Abstract: The present disclosure discloses a method for recycling all types of lithium batteries. First, the lithium battery waste is acid-leached to obtain a solution containing most of metal ions. After filtering, the solution is separated from the remaining solids, and then the obtained solution is subjected to separate precipitation many times. After separately adjusting the pH value of the solution many times, adding precipitants with a high selectivity ratio, and matching with filtration and separation reaction, all ions in the lithium battery waste are sequentially precipitated in forms of iron phosphate (FePO4), aluminum hydroxide (Al(OH)3), manganese oxide (MnO2), dicobalt trioxide (cobalt oxide, Co2O3), nickel hydroxide (Ni(OH)2), and lithium carbonate (Li2CO3).

Abstract: A semiconductor device includes a semiconductor substrate, a first active region in the semiconductor substrate, and a second active region in the semiconductor substrate. The semiconductor device further includes a first conductive line over the semiconductor substrate electrically connected to the first active region and having a first end face adjacent to the second active region, and the first end face having an image log slope of greater than 15 ?m?1.

Abstract: A semiconductor device includes a semiconductor substrate, a first active region in the semiconductor substrate, and a second active region in the semiconductor substrate. The semiconductor device further includes a first conductive line over the semiconductor substrate electrically connected to the first active region and having a first end face adjacent to the second active region, and the first end face having an image log slope of greater than 15 ?m-1.

Abstract: A pattern on a semiconductor substrate is formed using two separate etching processes. The first etching process removes a portion of an intermediate layer above an active region of the substrate. The second etching process exposes a portion of the active region of the substrate. A semiconductor device formed using the patterning method has a decreased mask error enhancement factor and increased critical dimension uniformity than the prior art.

Abstract: A pattern on a semiconductor substrate is formed using two separate etching processes. The first etching process removes a portion of an intermediate layer above an active region of the substrate. The second etching process exposes a portion of the active region of the substrate. A semiconductor device formed using the patterning method has a decreased mask error enhancement factor and increased critical dimension uniformity than the prior art.

Abstract: An apparatus and method for rotating OSD fonts are disclosed. The OSD rotation device including a central processing unit, font addresses generator, memory, a font ROM, a decoder, a shift register, a output controller and output circuits, a synchronization signal generator, and a display device. In a manner, the OSD fonts corresponding to the OSD font addresses are produced. Next, the OSD fonts is read and delivered to the decoder. Further, the decoder performs a decoding process for the OSD fonts to form a plurality of rotated fonts. The OSD message, including the rotated fonts, is displayed on a display device so that the video display is synchronized with the OSD message.

Abstract: The embedded micro-controller unit includes a serial interface according to the present invention. A program control device connects the embedded micro-controller unit. The serial interface will send a request signal to a micro-processor while renewing program codes. The micro-processor will transfer the power of controlling program memory to the serial interface and then go into idle state or halt state after receiving the request signal. The program control device may directly write new program codes into the program memory through the serial interface.

Abstract: A first information (I) is displayed on a display screen of a display device (5). A vertical and horizontal position of a field of the first information (I) on the display screen is determined by a vertical start pulse (V) and by horizontal start pulses (H), both corresponding to or being extracted from the first information (I). The vertical position of a second information (Oi) on the display screen is determined by counting a certain number of the horizontal start pulses (H). To eliminate any remaining jitter, a time difference (Td) is determined between the active edge of the vertical start pulse (V) and that horizontal start pulse (H) which is nearest to the active edge of the vertical start pulse (V). If this time difference (Td) is smaller than a certain safe margin (Ni), the nearest horizontal start pulse (H) is so close to the active edge of the vertical start pulse (V), that an occurrence of vertical jitter is becoming likely.