Patents by Inventor Chi-Yuan Liang

Chi-Yuan Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Co-implant for backside illumination sensor
    Patent number: 8748952
    Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: June 10, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
  • Co-implant for Backside Illumination Sensor
    Publication number: 20130249037
    Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
    Type: Application
    Filed: May 10, 2013
    Publication date: September 26, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
  • Co-implant for backside illumination sensor
    Patent number: 8466530
    Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: June 18, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
  • Co-implant for Backside Illumination Sensor
    Publication number: 20130001722
    Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh