Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: The present disclosure describes a method for the formation of gate-all-around nano-sheet FETs with tunable performance. The method includes disposing a first and a second vertical structure with different widths over a substrate, where the first and the second vertical structures have a top portion comprising a multilayer nano-sheet stack with alternating first and second nano-sheet layers. The method also includes disposing a sacrificial gate structure over the top portion of the first and second vertical structures; depositing an isolation layer over the first and second vertical structures so that the isolation layer surrounds a sidewall of the sacrificial gate structure; etching the sacrificial gate structure to expose each multilayer nano-sheet stack from the first and second vertical structures; removing the second nano-sheet layers from each exposed multilayer nano-sheet stack to form suspended first nano-sheet layers; forming a metal gate structure to surround the suspended first nano-sheet layers.

Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: A control device for driving a motor which includes a rotor and a stator is provided. The control device includes a Hall detector and driving circuit. The Hall detector detects magnetic flux variation when the rotor rotates and generates a first detection signal and a second detection signal. The first and second detection signals represent current rotation location when the rotor rotates. The driving circuit generates a driving signal to drive the stator. The driving circuit turns on or off the driving signal according to a control signal and the relationship between the first and second detection signals.

Abstract: A polypropylene derivative is provided. The polypropylene derivative includes a reactive monomer grafted on polypropylene, with a grafting yield exceeding 5%. A method for preparing the polypropylene derivative is also disclosed. The method includes mixing a reactive monomer, polypropylene and a compatibilizer to prepare a polypropylene derivative grafted with the reactive monomer, with a grafting yield exceeding 5%.

Abstract: A polypropylene derivative is provided. The polypropylene derivative includes a reactive monomer grafted on polypropylene, with a grafting yield exceeding 5%. A method of preparing the polypropylene derivative is also disclosed. The method includes mixing a reactive monomer, polypropylene, and a compatibilizer in a twin screw extruder to prepare a polypropylene derivative with reactive monomers grafted thereon, with a grafting ratio exceeding 5%.