Abstract: A conference data sharing method includes triggering a transmitter coupled to an image signal source, transmitting a triggering signal from the transmitter to a receiver through a first network, generating at least one data signal according to a conference member list after the receiver receives the triggering signal, transmitting the at least one data signal to at least one conference member through a second network, transmitting an image signal from the image signal source to the transmitter after the transmitter is triggered, processing the image signal by the transmitter for transmitting the image signal to the receiver through the first network, and controlling a display device for displaying an image by the receiver according to the image signal.

Abstract: A wireless communications pairing method includes providing a receiver and a first transmitter linked to the receiver, establishing a first link between the first transmitter and a second transmitter, transmitting pairing information from the first transmitter to the second transmitter through the first link, establishing a second link between the second transmitter and the receiver according to the pairing information after the second transmitter receives the pairing information, transmitting an image signal from an image signal source coupled to the second transmitter to the second transmitter after the second transmitter is triggered, processing the image signal by the second transmitter for transmitting the image signal from the second transmitter to the receiver, and controlling a display device for displaying an image by the receiver according to the image signal.

Abstract: A memory device includes a semiconductor substrate, a logic transistor, and a storage transistor. The semiconductor substrate has a logic region and a memory region. The logic transistor is disposed on the logic region, in which the logic transistor comprises a high-k metal gate structure. The storage transistor is disposed on the memory region, in which the storage transistor includes a charge storage structure and a high-k metal gate structure. The charge storage structure is disposed on the memory region. The high-k metal gate structure is disposed on the charge storage structure.

Abstract: A semiconductor device includes a substrate, a FinFET, and an insulating structure. The FinFET includes a fin, a gate electrode, and a gate dielectric layer. The fin is over the substrate. The gate electrode is over the fin. The gate dielectric layer is between the gate electrode and the fin. The insulating structure is over the substrate, adjacent the fin, and has a top surface lower than a top surface of the fin. The top surface of the insulating structure has opposite first and second edge portions and an intermediate portion between the first and second edge portions. The first edge portion of the top surface of the insulating structure is lower than the intermediate portion of the top surface of the insulating structure.

Abstract: The present invention relates to an immunogenic composition against severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), especially to an immunogenic composition having a recombinant SARS-CoV-2 S protein and adjuvant.

Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, a plasma process combining etching and deposition processes is used to form a recess having a rounded corner shape in a cross section along the second direction.

Abstract: A FinFET device structure is provided. The FinFET device structure includes an isolation structure formed over a substrate and a fin structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure, and the first gate structure has a first width in a direction parallel to the fin structure, the second gate structure has a second width in a direction parallel to the fin structure, and the first width is smaller than the second width. The first gate structure includes a first work function layer having a first height. The second gate structure includes a second work function layer having a second height and a gap between the first height and the second height is in a range from about 1 nm to about 6 nm.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack.

Abstract: A non-volatile memory (NVM) cell includes a semiconductor wire including a select gate portion and a control gate portion. The NVM cell includes a select transistor formed with the select gate portion and a control transistor formed with the control gate portion. The select transistor includes a gate dielectric layer disposed around the select gate portion and a select gate electrode disposed on the gate dielectric layer. The control transistor includes a stacked dielectric layer disposed around the control gate portion, a gate dielectric layer disposed on the stacked dielectric layer and a control gate electrode disposed on the gate dielectric layer. The stacked dielectric layer includes a first silicon oxide layer disposed on the control gate portion, a charge trapping layer disposed on the first silicon oxide, and a second silicon oxide layer disposed on the charge trapping layer.

Abstract: Various embodiments of the present application are directed towards a method to integrate NVM devices with a logic or BCD device. In some embodiments, an isolation structure is formed in a semiconductor substrate. The isolation structure demarcates a memory region of the semiconductor substrate, and further demarcates a peripheral region of the semiconductor substrate. The peripheral region may, for example, correspond to BCD device or a logic device. A doped well is formed in the peripheral region. A dielectric seal layer is formed covering the memory and peripheral regions, and further covering the doped well. The dielectric seal layer is removed from the memory region, but not the peripheral region. A memory cell structure is formed on the memory region using a thermal oxidation process. The dielectric seal layer is removed from the peripheral region, and a peripheral device structure including a gate electrode is formed on the peripheral region.

Abstract: A seal arrangement is provided for sealing an exposed edge of a composite laminate part having a fay surface configured to be joined to a structure. The seal arrangement includes a precured edge seal covering the exposed edge and a cover covering the edge seal. A seal bead located within a recess in the fay surface of the part forms a seal between the part and the structure.

Abstract: A method includes obtaining a layout of a circuit pattern implemented on a semiconductor wafer, and identifying one or more polygons in the layout based on a length criteria. One or more measurement gauges are placed on the identified polygons to thereby obtain measured polygons. A scanning electron microscope (SEM) image of the circuit pattern is obtained. The SEM image is aligned with the layout including the measured polygons. A critical dimension of one or more objects in the SEM image is measured. The one or more objects correspond to the one or more polygons. Based on the measured critical dimension, it is determined whether the circuit pattern is acceptable.

Abstract: Cardiac monitor devices are described. An exemplary cardiac monitor device can take the form of an armband that can be worn by a user. The cardiac monitor device can be paired with an electronic device so that the user can access information of his or her heart activity. In one embodiment, the cardiac monitor device can include a body that can be worn at a limb of the user. The body can carry different electronic components. The electronic components can include an electrode configured to come into contact with a location of the limb and configured to measure a first electrical potential at the location. The electronic components can also include an antenna configured to capacitively couple with the body of the user to generate a second electrical potential. The electronic components can further include an amplifier configured to amplify the potential difference.

Abstract: Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: A semiconductor structure can include a high voltage region, a first moat trench isolation structure electrically insulating the high voltage region from low voltage regions of the semiconductor structure, and a second moat trench isolation structure electrically insulating the high voltage region from the low voltage regions of the semiconductor structure. The first moat trench isolation structure can include dielectric sidewall spacers and a conductive fill material portion located between the dielectric sidewall spacers. The second moat trench isolation structure can include only at least one dielectric material, and can include a dielectric moat trench fill structure having a same material composition as the dielectric sidewall spacers and having a lateral thickness that is greater than a lateral thickness of the dielectric sidewall spacers and is less than twice the lateral thickness of the dielectric sidewall spacers.

Abstract: Provided is a method for preparing a tissue section, including treating a tissue specimen with a clearing agent and at least one labeling agent to obtain a cleared and labeled tissue specimen; generating a three-dimensional (3D) image of the cleared and labeled tissue specimen; performing an image slicing procedure on the 3D image to generate a plurality of two-dimensional (2D) images; identifying a target 2D image among the plurality of 2D images to obtain a distance value of D1, which indicates the distance between the target 2D image and a predetermined surface of the 3D image; preparing a hardened tissue specimen from the cleared and labeled tissue specimen; and cutting the hardened tissue specimen near a predetermined site to obtain a tissue section, wherein the distance between the predetermined site and a surface of the hardened tissue specimen corresponding to the predetermined surface of the 3D image is Dl.

Abstract: A method for identifying video signal source is provided. The method includes the following steps. A first identification code is assigned to a first transmitter device by a receiver control unit of a receiver device. A first video data is transmitted by the first transmitter device. The first video data and a first identification image corresponding to the first identification code are combined as a first combined video data by the receiver control unit. The first combined video data is outputted to a display device by the receiver control unit.

Abstract: A video conference system including a first transmitter device and a receiver device is provided. The first transmitter device transmits a first video data. The receiver device includes a receiver control unit configured to assign a first identification code to the first transmitter device. The receiver control unit combines the first video data and a first identification image corresponding to the first identification code as a first combined video data and the receiver control unit outputs the first combined video data to the display device. Through the present invention, the conference participants can quickly identify which presenter is providing the video signal source corresponding to a particular frame on the split screen, and can raise questions to the right person.