Abstract: The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.

Abstract: The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.

Abstract: The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer, and a transparent conductive film formed between the transparent window and the LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals, for example, ITO, InO, SnO, ZnO, etc. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate on which the active layer is grown can be etched away after the transparent window and the active layer are combined with the transparent conductive film.

Abstract: The present invention discloses a method for producing an LED (light emitting diode), in which a transparent conductive film is formed between a transparent window and the front surface of a LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals. The transparent conductive film can be preliminarily formed on one of the transparent window and the LED epitaxial layer or both of them by a suitable process, for example, thermal pressure. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate.

Abstract: The present invention discloses a method for producing a light emitting diode with a mirror and a plated substrate. The mirror and the plated substrate are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.

Abstract: The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.

Abstract: The present invention discloses a method for producing an LED (light emitting diode), in which a transparent conductive film is formed between a transparent window and the front surface of a LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals. The transparent conductive film can be preliminarily formed on one of the transparent window and the LED epitaxial layer or both of them by a suitable process, for example, thermal pressure. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate.

Abstract: The present invention discloses a high brightness light emitting diode and a method for producing the same. The light emitting diode includes a gallium phosphide window and a reflective mirror so as to promote brightness thereof. To produce the light emitting diode, a glass substrate is bonded to the main structure of the light emitting diode and then the temporary substrate for epitaxing thereon can be removed for depositing a reflective mirror. After bonding a permanent substrate below the reflective mirror, the glass substrate is removed, too. By means of the double-bonding process, reflectivity of the mirror is maintained in the present invention.

Abstract: The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer, and a transparent conductive film formed between the transparent window and the LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals, for example, ITO, InO, SnO, ZnO, etc. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate on which the active layer is grown can be etched away after the transparent window and the active layer are combined with the transparent conductive film.

Abstract: The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both electrodes are completed. Accordingly, the epitaxial structure and the mirror will not be damaged, and brightness and heat dissipation of the light emitting device are improved.