Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Abstract: A mobile terminal, including a display screen, a rear cover facing the display screen, a metal frame, and a circuit board; the metal frame and the circuit board are between the display screen and the rear cover and extend along outer profile of the rear cover. The antenna system includes at least one antenna unit. Each antenna unit includes a first gap in the metal frame and a second gap communicated with the first gap; the first gap extends along perimeter of the metal frame to form a strip-like hollow; the second gap extends from the middle of the first gap toward the rear cover until through the metal frame so as to divide the metal frame into a first section and a second section; the first section and the second section are electrically connected with the feeding point to form a first radiator and a second radiator, respectively.

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Abstract: A mobile terminal, including a display screen, a rear cover facing the display screen, a metal frame, and a circuit board; the metal frame and the circuit board are between the display screen and the rear cover and extend along outer profile of the rear cover. The antenna system includes at least one antenna unit. Each antenna unit includes a first gap in the metal frame and a second gap communicated with the first gap; the first gap extends along perimeter of the metal frame to form a strip-like hollow; the second gap extends from the middle of the first gap toward the rear cover until through the metal frame so as to divide the metal frame into a first section and a second section; the first section and the second section are electrically connected with the feeding point to form a first radiator and a second radiator, respectively.

Abstract: Edge termination structures for power semiconductor devices (or power devices) are disclosed. The purpose of this invention is to reduce the difficulty of deep trench etching and dielectric filling by adopting an inverted trapezoidal trench. In order to save the area of edge termination and get a high blocking voltage on condition that the angle between the sidewall of the trench and horizontal is large, fixed charges are introduced at a particular location in the trench. Due to the Coulomb interaction between the ionized impurity in the drift region and the fixed charges, the depletion region of the terminal PN junction can extend fully, which relieves the concentration of electric field there. Therefore, the edge termination can exhibit a high breakdown voltage near to that of the parallel plane junction with a smaller area and the reduced technical difficulty of deep trench etching and dielectric filling.