Abstract: An embodiment includes a device including a first semiconductor fin extending from a substrate, a second semiconductor fin extending from the substrate, a hybrid fin over the substrate, the hybrid fin disposed between the first semiconductor fin and the second semiconductor fin, and the hybrid fin having an oxide inner portion extending downward from a top surface of the hybrid fin. The device also includes a first isolation region between the second semiconductor fin, the first semiconductor fin, and the hybrid fin, the hybrid fin extending above a top surface of the first isolation region, a high-k gate dielectric over sidewalls of the hybrid fin, sidewalls of the first semiconductor fin, and sidewalls of the second semiconductor fin, a gate electrode on the high-k gate dielectric, and source/drain regions on the first semiconductor fin on opposing sides of the gate electrode.

Abstract: A cell layout design for an integrated circuit. In one embodiment, the integrated circuit includes a dual-gate cell forming two transistors connected with each other via a common source/drain terminal. The dual-gate cell includes an active region, two gate lines extending across the active region, at least one first gate via disposed on one or both of the two gate lines and overlapped with the active region, and second gate vias disposed on one or both of the two gate lines and located outside the active region.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, an isolation insulating layer is formed such that an upper portion of the fin structure protrudes from the isolation insulating layer, a gate dielectric layer is formed by a deposition process, a nitridation operation is performed on the gate dielectric layer, and a gate electrode layer is formed over the gate dielectric layer. The gate dielectric layer as formed includes silicon oxide, and the nitridation operation comprises a plasma nitridation operation using a N2 gas and a NH3 gas.

Abstract: A one-time programmable (OTP) memory cell includes a substrate having an active area surrounded by an isolation region. A divot is disposed between the active area and the isolation region. A transistor is disposed on the active area. A diffusion-contact fuse is electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region. A sidewall surface of the diffusion region in the divot is covered by the silicide layer. The divot is filled with the contact.

Abstract: A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 ?m and less than 200 ?m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 ?m and 800 ?m.

Abstract: A one-time programmable (OTP) memory cell includes a substrate comprising an active area surrounded by an isolation region, a transistor disposed on the active area, and a diffusion-contact fuse electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region.

Abstract: A manufacturing method of a proton battery and a proton battery module are provided. The manufacturing method of the proton battery includes the steps of providing a positive electrode, a negative electrode, and a polymer exchange membrane, and assembling the positive electrode, the negative electrode, and the polymer exchange membrane, in which the polymer exchange membrane is interposed between the positive electrode and the negative electrode. The step of providing the negative electrode at least includes forming a carbon layer on a substrate, and performing a polarization process on the carbon layer.

Abstract: A manufacturing method of a proton battery and a proton battery module are provided. The manufacturing method of the proton battery includes the steps of providing a positive electrode, a negative electrode, and a polymer exchange membrane, and assembling the positive electrode, the negative electrode, and the polymer exchange membrane, in which the polymer exchange membrane is interposed between the positive electrode and the negative electrode. The step of providing the negative electrode at least includes forming a carbon layer on a substrate, and performing a polarization process on the carbon layer.

Abstract: A membrane-electrode assembly for water electrolysis including a proton-exchange membrane, a first catalyst layer, a second catalyst layer, a first gas diffusion layer, a second gas diffusion layer and a first sensor chip. The proton-exchange membrane is disposed between an inner side of the first catalyst layer and an inner side of the second catalyst layer. The first gas diffusion layer is disposed on an outer side of the first catalyst layer. The second gas diffusion layer is disposed on an outer side of the second catalyst layer. The first sensor chip is sandwiched between the first catalyst layer and the first gas diffusion layer to sense an environmental change where water electrolysis takes place.

Abstract: A membrane-electrode assembly for water electrolysis including a proton-exchange membrane, a first catalyst layer, a second catalyst layer, a first gas diffusion layer, a second gas diffusion layer and a first sensor chip. The proton-exchange membrane is disposed between an inner side of the first catalyst layer and an inner side of the second catalyst layer. The first gas diffusion layer is disposed on an outer side of the first catalyst layer. The second gas diffusion layer is disposed on an outer side of the second catalyst layer. The first sensor chip is sandwiched between the first catalyst layer and the first gas diffusion layer to sense an environmental change where water electrolysis takes place.

Abstract: A cell module includes an ion exchange membrane, a first electrode, a second electrode, a first current collector plate, and a second current collector plate. The first electrode and the second electrode are disposed at two sides of the ion exchange membrane, wherein a sensing element is disposed in the first electrode, and the first electrode includes an insulating frame. The first current collector plate is located at one side of the first electrode, and the second current collector plate is located at one side of the second electrode.

Abstract: A membrane-electrode assembly for water electrolysis including a proton-exchange membrane, a first catalyst layer, a second catalyst layer, a first gas diffusion layer, a second gas diffusion layer and a first sensor chip. The proton-exchange membrane is disposed between an inner side of the first catalyst layer and an inner side of the second catalyst layer. The first gas diffusion layer is disposed on an outer side of the first catalyst layer. The second gas diffusion layer is disposed on an outer side of the second catalyst layer. The first sensor chip is sandwiched between the first catalyst layer and the first gas diffusion layer to sense an environmental change where water electrolysis takes place.

Abstract: A flow battery stack includes a cell and two end plates, and the end plates are respectively disposed at two sides of the cell. The cell includes a membrane electrode assembly (MEA), a sensing chip, and a flow guide plate. The sensing chip has a frame part and a sensing part, and the sensing part connects to the frame part. The frame part is disposed between the MEA and the flow guide plate, and the sensing part extends to a flow region of the flow guide plate so as to sense the temperature or the flow capacity of a liquid in the flow region.

Abstract: A distributed key-based encryption system comprises a sending side and a receiving side. The sending side comprises a key-data generation unit, an encryption unit, a first wireless-transfer unit, and a second wireless-transfer unit. The receiving side comprises a third wireless-transfer unit, a fourth wireless-transfer unit, and a decryption unit. The communication between the second wireless-transfer unit and the fourth wireless-transfer unit is directional.

Abstract: The invention provides an operating method of low-power-consumption wireless sensor network system, which comprises a plurality of nodes. Wherein, the nodes can be enforced to enter a sleep state at a preset times and enter an awake state by a first light.

Abstract: A debugging system using optical transmission comprises a sending side and a receiving side. The sending side comprises a debugging-data-generation unit, a modulation unit, and an optical-transmission apparatus. The debugging-data-generation unit generates debugging data according to an operation of the sending side. The modulation unit modulates the debugging data to generate a modulation signal. The optical-transmission apparatus coupled to the modulation unit converts the modulation signal into a first light and transmits the first light. The receiving side comprises an optical-receiving apparatus, a demodulation unit and a data storage device. The optical-receiving apparatus receives the first light and converts the first light into the modulation signal. The demodulation unit is coupled to the optical-receiving apparatus and demodulates the modulation signal into the debugging data. The data storage device receives and saves the debugging data.

Abstract: A distributed key-based encryption system comprises a sending side and a receiving side. The sending side comprises a key-data generation unit, an encryption unit, a first wireless-transfer unit, and a second wireless-transfer unit. The receiving side comprises a third wireless-transfer unit, a fourth wireless-transfer unit, and a decryption unit. The communication between the second wireless-transfer unit and the fourth wireless-transfer unit is directional.

Abstract: A debugging system using optical transmission comprises a sending side and a receiving side. The sending side comprises a debugging-data-generation unit, a modulation unit, and an optical-transmission apparatus. The debugging-data-generation unit generates debugging data according to an operation of the sending side. The modulation unit modulates the debugging data to generate a modulation signal. The optical-transmission apparatus coupled to the modulation unit converts the modulation signal into a first light and transmits the first light. The receiving side comprises an optical-receiving apparatus, a demodulation unit and a data storage device. The optical-receiving apparatus receives the first light and converts the first light into the modulation signal. The demodulation unit is coupled to the optical-receiving apparatus and demodulates the modulation signal into the debugging data. The data storage device receives and saves the debugging data.

Abstract: The invention provides an operating method of low-power-consumption wireless sensor network system, which comprises a plurality of nodes. Wherein, the nodes can be enforced to enter a sleep state at a preset times and enter an awake state by a first light.

Abstract: The present invention discloses a protecting jacket, which includes a protecting jacket body and a semiconductor cooler. The semiconductor cooler is disposed on an inner surface of the protecting jacket body. The semiconductor cooler includes a Peltier element, a thermistor sensor, a PWM controller, and a switching element. The PWM controller is respectively coupled to the thermistor sensor and the switching element, and the switching element is coupled to the Peltier element. A circuit is connected by the switching element for making the semiconductor cooler work when a temperature of an electronic product is higher than a constant value. In distinct contrast, the circuit is disconnected by the switching element for stopping the semiconductor cooler working when the temperature of the electronic product is lower than the constant value. Therefore, the electronic product can maintain a longer working time, and conserving energy is achieved.