Patents by Inventor Chi Weon Yoo

Chi Weon Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6545936
    Abstract: The present invention relates to a DRAM structure for reducing row latency for an irregular row access and for improving the effective bandwidth by varying a DRAM cell core structure, specifically, to a pipeline structure of a memory for a fast row cycle, which is different from a structure used in a conventional fast cycle RAM (FCRAM) and is established by modifying a cell core access in the channel structure of a virtual channel memory (VCM) and by introducing a row buffer and a latch to a decoder.
    Type: Grant
    Filed: April 6, 2001
    Date of Patent: April 8, 2003
    Assignee: Korea Advanced Institute of Science & Technology
    Inventors: Hoi Jun Yoo, Chi Weon Yoo