Abstract: Apparatus and methods are provided for thermal throttling for UE configured with multi-panel transceiving on FR2. In one novel aspect, the UE prioritizes throttling actions based on signal qualities of each transceiving panel. In one embodiment, the switching to the target panel from the active panel is selected as the highest priority throttling action when the signal quality of the target panel is similar to the active panel. In another embodiment, the UE further determines if the quality of the target panel is sufficient to support mmW transceiving before switching to the target panel. In one embodiment, the UE reduces one or more antennae of an active panel when the signal quality difference between the active panel and the target panel is bigger than a predefined gap threshold.

Abstract: A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.

Abstract: The present invention provides antibody or the antigen-binding portion thereof bind to carbohydrate antigen, such as Globo series antigens (e.g. Globo H, SSEA-4 or SSEA-3). Also disclosed herein are pharmaceutical compositions and methods for the inhibition of cancer cells in a subject in need thereof. The pharmaceutical compositions comprise an antibody or an antigen-binding portion thereof and at least one pharmaceutically acceptable carrier.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion, and the first strip portion and the second strip portion are elongated in a first elongated axis and are spaced apart from each other. The method includes forming a layer over the first overlay grating. The layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion, and the first strip portion and the second strip portion are elongated in a first elongated axis and are spaced apart from each other. The method includes forming a layer over the first overlay grating. The layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.