Abstract: A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a source region, a first drain region, and a second drain region. A first portion of the channel region is connected to the source region, a second portion of the channel region is connected to the first drain region, and a third portion of the channel region is connected to the second drain region. The channel width of the second portion is greater than that of the third portion. A capacitive device is connected to the gate of the first transistor. The second transistor includes a source region connected to the second drain region and a drain region connected to the light-emitting element. The third transistor includes a source region connected to the first drain region and a drain region connected to a capacitive device.

Abstract: A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a source region, a first drain region, and a second drain region. A first portion of the channel region is connected to the source region, a second portion of the channel region is connected to the first drain region, and a third portion of the channel region is connected to the second drain region. The channel width of the second portion is greater than that of the third portion. A capacitive device is connected to the gate of the first transistor. The second transistor includes a source region connected to the second drain region and a drain region connected to the light-emitting element. The third transistor includes a source region connected to the first drain region and a drain region connected to a capacitive device.

Abstract: A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a source region, a first drain region, and a second drain region. A first portion of the channel region is connected to the source region, a second portion of the channel region is connected to the first drain region, and a third portion of the channel region is connected to the second drain region. The channel width of the second portion is greater than that of the third portion. A capacitive device is connected to the gate of the first transistor. The second transistor includes a source region connected to the second drain region and a drain region connected to the light-emitting element. The third transistor includes a source region connected to the first drain region and a drain region connected to a capacitive device.

Abstract: A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a source region, a first drain region, and a second drain region. A first portion of the channel region is connected to the source region, a second portion of the channel region is connected to the first drain region, and a third portion of the channel region is connected to the second drain region. The channel width of the second portion is greater than that of the third portion. A capacitive device is connected to the gate of the first transistor. The second transistor includes a source region connected to the second drain region and a drain region connected to the light-emitting element. The third transistor includes a source region connected to the first drain region and a drain region connected to a capacitive device.