Abstract: Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Abstract: The present invention relates to stem cell-derived mature cardiomyocytes and a cardiovascular disease model using same and, more specifically, to differentiation into mature ventricular cardiomyocytes by culturing stem cells in a medium containing FGF4 and ascorbic acid, and use of the differentiated mature ventricular cardiomyocytes as a cardiovascular disease cell model. The mature ventricular cardiomyocytes, obtained by culturing stem cells in a medium containing FGF4 and ascorbic acid and inducing the differentiation thereof, and cardiovascular disease cell model using same according to the present invention are very useful for screening for cardiovascular disease therapeutic agents and evaluation of the toxicity of new drugs.

Abstract: Disclose is a method for fabricating a semiconductor device. The method includes: forming a groove such as by etching one side surface of a first substrate; attaching a second substrate including a silicon layer on the etched surface of the first substrate formed with the hollow groove; etching the second substrate so as to leave substantially only the silicon layer; forming a thin film structure on the surface of silicon layers of the second substrate; and separating the second substrate formed with the thin film structure from the first substrate. For example, the groove structure may be formed in the lower portion of the device in the process of fabricating the semiconductor device to facilitate the final device separation.

Abstract: Disclose is a method for fabricating a semiconductor device. The method includes: forming a groove such as by etching one side surface of a first substrate; attaching a second substrate including a silicon layer on the etched surface of the first substrate formed with the hollow groove; etching the second substrate so as to leave substantially only the silicon layer; forming a thin film structure on the surface of silicon layers of the second substrate; and separating the second substrate formed with the thin film structure from the first substrate. For example, the groove structure may be formed in the lower portion of the device in the process of fabricating the semiconductor device to facilitate the final device separation.

Abstract: A sensor element that has high measurement precision by providing a resistance-change length ratio corresponding to a direction-specific extension length is provided. The sensor element includes an element body disposed in a sensor body to measure a temperature and a pressure and having a diaphragm deformed based on the temperature or the pressure. Additionally, the sensor element includes pressure-measuring resistors including a second resistor portion and a fourth resistor portion disposed along a diametric direction with respect to a center of an upper surface of the diaphragm and in an extension section on the upper surface of the diaphragm and a first resistor portion and including a third resistor portion disposed outside the second resistor portion or the fourth resistor portion in a compression section on the upper surface of the diaphragm to eliminate a resistance change caused by a pressure-specific temperature change.

Abstract: A sensor element that has high measurement precision by providing a resistance-change length ratio corresponding to a direction-specific extension length is provided. The sensor element includes an element body disposed in a sensor body to measure a temperature and a pressure and having a diaphragm deformed based on the temperature or the pressure. Additionally, the sensor element includes pressure-measuring resistors including a second resistor portion and a fourth resistor portion disposed along a diametric direction with respect to a center of an upper surface of the diaphragm and in an extension section on the upper surface of the diaphragm and a first resistor portion and including a third resistor portion disposed outside the second resistor portion or the fourth resistor portion in a compression section on the upper surface of the diaphragm to eliminate a resistance change caused by a pressure-specific temperature change.

Abstract: The present invention relates to a hot plate structure of a press molding device, and a continuous molding method using the same. The continuous molding method continuously performs primary and secondary overlapping molding operations on the basis of a length unit which is smaller than a set length unit (cutting width) and accordingly cancels out a boundary part, thereby being capable of improving the thickness difference of the boundary part and thus enabling uniform physical properties to be obtained.

Abstract: A signal detecting circuit of an infrared sensor includes: a cell array in which bolometers sensing infrared rays and outputting signal currents are arranged in an N×M format; a level generator that outputs a plurality of bias voltages corresponding to a plurality of bias levels; N resistor non-uniformity correcting circuits that are located in a column direction of the cell array and supply different bias voltages to each of the bolometers; M resistor non-uniformity correcting circuits that are located in a row direction of the cell array and supply different bias voltages to each of the bolometers; a control unit that sets a bias voltage level of each resistor non-uniformity correcting circuit to correct the resistor non-uniformity of the cell array; and N integrators that integrate the signal currents output from the cell array.

Abstract: A signal detecting circuit of an infrared sensor includes: a cell array in which bolometers sensing infrared rays and outputting signal currents are arranged in an N×M format; a level generator that outputs a plurality of bias voltages corresponding to a plurality of bias levels; N resistor non-uniformity correcting circuits that are located in a column direction of the cell array and supply different bias voltages to each of the bolometers; M resistor non-uniformity correcting circuits that are located in a row direction of the cell array and supply different bias voltages to each of the bolometers; a control unit that sets a bias voltage level of each resistor non-uniformity correcting circuit to correct the resistor non-uniformity of the cell array; and N integrators that integrate the signal currents output from the cell array.