Patents by Inventor Chi-Ying Hsieh

Chi-Ying Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET with curved STI
    Patent number: 10622245
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Grant
    Filed: June 16, 2019
    Date of Patent: April 14, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • FINFET WITH CURVED STI
    Publication number: 20190378752
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Application
    Filed: June 16, 2019
    Publication date: December 12, 2019
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • FinFET with curved STI
    Patent number: 10373861
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: August 6, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin