Patents by Inventor Chi-Yuan Chen
Chi-Yuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11227846Abstract: A semiconductor package includes a base having an upper surface and a lower surface opposite to the upper surface. An antenna array structure is embedded at the upper surface of the base. An IC die is mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation. Solder ball pads are disposed on the lower surface of the base and arranged around the IC die. The semiconductor package further includes a metal thermal interface layer having a backside metal layer that is in direct contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.Type: GrantFiled: January 14, 2020Date of Patent: January 18, 2022Assignee: MEDIATEK INC.Inventors: Chia-Hao Hsu, Tai-Yu Chen, Shiann-Tsong Tsai, Hsing-Chih Liu, Yao-Pang Hsu, Chi-Yuan Chen, Chung-Fa Lee
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Publication number: 20210217707Abstract: A semiconductor package includes a substrate component having a first surface, a second surface opposite to the first surface, and a sidewall surface extending between the first surface and the second surface; a re-distribution layer (RDL) structure disposed on the first surface and electrically connected to the first surface through first connecting elements comprising solder bumps or balls; a plurality of ball grid array (BGA) balls mounted on the second surface of the substrate component; and at least one integrated circuit die mounted on the RDL structure through second connecting elements.Type: ApplicationFiled: December 3, 2020Publication date: July 15, 2021Inventors: Yi-Lin Tsai, Shih-Chao Chiu, Wen-Sung Hsu, Sang-Mao Chiu, Chi-Yuan Chen, Yao-Pang Hsu
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Patent number: 10756040Abstract: The invention provides a semiconductor package. The semiconductor package includes a semiconductor die and a conductive pillar bump structure and a conductive plug. The semiconductor die has a die pad thereon. The conductive pillar bump structure is positioned overlying the die pad. The conductive pillar bump structure includes an under bump metallurgy (UBM) stack having a first diameter and a conductive plug on the UBM stack. The conductive plug has a second diameter that is different than the first diameter.Type: GrantFiled: January 26, 2018Date of Patent: August 25, 2020Assignee: MediaTek Inc.Inventors: Ta-Jen Yu, Chi-Yuan Chen, Wen-Sung Hsu
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Publication number: 20200243462Abstract: A semiconductor package includes a base having an upper surface and a lower surface opposite to the upper surface. An antenna array structure is embedded at the upper surface of the base. An IC die is mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation. Solder ball pads are disposed on the lower surface of the base and arranged around the IC die. The semiconductor package further includes a metal thermal interface layer having a backside metal layer that is in direct contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.Type: ApplicationFiled: January 14, 2020Publication date: July 30, 2020Inventors: Chia-Hao Hsu, Tai-Yu Chen, Shiann-Tsong Tsai, Hsing-Chih Liu, Yao-Pang Hsu, Chi-Yuan Chen, Chung-Fa Lee
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Publication number: 20200243464Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.Type: ApplicationFiled: February 27, 2020Publication date: July 30, 2020Inventors: Chia-Hao Hsu, Tai-Yu Chen, Shiann-Tsong Tsai, Hsing-Chih Liu, Yao-Pang Hsu, Chi-Yuan Chen, Chung-Fa Lee
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Publication number: 20200118935Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.Type: ApplicationFiled: December 16, 2019Publication date: April 16, 2020Inventors: Hong-Mao LEE, Huicheng CHANG, Chia-Han LAI, Chi-Hsuan NI, Cheng-Tung LIN, Huang-Yi HUANG, Chi-Yuan CHEN, Li-Ting WANG, Teng-Chun TSAI, Wei-Jung LIN
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Patent number: 10549017Abstract: A suction disc is configured for abutting against a dressing covering over a wound. The suction disc includes a base plate, a case, a negative pressure, a first sensing device and a second sensing device. The base plate has a first surface and a second surface opposite to each other. The first surface abuts against the dressing. The base plate has a first opening and a second opening respectively communicating with the first surface. The case has a first chamber and a second chamber. The case communicates with the second surface. The first chamber communicates with the first opening. The second chamber communicates with the second opening. The negative pressure device communicates with the second chamber. The negative pressure device provides a negative pressure to the second chamber. The first sensing device communicates with the first chamber. The second sensing device communicates with the second chamber.Type: GrantFiled: February 22, 2017Date of Patent: February 4, 2020Assignee: SUNEETEK(XIAMEN) MEDICAL EQUIPMENT CO., LTDInventors: Shih-Hua Hsiao, Chi-Yuan Chen, Bo-Cheng Huang
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Patent number: 10510664Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.Type: GrantFiled: August 14, 2017Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hong-Mao Lee, Huicheng Chang, Chia-Han Lai, Chi-Hsuan Ni, Cheng-Tung Lin, Huang-Yi Huang, Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Wei-Jung Lin
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Publication number: 20190201599Abstract: The present invention relates to a negative pressure wound therapy device, system and method. The negative pressure wound therapy device is connected with a dressing, and comprises a housing, a control circuit board, a pump, and an aspiration conduit. The pump generates negative pressure. The pump may comprise a voltage-actuated deformation element (such as piezoelectric vibration element) to push fluid from an aspiration end to a discharge end. The aspiration conduit has a pump end and a dressing end. The pump end is fluidly connected to the aspiration end of the pump, and the dressing end is fluidly connected to the dressing used for covering a wound. The control circuit board is disposed in the housing, controls the pump to generate the negative pressure in the aspiration conduit, and applies negative pressure to the wound covered by the dressing via the aspiration conduit.Type: ApplicationFiled: December 6, 2018Publication date: July 4, 2019Inventors: PO-HAN CHANG, SHIH HUA HSIAO, BO CHENG HUANG, CHI YUAN CHEN, TING HSUAN CHUNG
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Patent number: 10283359Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: GrantFiled: April 17, 2017Date of Patent: May 7, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Patent number: 10157995Abstract: A method includes forming a gate stack over a semiconductor region, depositing an impurity layer over the semiconductor region, and depositing a metal layer over the impurity layer. An annealing is then performed, wherein the elements in the impurity layer are diffused into a portion of the semiconductor region by the annealing to form a source/drain region, and wherein the metal layer reacts with a surface layer of the portion of the semiconductor region to form a source/drain silicide region over the source/drain region.Type: GrantFiled: August 9, 2013Date of Patent: December 18, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Ting Wang, Teng-Chun Tsai, Chun-Hsiung Lin, Cheng-Tung Lin, Chi-Yuan Chen, Hong-Mao Lee, Huicheng Chang
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Publication number: 20180233474Abstract: The invention provides a semiconductor package. The semiconductor package includes a semiconductor die and a conductive pillar bump structure and a conductive plug. The semiconductor die has a die pad thereon. The conductive pillar bump structure is positioned overlying the die pad. The conductive pillar bump structure includes an under bump metallurgy (UBM) stack having a first diameter and a conductive plug on the UBM stack. The conductive plug has a second diameter that is different than the first diameter.Type: ApplicationFiled: January 26, 2018Publication date: August 16, 2018Inventors: Ta-Jen YU, Chi-Yuan CHEN, Wen-Sung HSU
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Publication number: 20180200417Abstract: A suction disc is configured for abutting against a dressing covering over a wound. The suction disc includes a base plate, a case, a negative pressure, sensing device and a second sensing d evice. The base plate has a first surface and a second surface opposite to each other. The first surface abuts against the dressing. The base plate has a first opening and a second opening respectively communicating with the first surface. The case has a first chamber and a second chamber. The case communicates with the second surface. The firs chamber communicates with the first opening. The second chamber communicates with the second opening. The negative pressure device communicates with the second chamber. The negative pressure device provides a negative pressure to the second chamber. The first sensing device communicates with the first chamber. The second sensing device communicates with the second chamber.Type: ApplicationFiled: February 22, 2017Publication date: July 19, 2018Inventors: Shih-Hua HSIAO, Chi-Yuan CHEN, Bo-Cheng HUANG
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Publication number: 20180200418Abstract: A suction disc is configured for abutting against a dressing covering over a wound. The suction disc includes a base plate and a case. The base plate has a first surface and a second surface opposite to each other. The first surface abuts against the dressing. The base plate has a first opening and a second opening. The first opening and the second opening respectively communicates with the first surface. The case has a first chamber and a second chamber. The case communicates with the second surface. The first chamber communicates with the first opening. The second chamber communicates with the second opening. The suction disc has a channel disposed inside a sidewall of the case surrounding the first chamber and penetrating through the base plate. An end of the channel communicates with the first chamber. Another end of the channel communicates with the first surface.Type: ApplicationFiled: February 24, 2017Publication date: July 19, 2018Inventor: Chi-Yuan CHEN
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Patent number: 9978583Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: GrantFiled: April 6, 2017Date of Patent: May 22, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Patent number: 9856480Abstract: The invention provides DNAzymes which are capable to silence the expression of EGFR at allele-specific level. These allele-specific DNAzymes against EGFR T790M mutation will knockdown the expression of EGFR T790M mRNA while keeping EGFR wild-type mRNA intact. Hence, these allele-specific DNAzymes against EGFR T790M mutation may overcome T790M-derived TKI resistance accompanied with lower unwanted side effects on normal cells in lung cancer patients.Type: GrantFiled: January 14, 2014Date of Patent: January 2, 2018Assignees: National Taiwan University, ACADEMIA SINICAInventors: Pan-Chyr Yang, Wei-Yun Lai, Konan Peck, Cheng-Ju Chang, Chi-Yuan Chen, Shuenn-Chen Yang
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Publication number: 20170345765Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.Type: ApplicationFiled: August 14, 2017Publication date: November 30, 2017Inventors: Hong-Mao Lee, Huicheng Chang, Chia-Han Lai, Chi-Hsuan Ni, Cheng-Tung Lin, Huang-Yi Huang, Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Wei-Jung Lin
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Patent number: 9735107Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.Type: GrantFiled: March 3, 2016Date of Patent: August 15, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hong-Mao Lee, Huicheng Chang, Chia-Han Lai, Chi-Hsuan Ni, Cheng-Tung Lin, Huang-Yi Huang, Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Wei-Jung Lin
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Publication number: 20170221710Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: ApplicationFiled: April 17, 2017Publication date: August 3, 2017Inventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Publication number: 20170213720Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: ApplicationFiled: April 6, 2017Publication date: July 27, 2017Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai