Patents by Inventor Chi Su
Chi Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984350Abstract: A method includes forming a transistor over a substrate; forming a front-side interconnection structure over the transistor; after forming the front-side interconnection structure, removing the substrate; after removing the substrate, forming a backside via to be electrically connected to the transistor; depositing a dielectric layer to cover the backside via; forming an opening in the dielectric layer to expose the backside via; forming a spacer structure on a sidewall of the opening; after forming a spacer structure, forming a conductive feature in the opening to be electrically connected to the backside via; and after forming the conductive feature, forming an air gap in the spacer structure.Type: GrantFiled: December 14, 2022Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
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Patent number: 11978773Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.Type: GrantFiled: March 25, 2021Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Huan-Chieh Su, Chun-Yuan Chen, Li-Zhen Yu, Shih-Chuan Chiu, Cheng-Chi Chuang, Chih-Hao Wang
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Publication number: 20240139669Abstract: A method for preparing hydrogen from ammonia by using pressure swing adsorption (PSA) is provided. The method for preparing hydrogen from ammonia, of the present invention, comprises the steps of: generating hydrogen and nitrogen from ammonia gas through a high-temperature reaction by using a catalyst; performing purification by selectively adsorbing unreacted ammonia gas from a gas containing unreacted ammonia and low-purity hydrogen and nitrogen, which are supplied through the high-temperature reaction and cooled; and performing purification by separating high-purity hydrogen from the gas consisting of low-purity hydrogen and nitrogen, wherein purification is carried out by using a carbon molecular sieve (CMS) adsorbent so as to desorb the unreacted ammonia gas through PSA.Type: ApplicationFiled: November 10, 2022Publication date: May 2, 2024Applicants: POSCO CO., LTD, RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGYInventors: Chi-Kyu Ahn, Chang-Houn Rhee, Gook-Hee Kim, Man-Su Lee, Hai-Woong Park, Beom-Sik Kim, Seong-Min Son
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Publication number: 20240145562Abstract: The present disclosure describes a method to form a backside power rail (BPR) semiconductor device with an air gap. The method includes forming a fin structure on a first side of a substrate, forming a source/drain (S/D) region adjacent to the fin structure, forming a first S/D contact structure on the first side of the substrate and in contact with the S/D region, and forming a capping structure on the first S/D contact structure. The method further includes removing a portion of the first S/D contact structure through the capping structure to form an air gap and forming a second S/D contact structure on a second side of the substrate and in contact with the S/D region. The second side is opposite to the first side.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Zhen YU, Lin-Yu HUANG, Cheng-Chi CHUANG, Chih-Hao WANG, Huan-Chieh SU
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Publication number: 20240136226Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
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Publication number: 20240125771Abstract: The present invention relates to a reaction platform, which comprises: a machine body with a bottom plate for placing non-porous substrates; and a coater module configured on the top of the machine body and capable of maintaining a preset of a predetermined height for moving along the surface of non-porous substrate, wherein the coater module has one or more slits, and a target liquid can be directly injected or sucking in from the outside of the coater module through the slit, and spreading the target liquid onto a surface of the non-porous substrate while moving along the non-porous substrate; wherein the surface of the non-porous substrate has a target to be coated. The reaction platform of the present invention can not only save time, labor and cost, but also have accurate and reproducible experimental results, showing better results than traditional methods.Type: ApplicationFiled: July 25, 2023Publication date: April 18, 2024Inventors: An-Bang Wang, Shih-Yu Chen, Tung-Hung Su, Chia-Chi Chu, Chia-Chien Yen, Yu-Wei Chiang
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Patent number: 11961800Abstract: A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.Type: GrantFiled: July 21, 2022Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, An-Jhih Su, Chi-Hsi Wu, Wen-Chih Chiou, Tsang-Jiuh Wu, Der-Chyang Yeh, Ming Shih Yeh
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Patent number: 11955515Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.Type: GrantFiled: July 28, 2022Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Chuan Chiu, Chia-Hao Chang, Cheng-Chi Chuang, Chih-Hao Wang, Huan-Chieh Su, Chun-Yuan Chen, Li-Zhen Yu, Yu-Ming Lin
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Patent number: 11955552Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.Type: GrantFiled: November 14, 2022Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Zhen Yu, Huan-Chieh Su, Shih-Chuan Chiu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
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Patent number: 11946529Abstract: A sliding table assembly includes a sliding seat unit slidably mounted to a base unit. Two auxiliary sliding seats are slidably mounted to the base unit and disposed on two sides of the sliding seat unit. A connection member is connected between the auxiliary sliding seats. Two roller sets are respectively mounted to the auxiliary sliding seats. Each roller set has rollers to roll on the base unit. A driving screw rod is coupled to the sliding seat unit and embraced by the auxiliary seats. When the sliding unit is moved by the driving screw rod, it pushes the auxiliary sliding seats to slide together therewith.Type: GrantFiled: May 19, 2022Date of Patent: April 2, 2024Assignee: Toyo Automation Co., Ltd.Inventors: Kun-Cheng Tseng, Ming-Chi Su, En-Tzu Hsu
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Patent number: 11942750Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.Type: GrantFiled: November 23, 2020Date of Patent: March 26, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Chi Lee, Hsin-Chia Su, Shih-Ting Lin, Yu-Cheng Song, Fu-Shun Ho, Chih-Chun Chen
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Publication number: 20240096996Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Huan-Chieh Su, Chun-Yuan Chen, Li-Zhen Yu, Lo-Heng Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11935794Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.Type: GrantFiled: December 12, 2022Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang, Zhi-Chang Lin, Li-Zhen Yu
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Patent number: 11925454Abstract: A respiratory function testing system includes an air transforming device, a sound reception device and an operation device. The air transforming device is configured to collect exhaled and/or inhaled air for a predetermined period and generate a wide frequency range sound signal according to the collected respired air. The wide frequency range sound signal at least contains an ultrasonic signal. The sound reception device is configured to receive and record the wide frequency range sound signal as an audio file. The operation device is in communication with the sound reception device and is configured to receive and compute the audio file to generate a respiratory function parameter. Besides, the recorded wide frequency range sound signal may be converted into a spectrogram for further applications, and the computation of the audio file can be replaced by analyzing the spectrogram. A respiratory function testing method corresponding to the respiratory function testing system is also provided.Type: GrantFiled: October 5, 2020Date of Patent: March 12, 2024Inventors: Chia-Chi Su, Hsiao-Pao Yen, Pei-Ling Hsu, Chia-Hung Chen
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Patent number: 11923408Abstract: A semiconductor structure includes one or more channel layers; a gate structure engaging the one or more channel layers; a first source/drain feature connected to a first side of the one or more channel layers and adjacent to the gate structure; a first dielectric cap disposed over the first source/drain feature, wherein a bottom surface of the first dielectric cap is below a top surface of the gate structure; a first via disposed under and electrically connected to the first source/drain feature; and a power rail disposed under and electrically connected to the first via.Type: GrantFiled: July 29, 2022Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
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Patent number: 11923352Abstract: A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.Type: GrantFiled: January 28, 2022Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsin-Li Cheng, Shu-Hui Su, Yu-Chi Chang, Yingkit Felix Tsui, Shih-Fen Huang
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Publication number: 20240072021Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.Type: ApplicationFiled: October 26, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Yu Chen, An-Jhih Su, Chi-Hsi Wu, Der-Chyang Yeh, Li-Hsien Huang, Po-Hao Tsai, Ming-Shih Yeh, Ta-Wei Liu
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Patent number: 11915972Abstract: Semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a first source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line, the first conductive line defining a first side boundary of the air spacer.Type: GrantFiled: July 15, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Li-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
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Patent number: 11915976Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.Type: GrantFiled: June 27, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 11895291Abstract: A method and apparatus of encoding or decoding for a coding system, where bi-directional CU (coding unit) weighting (BCW) is enabled for the coding system to allow using multiple pairs of weights, are disclosed. According to this method, a Merge candidate list is generated for the current block, where current bi-directional CU weights for a bi-directional predictor of the current block associated with a target Merge candidate in the Merge candidate list are set to a pre-define pair of weights when the target Merge candidate corresponds to a selected Merge candidate. In another method, current bi-directional CU weights for a bi-directional predictor associated with a target Merge candidate in the Merge candidate list are inherited from the target Merge candidate when the target Merge candidate corresponds to a selected Merge candidate.Type: GrantFiled: May 23, 2019Date of Patent: February 6, 2024Assignee: HFI INNOVATION INC.Inventors: Yu-Chi Su, Ching-Yeh Chen, Zhi-Yi Lin, Tzu-Der Chuang