Abstract: A phase shifter includes a first transistor and a second transistor. The first transistor includes a first gate terminal configured to receive a first voltage. The first transistor is configured to adjust at least a resistance or a first capacitance of the phase shifter responsive to the first voltage. The second transistor is coupled to the first transistor. The second transistor includes a second gate terminal configured to receive a second voltage. The second transistor is configured to adjust a second capacitance of the phase shifter responsive to the second voltage. The second gate terminal includes a first polysilicon portion and a second polysilicon portion extending in a first direction. The first polysilicon portion and the second polysilicon portion are positioned along opposite edges of an active region of the first transistor and the second transistor.

Abstract: Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.

Abstract: An oscillator includes a forward stage including first and second terminals and a transformer-coupled band-pass filter (BPF) coupled between the first and second terminals and including a coupling device between the first and second terminals, and a transformer including first and second windings in a metal layer of an IC. The first winding includes a first conductive structure coupled to the first terminal and a second conductive structure coupled to a voltage node, a third conductive structure including first and second extending portions connected to the first and second conductive structures. The second winding includes a fourth conductive structure including a third extending portion coupled to the voltage node, and a fourth extending portion coupled to the second terminal. The third extending portion is between the second conductive structure and the first extending portion, and the fourth extending portion is between the first conductive structure and the second extending portion.

Abstract: A differential oscillator includes a differential circuit and a transformer-coupled band-pass filter (BPF) coupled between first and second output nodes. The BPF includes a coupling device coupled between the output nodes and a transformer including first and second windings in a metal layer of an IC. The first winding includes first and second conductive structures coupled to the first output node and a voltage node, respectively, and a third conductive structure including first and second extending portions connected to the first and second conductive structures, respectively. The second winding includes a fourth conductive structure including a third extending portion coupled to the voltage node and a fourth extending portion coupled to the second output node. The third extending portion is between the second conductive structure and the first extending portion, and the fourth extending portion is between the first conductive structure and the second extending portion.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: The present application discloses a trading decision generation system and method. The trading decision generation method includes: obtaining a market information; performing a market view generation module to generate a market view according to the market information; performing a state integration module to generate a state according to the market information, the market view and a trading information; performing a decision parameter generation module to generate a decision parameter according to the state; and performing a decision generation module to generate a decision according to the decision parameter.

Abstract: An investment strategy rule generation method including the following steps is provided. Firstly, an investment strategy rule generator generates an investment strategy model according to an investment history trend. Then, a total investment return of each of N candidate investment rules is obtained by the investment strategy rule calculator, wherein each of the N candidate investment rules includes a candidate market direction rule. The obtaining step includes: performing an investment simulation in each of multiple time points in a time window of a time interval. Then, the total investment return under the operation of the investment simulations over the time interval is calculated by the investment strategy rule calculator. Then, the candidate investment rule corresponding to the best of the total investment returns is used as an investment strategy rule of the investment strategy model by the investment strategy rule calculator.

Abstract: An investment strategy rule generation method including the following steps is provided. Firstly, an investment strategy rule generator generates an investment strategy model according to an investment history trend. Then, a total investment return of each of N candidate investment rules is obtained by the investment strategy rule calculator, wherein each of the N candidate investment rules includes a candidate market direction rule. The obtaining step includes: performing an investment simulation in each of multiple time points in a time window of a time interval. Then, the total investment return under the operation of the investment simulations over the time interval is calculated by the investment strategy rule calculator. Then, the candidate investment rule corresponding to the best of the total investment returns is used as an investment strategy rule of the investment strategy model by the investment strategy rule calculator.