Abstract: A control circuit of SRAM and an operating method thereof are provided. The control circuit includes a memory array, a word-line driver, a boost circuit and a voltage level detecting circuit. The memory array includes a plurality of memory cells. Each memory cell includes a plurality of transistors. The word-line driver is to activate the word-line of the memory array for cell storage data access. The boost circuit is to provide the higher voltage source for the word-line driver and a first operating voltage for boosting the first operating voltage to a second operating voltage. The voltage level detecting circuit is detecting if the first operation voltage needs to be boosted with boost-operation and a detecting-trigger signal and controls the operating of the boost circuit based on the detecting-trigger signal, the first operating voltage and a predetermined voltage.

Abstract: A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.

Abstract: A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.

Abstract: A control circuit of SRAM and an operating method thereof are provided. The control circuit includes a memory array, a word-line driver, a boost circuit and a voltage level detecting circuit. The memory array includes a plurality of memory cells. Each memory cell includes a plurality of transistors. The word-line driver is to activate the word-line of the memory array for cell storage data access. The boost circuit is to provide the higher voltage source for the word-line driver and a first operating voltage for boosting the first operating voltage to a second operating voltage. The voltage level detecting circuit is detecting if the first operation voltage needed boosted with boost-operation and a detecting-trigger signal and controls the operating of the boost circuit based on the detecting-trigger signal, the first operating voltage and a predetermined voltage.

Abstract: A controller for use in a remote control toy airplane is disclosed to include a booster circuit for boosting the voltage of the battery of the remote control toy airplane to the desired voltage level for the working of the motor of the remote control toy airplane, and an electronic speed-change control circuit for controlling output voltage and current from the battery to the motor of the remote control toy airplane subject to the nature of the wireless control signal received from a wireless receiver.