Patents by Inventor Chi Y. Fu

Chi Y. Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5602965
    Abstract: Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.
    Type: Grant
    Filed: September 14, 1995
    Date of Patent: February 11, 1997
    Assignee: The Regents of the University of California
    Inventor: Chi Y. Fu
  • Patent number: 5538915
    Abstract: Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.
    Type: Grant
    Filed: June 5, 1992
    Date of Patent: July 23, 1996
    Assignee: The Regents of the University of California
    Inventor: Chi Y. Fu
  • Patent number: 4715937
    Abstract: A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500.degree. C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species. Nitrogen is introduced through a quartz tube. A silicon rod connected to a voltage source is placed in the quartz tube and functions as an anodization electrode. The silicon wafer to be treated is connected to a second voltage source and functions as the second electrode of the anodizing circuit. A small DC voltage is applied to the silicon wafer to make the plasma current at the wafer and the silicon rod equal and minimize contamination of the film.
    Type: Grant
    Filed: May 5, 1986
    Date of Patent: December 29, 1987
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Mehrdad M. Moslehi, Chi Y. Fu, Krishna Saraswat