Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A wafer carrying apparatus disposed in a dry etching chamber is provided. The wafer carrying apparatus comprises at least an insulation plate, a conductive element and an insulation ring. The insulation plate has a cavity and a protruding portion surrounding the cavity. The conductive element is disposed in the cavity. The insulation ring covers at least the exposed top surface of the protruding portion.

Abstract: A method for cleaning the surface of an electrostatic chuck of a semiconductor apparatus is disclosed. The semiconductor apparatus includes a sputtering chamber having an electrostatic chuck for holding a wafer. This method includes the steps of: adjusting the semiconductor apparatus to a cleaning state and a type of plasma is being generated at this time by which oxidative contaminant is removed, and adjusting the semiconductor apparatus to a discharging state to stop the plasma. The cleaning state includes at least three steps: inserting a protective gas, adjusting the RF power to an appropriate range, and maintaining the radio frequency power within the appropriate range for a period of time. The discharging state includes at least two steps: resetting the RF power of said electrostatic chuck to zero, and discharging the protective gas from the sputtering chamber.