyeball according to the applied force corresponding to the characteristic critical point.

Abstract: Example camera and hub arrangements are presented herein. An example device includes an Ethernet connector configured to provide power and data, a camera port configured to provide power and data to a camera module, and an audio port configured to provide power and data to at least one audio input/output module. The device also includes a processor configured to determine one or more camera parameters for the camera module attached to the camera port, such as a type of a camera module attached to the camera port. The device can change operation mode based on camera parameters and audio parameters associated with connected camera modules and audio modules. Different modules can be connected to the device and located remotely from the device.

Abstract: A package device preventing solder overflow provides a space or structure to limit the location of the solder when dispensing the solder. The package device includes a die, an anti-overflow layer, a first pin, a second pin, and a package body. The die has an electrode pad. The anti-overflow layer is disposed on a top surface of the electrode pad and has an opening to expose the top surface of the electrode pad. The first pin is connected to the die. The second pin is soldered to the electrode pad of the die through the opening of the anti-overflow layer. The package body covers the die.

Abstract: A microscopic observation method configured to observe a specimen in a specimen carrier that includes the following steps: placing the specimen carrier at an observation point; obtaining a length of the specimen carrier along a movement direction, a thickness of the specimen carrier along an observation direction of a microscope objective, an observation angle of the microscope objective, and a relative distance between a lateral surface of the specimen carrier and the microscope objective along the movement direction; and adjusting an incident angle of a light beam emitted from a dark-field illumination towards the specimen carrier according to a calculation result of the length, the thickness, the observation angle, and the relative distance.

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises a well layer and a barrier layer, wherein the barrier layer has a band gap; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer comprises a band gap which is greater than the band gap of the barrier layer; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; a confinement layer between the first aluminum-containing layer and the active region; and a second aluminum-containing layer between the second semiconductor structure and the first electron blocking layer; wherein both the first alumi

Abstract: An OCT scanning probe includes a tubular housing, at least one electrode, an optical fiber scanner and an auxiliary localization component. The electrode is disposed on an outer surface of the tubular housing. The optical fiber scanner is disposed in the tubular housing and includes an optical fiber and an optical element. The optical element is disposed on an emitting end of the optical fiber and at corresponding position to a light transmittable portion of the tubular housing. The auxiliary localization component is disposed on the tubular housing, and overlaps part of the light transmittable portion. A light beam emitted from the optical fiber scanner passes through the light transmittable portion to obtain a tomographic image. An interaction of the light beam with the auxiliary localization component causes a characteristic in the tomographic image, with the characteristic corresponding to the auxiliary localization component.

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the fi

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-conta

Abstract: An optical probe includes a cylindrical lens adapted to receive and transmit incident light. A light-emitting surface of the cylindrical lens is a curved end surface having a concentric ring-shaped diffractive microstructure. A working position of the optical probe is a position where a diffraction order is 1 when the incident light having a design wavelength between a first wavelength and a second wavelength passes through the diffractive microstructure. When passing through the cylindrical lens, the incident light having the first wavelength produces a diffraction effect with the diffractive microstructure and is converged at a first wavelength working position approximately the same as the working position of the optical probe with the diffraction order of 1. After being refracted by the curved end surface, the incident light having the second wavelength is converged at a second wavelength working position approximately the same as the working position of the optical probe.