Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: A method for modulating a threshold voltage of a device. The method includes providing a fin extending from a substrate, where the fin includes a plurality of semiconductor channel layers defining a channel region for a P-type transistor. In some embodiments, the method further includes forming a first gate dielectric layer surrounding at least three sides of each of the plurality of semiconductor channel layers of the P-type transistor. Thereafter, the method further includes forming a P-type metal film surrounding the first gate dielectric layer. In an example, and after forming the P-type metal film, the method further includes annealing the semiconductor device. After the annealing, and in some embodiments, the method includes removing the P-type metal film.

Abstract: An electronic component includes a board, an electronic device, and a stiffening structure is provided. The electronic device is disposed on the board. The stiffening structure is disposed on the board. The stiffening structure includes a ring portion corresponding the edge of the board. The stiffening structure includes a core base and a cladding layer. The cladding layer covers the core base.

Abstract: Disclosed is a device designed for a continuous production of graphene flakes by an electrochemical method. The device consists of an electrochemical unit for generating graphene flakes by an electrochemical exfoliation; a filtration unit for separating the graphene flakes from an electrolyte solution; a guiding path connected to the electrochemical unit and transports the graphene flakes and the electrolyte solution into the filtration unit; a grading collection unit for accepting the separated graphene flakes from the filtration unit and separating the graphene flakes by size. The device can achieve the effect of producing high-quality graphene flakes in mass production electrochemically, continuously and quickly.

Abstract: Disclosed is a method of producing shaped graphene sheets, and the method includes the steps of providing an initial material of an artificial oriented graphite, performing a shaping process of the initial material of the artificial oriented graphite to produce a composite material, and carrying out an electrochemical process of the composite material to obtain the shaped graphene sheets, so as to achieve the mass production of high-quality shaped graphene sheets with a low cost.