Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: Systems and methods are described for bonding asynchronous transfer mode permanent virtual circuits using a multi-link segmentation and reassembly sublayer. A method includes: transforming a plurality of streams of asynchronous transfer mode cells into a stream of bonded asynchronous transfer mode cells, the plurality of streams of asynchronous transfer mode cells provided by a first plurality of permanent virtual circuits; demultiplexing the stream of bonded asynchronous transfer mode cells into a plurality of streams of inverse multiplexed bonded asynchronous transfer mode cells; and transmitting the plurality of streams of inverse multiplexed bonded asynchronous transfer mode cells to a remote location via a second plurality of permanent virtual circuits. The transmitted plurality of streams of inverse multiplexed bonded asynchronous transfer mode cells can be multiplexed and transformed into a plurality of multiplexed streams of asynchronous transfer mode cells after transmitting.