Patents by Inventor Chi-Shiung Hsi

Chi-Shiung Hsi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180065852
    Abstract: A method for preparing a spherical aluminum nitride granule includes (A) providing an aluminum oxide powder and a resin, followed by dissolving the aluminum oxide powder and the resin in a solvent to form a mixed slurry; (B) performing spray drying on the mixed slurry to form a spherical granule; (C) performing carbonization on the spherical granule in an inert atmosphere to form a carbonized spherical granule; (D) performing carbothermic reduction on the carbonized spherical granule in a nitrogen atmosphere to form a spherical aluminum nitride granule; (E) performing a densification sintering thermal treatment continuously on the spherical aluminum nitride granule in a nitrogen atmosphere; and (F) performing decarbonization on the densified spherical aluminum nitride granule in a nitrogen atmosphere to form densified spherical aluminum nitride sintered particles of tens of micrometers. Accordingly, the manufacturing process is simple and energy-saving.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 8, 2018
    Inventors: KUAN-TING LAI, CHI-SHIUNG HSI, MIN-YU YANG
  • Patent number: 9722115
    Abstract: The disclosure provides a solar cell encapsulating module including a first substrate, a first encapsulating material layer, a metal particle layer, multiple solar cells, a routing layer, a second encapsulating material layer and a second substrate. The first substrate is formed from a light transmittance material. The first encapsulating material layer is formed on the first substrate. The metal particle layer is formed on the first encapsulating material layer. The solar cells are disposed on the metal particle layer. The routing layer is disposed on the solar cells for being electrically connected to the plurality of solar cells. The second encapsulating material layer is formed on the routing layer. The second substrate is disposed on the second encapsulating material layer. The routing layer is disposed on only one side of the solar cells.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: August 1, 2017
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsin-Hsin Hsieh, Jang-Hsing Hsieh, Chi-Shiung Hsi
  • Publication number: 20160257568
    Abstract: A method of preparing aluminum nitride powder through atmosphere controlled carbon-thermal reduction. It relates to a chemical dilution method to wrap the carbon material evenly around the surface of ?-aluminum oxide (gamma phase-aluminum oxide). The method includes the following processes of: material mixing, carbonization, carbon-thermal reduction, and de-carbonization. Wherein, ?-aluminum oxide and phenolic resin are mixed to form a solution, and after the solution is baked and dried into powder, it is carbonized under nitridation atmosphere in high temperature. Then, carbon-thermal reduction is performed in a temperature of 1400° C.˜1700° C. Finally, de-carbonized is performed in air. In the process of carbon-thermal reduction, ammonia gas and hydrogen gas are added to regulate the reacting atmosphere. Also, urea is added to increase the nitridation reaction of aluminum.
    Type: Application
    Filed: December 8, 2015
    Publication date: September 8, 2016
    Inventors: Kuan-Ting Lai, Chi-Shiung Hsi, Min-Yu Yang
  • Publication number: 20150162634
    Abstract: The preparation method of electrolytes provided by the present invention involves applications of a first solid oxide powder and a second solid oxide powder, both of which are prepared by using a sol-gel process and a calcination process. Each of the first and second solid oxide powders is a Perovskite-type oxide. After the first and second solid oxide powders are readily mixed, they are compressed into a pellet and then sintered to prepare the afore-mentioned electrolytes for SOFC. It is found in the present invention that by mixing and compressing different solid oxide powders, the solid oxide powder having smaller particle size can fill into the gaps of the other solid oxide powder. After the pellet is sintered, the density of the product is significantly improved.
    Type: Application
    Filed: February 13, 2015
    Publication date: June 11, 2015
    Inventors: Sheng-Wei LEE, Kan-Rong LEE, Jing-Chie LIN, Chuan LI, Chung-Jen TSENG, Jeng-Kuei CHANG, Shian-Ching JANG, I-Ming HUNG, Chi-Shiung HSI, Sheng-Long LEE, Yen-Jiun CHIANG, Yu-Shuo HUANG
  • Publication number: 20150037694
    Abstract: The preparation method of electrolytes provided by the present invention includes a first solid oxide powder and a second solid oxide powder, both of which are prepared by using a sol-gel process and a calcination process. Each of the first and second solid oxide powders is a Perovskite-type oxide. After the first and second solid oxide powders are readily mixed, they are compressed into a pellet and then sintered to prepare the afore-mentioned electrolytes for SOFC. It is found in the present invention that by mixing and compressing different solid oxide powders, the solid oxide powder having smaller particle size can fill into the gaps of the other solid oxide powder. After the pellet is sintered, the density of the product is significantly improved.
    Type: Application
    Filed: September 20, 2013
    Publication date: February 5, 2015
    Applicant: NATIONAL CENTRAL UNIVERSITY
    Inventors: SHENG-WEI LEE, KAN-RONG LEE, JING-CHIE LIN, CHUAN LI, CHUNG-JEN TSENG, JENG-KUEI CHANG, SHIANG-CHING JANG, I-MING HUNG, CHI-SHIUNG HSI, SHENG-LONG LEE, YEN-CHUN CHIANG
  • Publication number: 20120048355
    Abstract: The invention provides a semiconductor device module package structure and a series connection method thereof. The semiconductor device module package structure includes a wafer having a plurality through holes. A doped layer covers a top surface of the first electrode, and inner sidewalls extending to a bottom surface of the first electrode. At least two first electrodes are disposed adjacent to each other and on opposite sides of the through holes. A second electrode covers the doped layer and the through holes. At least two insulating layer patterns overlap with the first and second electrodes. A second electrode conductive pattern is disposed on the second electrode. The second electrode conductive pattern is disposed between the insulating layer patterns, electrically connecting to the second electrode.
    Type: Application
    Filed: December 30, 2010
    Publication date: March 1, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsin-Hsin Hsieh, Chi-Shiung Hsi, Tao-Chih Chang