Patents by Inventor Chi-Wei Hu

Chi-Wei Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12156479
    Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.
    Type: Grant
    Filed: November 4, 2021
    Date of Patent: November 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Lin Huang, MingYuan Song, Chien-Min Lee, Shy-Jay Lin, Chi-Feng Pai, Chen-Yu Hu, Chao-Chung Huang, Kuan-Hao Chen, Chia-Chin Tsai, Yu-Fang Chiu, Cheng-Wei Peng
  • Publication number: 20240389472
    Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.
    Type: Application
    Filed: July 29, 2024
    Publication date: November 21, 2024
    Inventors: Yen-Lin Huang, MingYuan Song, Chien-Min Lee, Shy-Jay Lin, Chi-Feng Pai, Chen-Yu Hu, Chao-Chung Huang, Kuan-Hao Chen, Chia-Chin Tsai, Yu-Fang Chiu, Cheng-Wei Peng
  • Patent number: 12063360
    Abstract: A prediction processing system includes a processing circuit and a reference data buffer. The processing circuit performs a first inter prediction operation upon a first prediction block in a frame to generate a first inter prediction result, and further performs a second inter prediction operation upon a second prediction block during a first period. The reference data buffer buffers a reference data derived from the first inter prediction result. The processing circuit further fetches the reference data from the reference data buffer, and performs a non-inter prediction operation according to at least the reference data during a second period, wherein the second period overlaps the first period.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: August 13, 2024
    Assignee: MEDIATEK INC.
    Inventors: Kai-Chun Lin, Chi-Hung Chen, Meng-Jye Hu, Hsiao-En Chen, Chih-Wen Yang, Chien-Wei Lin
  • Patent number: 11714947
    Abstract: A method of manufacturing an integrated circuit includes adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first and second pair of conductive patterns on the corresponding first and second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and a second set of conductive structures based on the second pair of conductive patterns. A first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. One spacing of a first set of spacings is different from another spacing of the first set of spacings.
    Type: Grant
    Filed: May 20, 2022
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mahantesh Hanchinal, Shu-Yi Ying, Chi Wei Hu, Min-Yuan Tsai
  • Publication number: 20220284165
    Abstract: A method of manufacturing an integrated circuit includes adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first and second pair of conductive patterns on the corresponding first and second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and a second set of conductive structures based on the second pair of conductive patterns. A first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. One spacing of a first set of spacings is different from another spacing of the first set of spacings.
    Type: Application
    Filed: May 20, 2022
    Publication date: September 8, 2022
    Inventors: Mahantesh HANCHINAL, Shu-Yi YING, Chi Wei HU, Min-Yuan TSAI
  • Patent number: 11341308
    Abstract: A method of manufacturing an integrated circuit includes generating a layout of a first and a second cell, adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first pair of conductive patterns on the first set of routing tracks, placing a second pair of conductive patterns on the second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and forming a second set of conductive structures based on the second pair of conductive patterns. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: May 24, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mahantesh Hanchinal, Shu-Yi Ying, Chi Wei Hu, Min-Yuan Tsai
  • Publication number: 20210173996
    Abstract: A method of manufacturing an integrated circuit includes generating a layout of a first and a second cell, adjusting a first spacing between an adjacent pair of routing tracks in a first set of routing tracks to be equal to a second spacing, adjusting a third spacing between an adjacent pair of routing tracks in a second set of routing tracks to be equal to a fourth spacing, placing a first pair of conductive patterns on the first set of routing tracks, placing a second pair of conductive patterns on the second set of routing tracks, forming a first set of conductive structures based on the first pair of conductive patterns, and forming a second set of conductive structures based on the second pair of conductive patterns. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch.
    Type: Application
    Filed: February 18, 2021
    Publication date: June 10, 2021
    Inventors: Mahantesh HANCHINAL, Shu-Yi YING, Chi Wei HU, Min-Yuan TSAI
  • Patent number: 10936780
    Abstract: A method of manufacturing an integrated circuit includes identifying a first cell of a layout, placing a first pair of conductive patterns on a first set of routing tracks, placing a second pair of conductive patterns on a second set of routing tracks, and forming, by a first mask, a first set of conductive structures based on the first pair or second pair of conductive patterns. The first cell abuts a second cell. The first cell has a first set of routing tracks. The second cell has a second set of routing tracks. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. A top and bottom boundary of the first cell overlaps a pair of the first set of routing tracks. A top and bottom boundary of the second cell overlaps a pair of the second set of routing tracks.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: March 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mahantesh Hanchinal, Chi Wei Hu, Min-Yuan Tsai, Shu-Yi Ying
  • Publication number: 20190392108
    Abstract: A method of manufacturing an integrated circuit includes identifying a first cell of a layout, placing a first pair of conductive patterns on a first set of routing tracks, placing a second pair of conductive patterns on a second set of routing tracks, and forming, by a first mask, a first set of conductive structures based on the first pair or second pair of conductive patterns. The first cell abuts a second cell. The first cell has a first set of routing tracks. The second cell has a second set of routing tracks. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. A top and bottom boundary of the first cell overlaps a pair of the first set of routing tracks. A top and bottom boundary of the second cell overlaps a pair of the second set of routing tracks.
    Type: Application
    Filed: August 30, 2019
    Publication date: December 26, 2019
    Inventors: Mahantesh HANCHINAL, Chi Wei HU, Min-Yuan TSAI, Shu-Yi YING
  • Patent number: 10402529
    Abstract: A method of designing a layout includes identifying a cell having a cell height being a non-integral multiple of a minimum pitch, generating, using a processor, possibilities of an ordered arrangement of a plurality of virtual grid lines parallel to the top boundary and the bottom boundary, and placing at least two conductive patterns on the plurality of virtual grid lines. The cell height is defined by a top boundary and a bottom boundary, and the minimum pitch is based on a manufacturing process. The plurality of virtual grid lines are separated from each other by a plurality of spacings, and the top boundary overlaps a first virtual grid line of the plurality of virtual grid lines and the bottom boundary overlaps a second virtual grid line of the plurality of virtual grid lines. At least one spacing is different from another spacing of the plurality of spacings.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: September 3, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mahantesh Hanchinal, Chi Wei Hu, Min-Yuan Tsai, Shu-Yi Ying
  • Patent number: 10268791
    Abstract: A method is disclosed that includes the operation below. Vertices in a conflict graph are sorted into a first clique and a second clique, in which the conflict graph corresponds to a layout of a circuit. A first vertex of the vertices is merged with a second vertex of the vertices, to generate a reduced graph, in which the first clique excludes the second vertex, and the second clique excludes the first vertex. A first color pattern of a plurality of color patterns is assigned to a first pattern, corresponding to the first vertex, and a second pattern, corresponding to the second vertex, in the layout according to the reduced graph.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Hung Lin, Chung-Hsing Wang, Chin-Chou Liu, Chi-Wei Hu
  • Publication number: 20180144082
    Abstract: A method of designing a layout includes identifying a cell having a cell height being a non-integral multiple of a minimum pitch, generating, using a processor, possibilities of an ordered arrangement of a plurality of virtual grid lines parallel to the top boundary and the bottom boundary, and placing at least two conductive patterns on the plurality of virtual grid lines. The cell height is defined by a top boundary and a bottom boundary, and the minimum pitch is based on a manufacturing process. The plurality of virtual grid lines are separated from each other by a plurality of spacings, and the top boundary overlaps a first virtual grid line of the plurality of virtual grid lines and the bottom boundary overlaps a second virtual grid line of the plurality of virtual grid lines. At least one spacing is different from another spacing of the plurality of spacings.
    Type: Application
    Filed: November 18, 2016
    Publication date: May 24, 2018
    Inventors: Mahantesh HANCHINAL, Chi Wei HU, Min-Yuan TSAI, Shu-Yi YING
  • Publication number: 20170169154
    Abstract: A method is disclosed that includes the operation below. Vertices in a conflict graph are sorted into a first clique and a second clique, in which the conflict graph corresponds to a layout of a circuit. A first vertex of the vertices is merged with a second vertex of the vertices, to generate a reduced graph, in which the first clique excludes the second vertex, and the second clique excludes the first vertex. A first color pattern of a plurality of color patterns is assigned to a first pattern, corresponding to the first vertex, and a second pattern, corresponding to the second vertex, in the layout according to the reduced graph.
    Type: Application
    Filed: December 11, 2015
    Publication date: June 15, 2017
    Inventors: Yen-Hung LIN, Chung-Hsing WANG, Chin-Chou LIU, Chi-Wei HU
  • Patent number: 9659133
    Abstract: A method is performed at least in part by at least one processor. In the method, a plurality of circuit elements are placed in a layout for a semiconductor device, the plurality of circuit elements having a plurality of pins. A layer assignment is generated to assign a plurality of interconnections to corresponding conductive layers of the semiconductor device, the plurality of interconnections connecting corresponding pairs of pins among the plurality of pins. The plurality of interconnections is routed in the layout in accordance with the layer assignment.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: May 23, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Hung Lin, Chi Wei Hu, Yuan-Te Hou, Chung-Hsing Wang, Chin-Chou Liu
  • Patent number: 9436793
    Abstract: Among other things, one or more systems and techniques for tier based layer modification, such as promotion or demotion, for a design layout are provided herein. A metal scheme describes one or more metal layers of the design layout, which are grouped into a set of tiers based upon resistivity similarity between the metal layers. Wire segments of the design layout are evaluated for promotion to tiers providing improved performance, for demotion to tiers providing decreased performance so that relatively faster routing resources are freed up for other wire segments, or for modification such as widening of wire segments. Via count penalties corresponding to timing delays of additional vias used to reassign wire segments are taken into account during promotion. Routing resource gains associated with reassigning wire segments are taken into account during demotion. In this way, wire segments of the design layout are promoted, demoted, or modified.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: September 6, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yen-Hung Lin, Chi Wei Hu, Yuan-Te Hou, Chung-Hsing Wang, Chin-Chou Liu
  • Patent number: 9405880
    Abstract: A method of forming a semiconductor arrangement is provided. The semiconductor arrangement includes an interconnection arrangement comprising a first connection between a driver and a receiver. At least one buffer is disposed along the first connection to reduce delay associated with the interconnection arrangement. However, buffers increase power consumption, and thus a determination is made as to whether a buffer is unnecessary. A buffer is determined to be unnecessary where removal of the buffer does not violate a timing constraint regarding an amount of time a signal takes to go from the driver to the receiver. If a buffer is determined to be unnecessary, the buffer is removed to reduce power consumption.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: August 2, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yen-Hung Lin, Chi Wei Hu, Yuan-Te Hou, Chung-Hsing Wang, Chin-Chou Liu
  • Publication number: 20150331990
    Abstract: A method of forming a semiconductor arrangement is provided. The semiconductor arrangement includes an interconnection arrangement comprising a first connection between a driver and a receiver. At least one buffer is disposed along the first connection to reduce delay associated with the interconnection arrangement. However, buffers increase power consumption, and thus a determination is made as to whether a buffer is unnecessary. A buffer is determined to be unnecessary where removal of the buffer does not violate a timing constraint regarding an amount of time a signal takes to go from the driver to the receiver. If a buffer is determined to be unnecessary, the buffer is removed to reduce power consumption.
    Type: Application
    Filed: May 16, 2014
    Publication date: November 19, 2015
    Inventors: Yen-Hung Lin, Chi Wei Hu, Yuan-Te Hou, Chung-Hsing Wang, Chin-Chou Liu
  • Publication number: 20150213178
    Abstract: Among other things, one or more systems and techniques for tier based layer modification, such as promotion or demotion, for a design layout are provided herein. A metal scheme describes one or more metal layers of the design layout, which are grouped into a set of tiers based upon resistivity similarity between the metal layers. Wire segments of the design layout are evaluated for promotion to tiers providing improved performance, for demotion to tiers providing decreased performance so that relatively faster routing resources are freed up for other wire segments, or for modification such as widening of wire segments. Via count penalties corresponding to timing delays of additional vias used to reassign wire segments are taken into account during promotion. Routing resource gains associated with reassigning wire segments are taken into account during demotion. In this way, wire segments of the design layout are promoted, demoted, or modified.
    Type: Application
    Filed: January 29, 2014
    Publication date: July 30, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yen-Hung Lin, Chi Wei Hu, Yuan-Te Hou, Chung-Hsing Wang, Chin-Chou Liu
  • Publication number: 20150113493
    Abstract: A method is performed at least in part by at least one processor. In the method, a plurality of circuit elements are placed in a layout for a semiconductor device, the plurality of circuit elements having a plurality of pins. A layer assignment is generated to assign a plurality of interconnections to corresponding conductive layers of the semiconductor device, the plurality of interconnections connecting corresponding pairs of pins among the plurality of pins. The plurality of interconnections is routed in the layout in accordance with the layer assignment.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Hung LIN, Chi Wei HU, Yuan-Te HOU, Chung-Hsing WANG, Chin-Chou LIU
  • Patent number: 8739097
    Abstract: A method comprises selecting a region from a layout pattern of an integrated circuit, wherein the region comprises a plurality of functional units, and wherein the functional units are not coupled to each other through a variety of connection components, identifying hot spots in the region using a first threshold and inserting a plurality of decoupling capacitors adjacent to the hot spots.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 27, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Wei Hu, Kuan-Yu Lin, Wan-Chun Chen, Chin-Chou Liu