Abstract: A coated substrate for an electronic device can include a substrate, a basecoat layer on the substrate, and an anti-fingerprint topcoat layer on the basecoat layer. The substrate can include a metal or metal alloy. The basecoat layer can include pigment particles and a first one-part thermally cured polymeric resin. The anti-fingerprint topcoat layer can include a second one-part thermally cured polymeric resin and an anti-fingerprint material. The anti-fingerprint material can include a fluoropolymer, a silane, or a combination thereof. The basecoat layer can be cured before applying the anti-fingerprint topcoat layer on the basecoat layer.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: An auxiliary operation device for a droplet dispenser includes a droplet sensor, an imaging device and a processor. The droplet sensor has a detected area located between a droplet dispenser and a target area, wherein the droplet sensor detects a droplet output from the droplet dispenser, and outputs a corresponding droplet detection signal. The imaging device captures an image of the target area. The processor obtains a dripping time point at which the droplet passes through the detected area according to the droplet detection signal, and determines whether the target area is shielded within a first time range according to the image, so as to evaluate whether the droplet has successfully dropped into the target area. The above-mentioned auxiliary operating device of the droplet dispenser can objectively determine whether the droplets successfully drops into the target area, and improve the accuracy of judgment.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A coated metal alloy substrate with at least one chamfered edge, a process for producing a coating a metal alloy substrate, and an electronic device having a housing comprising a coated metal alloy substrate are described. The coated metal alloy substrate with at least one chamfered edge comprises a hydrophobic anti-fingerprint layer deposited on the metal alloy substrate, a passivation layer deposited on the at least one chamfered edge, and a water based paint layer deposited on the passivation layer.

Abstract: The application discloses examples of a device housing of an electronic device including a magnesium-alloy substrate. The device housing further including a treatment layer applied over the magnesium-alloy substrate and a metallic coating layer applied over the treatment layer to provide a metallic luster. Further, a paint coating layer is disposed over a first portion of the metallic coating layer. Further, a top coating layer is applied over the paint coating layer and a visible second portion of the metallic coating layer.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, a first isolation structure on the SDB structure, a shallow trench isolation (STI) adjacent to the SDB structure, and a second isolation structure on the STI. Preferably, the first isolation structure further includes a cap layer on the SDB structure and a dielectric layer on the cap layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer around the first gate structure; transforming the first gate structure into a first metal gate; removing the first metal gate to form a first recess; and forming a dielectric layer in the first recess.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer around the first gate structure; transforming the first gate structure into a first metal gate; removing the first metal gate to form a first recess; and forming a dielectric layer in the first recess.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, and a metal gate adjacent to the isolation structure. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure dividing the fin-shaped structure into a first portion and a second portion as the SDB structure includes a bottom portion in the fin-shaped structure and a top portion on the bottom portion, a spacer around the top portion, a first epitaxial layer adjacent to one side of the top portion, and a second epitaxial layer adjacent to another side of the top portion.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer around the first gate structure; transforming the first gate structure into a first metal gate; removing the first metal gate to form a first recess; and forming a dielectric layer in the first recess.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, and a metal gate adjacent to the isolation structure. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer around the first gate structure; transforming the first gate structure into a first metal gate; removing the first metal gate to form a first recess; and forming a dielectric layer in the first recess.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure dividing the fin-shaped structure into a first portion and a second portion as the SDB structure includes a bottom portion in the fin-shaped structure and a top portion on the bottom portion, a spacer around the top portion, a first epitaxial layer adjacent to one side of the top portion, and a second epitaxial layer adjacent to another side of the top portion.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer on the first gate structure; removing the first gate structure to form a first recess; and forming a dielectric layer in the first recess.

Abstract: A semiconductor device includes a gate structure on a fin-shaped structure, a single diffusion break (SDB) structure adjacent to the gate structure, a shallow trench isolation (STI) around the fin-shaped structure, and an isolation structure on the STI. Preferably, a top surface of the SDB structure is even with a top surface of the isolation structure, and the SDB structure includes a bottom portion in the fin-shaped structure and a top portion on the bottom portion.