Patents by Inventor Chia Chen

Chia Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190058070
    Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Inventors: Yu-Hung Cheng, Chia-Shiung Tsai, Cheng-Ta Wu, Xiaomeng Chen, Yen-Chang Chu, Yeur-Luen Tu
  • Publication number: 20190058832
    Abstract: An image capturing module having multiple lenses, in which primary driving magnets of auto-focus module equipped in a first lens module and a second lens module will not cover an adjacent surface located between these two lens modules in the same time. A relatively smaller magnet is used to be the auxiliary driving magnet of optical image stabilization (OIS) module equipped in the first lens module and the second lens module. By using the aforementioned configuration of the primary and auxiliary driving magnets, interference of magnetic fields is minimized, and thus the distance between the first and second lens modules can be decreased, and the space of mobile phone having the image capturing module is saved. Moreover, such configuration can be used on the image capturing module having many lens modules.
    Type: Application
    Filed: August 15, 2018
    Publication date: February 21, 2019
    Applicant: PowerGate Optical Inc.
    Inventors: Ying Chun Huang, Yu Chia Chen, Hsieh Jen Chuang, Te Pao Ho, Shih Chan Wen
  • Publication number: 20190058813
    Abstract: An IP camera including a camera body and a cover is provided. The camera body includes an engaging face arranged on a side contoured surface surrounding the camera body and has a receiving slot being concave inwards the camera body from the engaging face for insertion of a memory card. The cover has an opening and an internal surface surrounding the opening. The internal surface of the cover is configured to surround and engage with the engaging face of the camera body. The cover is configured to block an entrance path to the receiving slot when the internal surface of the cover surrounds and engages with the engaging face of the camera body.
    Type: Application
    Filed: April 12, 2018
    Publication date: February 21, 2019
    Inventor: Chia-An CHEN
  • Publication number: 20190058020
    Abstract: A transparent display device including a substrate having a light emitting region and a light transmitting region, a light emitting element located in the light emitting region, a first wall structure having an undercut sidewall, a first top conductive pattern and a barrier multi-layer structure is provided. The first wall structure forms the boundary between the light emitting region and the light transmitting region and the light emitting element is located in the light emitting region surrounded by the first wall structure. The first top conductive pattern is disposed on the top surface of the first wall structure. The barrier multi-layer structure is disposed on the light emitting element. The barrier multi-layer structure includes a first barrier layer and a second barrier layer. An overlapping portion of the first barrier layer and the second barrier is located in the light emitting region surrounded by the first wall structure.
    Type: Application
    Filed: March 28, 2018
    Publication date: February 21, 2019
    Applicants: Industrial Technology Research Institute, Intellectual Property Innovation Corporation
    Inventors: Yi-Shou Tsai, Yu-Hsiang Tsai, Chih-Chia Chang, Kuan-Ting Chen, Kuang-Jung Chen, Yu-Tang Tsai
  • Publication number: 20190056759
    Abstract: A joystick has a related control method to provide displayed object control function. The joystick includes a body, an image sensor and a processor. The body has a deformable bottom surface whereon a pattern is disposed. The image sensor is disposed under the body and adapted to capture a plurality of frames about the pattern. The processor is electrically connected with the image sensor and adapted to generate a displayed object control signal according to pattern variation within the plurality of frames.
    Type: Application
    Filed: August 20, 2017
    Publication date: February 21, 2019
    Inventors: Wei-Chung Wang, Hsin-Chia Chen, Hui-Hsuan Chen, Chao-Chien Huang, Chu-Hung Nien
  • Publication number: 20190058050
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.
    Type: Application
    Filed: September 20, 2017
    Publication date: February 21, 2019
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang, Chun-Jen Huang
  • Patent number: 10211367
    Abstract: An LED fabrication method includes forming release holes by focusing a laser at the substrate back surface, and forming stealth laser-blast areas by focusing a laser inside the substrate on positions corresponding to the release holes; communicating the release holes with the stealth laser-blast areas to release impurities generated during forming of the stealth laser-blast areas from the substrate through the release holes, thereby avoiding low external quantum efficiency resulting from adherence of the released material to the side wall of the stealth laser-blast areas. By focusing on a position with 10 ?m˜40 ?m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.
    Type: Grant
    Filed: May 27, 2017
    Date of Patent: February 19, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chia-hung Chang, Gong Chen, Su-hui Lin, Kang-wei Peng, Sheng-hsien Hsu, Chuan-gui Liu, Xiao-xiong Lin, Yu Zhou, Jing-jing Wei, Jing Huang
  • Patent number: 10211314
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.
    Type: Grant
    Filed: October 22, 2017
    Date of Patent: February 19, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
  • Patent number: 10210412
    Abstract: The present disclosure is related to an optical encoder which is configured to provide precise coding reference data by feature recognition technology. To apply the present disclosure, it is not necessary to provide particular dense patterns on a working surface. The precise coding reference data can be generated by detecting surface features of the working surface.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: February 19, 2019
    Assignee: PIXART IMAGING INC.
    Inventors: Boon-How Kok, Keen-Hun Leong, Ching-Geak Chan, Chiang-Hee Lim, Chu-Leik Ho, Hsin-Chia Chen, Yen-Min Chang
  • Patent number: 10209723
    Abstract: A low-voltage differential signaling (LVDS) driving circuit, coupled to a load resistor via a first output end and a second output end, includes: a voltage generating unit, providing a first reference voltage; a first switch, coupled between the voltage generating unit and a first node; a second switch, coupled between the voltage generating unit and a second node; a third switch, coupled between the first node and a third node, the third node having a second reference voltage; a fourth switch, coupled between the second node and the third node; a first resistor, coupled between the first node and the first output end; and a second resistor, coupled between the second node and the second output end. The first resistor and the second resistor are in a series connection with the load resistor.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: February 19, 2019
    Assignee: MSTAR SEMICONDUCTOR, INC.
    Inventors: Yu-Hsiang Huang, Jyun-Yang Shih, Chun-Chia Chen
  • Publication number: 20190051926
    Abstract: A lithium ion battery is provided, which includes a positive electrode, a negative electrode, and an electrolyte disposed between the positive electrode and the negative electrode. The negative electrode includes a current collector and a ?-phase-based polyvinylidene fluoride (?-PVDF) layer coating on the current collector. The ?-PVDF layer may have a thickness of 1 ?m to 10 ?m.
    Type: Application
    Filed: August 9, 2018
    Publication date: February 14, 2019
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chung-Hsiang CHAO, Chia-Chen FANG, Chih-Ching CHANG, Wei-Hsin WU, Nae-Lih WU, Sheng-Hui WU, Jing LUO
  • Publication number: 20190050086
    Abstract: A touch device is provided, including a first substrate, a touch sensing structure, a plurality of first electrodes, a first register mark and a circuit board. The touch sensing structure is disposed on the first substrate. The first electrodes are disposed on the first substrate and arranged along a first direction, wherein a portion of the first electrodes are electrically connected to the touch sensing structure. The first register mark is disposed on the first substrate. The circuit board is partially overlapping the first substrate in a vertical projection direction and electrically connected to the portion of the first electrodes.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Inventors: Chia-Hsiung CHANG, Yang-Chen CHEN, Kuo-Chang SU, Hsia-Ching CHU
  • Publication number: 20190053085
    Abstract: A first base station (BS) for handling a flexible duplexing comprises at least one storage device and at least one processing circuit coupled to the at least one storage device. The at least one storage device stores, and the at least one processing circuit is configured to execute instructions of: scheduling a first cell of the first BS according to a first uplink/downlink (UL/DL) configuration, wherein the first UL/DL configuration comprises at least one flexible slot; and transmitting assistance information of the at least one flexible slot of the first cell from the first cell to a second cell.
    Type: Application
    Filed: August 8, 2018
    Publication date: February 14, 2019
    Inventors: Wei-Chen Pao, Chien-Min Lee, Chia-Wen Hsieh
  • Patent number: 10201345
    Abstract: Systems and methods are provided for suturing tissue. An elongated deployment shaft carries a needle deployment assembly with needles carrying suture material. A needle catcher is disposed over the shaft and configured to engage and retain at least a portion of each of the needles carrying the suture material when the needles are passed through the tissue to be sutured to a proximal position.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: February 12, 2019
    Assignee: Terumo Medical Corporation
    Inventors: Yu-Shih Weng, Shih-Jui Han, Shih-Ming Wang, Chung-Chu Chen, Hsiao-Wei Tang, Chun-Chia Juan
  • Publication number: 20190043932
    Abstract: A pixel structure of an organic light emitting diode display comprises a substrate and a plurality of pixels arranged on the substrate. The plurality of pixels is closely arranged. Each of the pixels is a light-emitting region. Each of the pixels comprises a plurality of sub-regions arranged in at least one column. Each sub-region of each of the column of the pixels comprises a color sub-pixel, a transparent sub-pixel or a sensing component. At least one of the pluralities of sub-regions of each pixel is the sensing component and the sensing component is arranged in the light-emitting region. The pixel structure of the organic light emitting diode display of the disclosure has a sensing function in addition to the display function, and at the same time the such arrangement enables the display to have a resolution of more than 500 ppi.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 7, 2019
    Applicant: ZIXU OPTRONICS TECHNOLOGY (SHANGHAI) LIMITED
    Inventors: Kuo-Hsing SHIH, Chia-Chen LI, Chin-Rung YAN
  • Publication number: 20190043877
    Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.
    Type: Application
    Filed: August 1, 2017
    Publication date: February 7, 2019
    Inventors: Kuo-Lung Li, Ping-Chia Shih, Wen-Peng Hsu, Chia-Wen Wang, Meng-Chun Chen, Chih-Hao Pan
  • Publication number: 20190044087
    Abstract: The present disclosure provides an organic light emitting diode and method for manufacturing the same. The organic light emitting diode includes a substrate; an anode layer formed on a substrate, a hole transmission layer formed on the anode layer, a hole transmission auxiliary layer formed on the hole transmission layer and performed by a photolithography process, wherein the hole transmission auxiliary layer protects a surface of the hole transmission layer, at least one illuminating block formed on the hole transmission auxiliary layer, wherein the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer, an electron transmission auxiliary layer formed on the at least one illuminating block; an electron transmission layer formed on the electron transmission auxiliary layer and a cathode layer formed on the electron transmission layer.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 7, 2019
    Applicant: ZIXU OPTRONICS TECHNOLOGY (SHANGHAI) LIMITED
    Inventors: Kuo-Hsing SHIH, Chia-Chen LI, Chin-Rung YAN
  • Publication number: 20190043730
    Abstract: A method for forming a semiconductor device structure includes forming a first dielectric layer over a semiconductor substrate and forming an etch stop layer with a hole over the first dielectric layer. The method also includes forming a second dielectric layer over the etch stop layer and forming a first mask element with a trench opening over the second dielectric layer. The method further includes forming a second mask element over the first mask element, and the second mask element has a via opening. In addition, the method includes etching the second dielectric layer through the via opening and etching the second dielectric layer through the trench opening. As a result, a trench and a via hole are formed in the second dielectric layer and the first dielectric layer, respectively. The method includes forming a conductive material in the via hole and the trench.
    Type: Application
    Filed: August 3, 2017
    Publication date: February 7, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiang-Wei LIU, Chia-Tien WU, Wei-Chen CHU
  • Patent number: 10199385
    Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: February 5, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Lung Li, Ping-Chia Shih, Wen-Peng Hsu, Chia-Wen Wang, Meng-Chun Chen, Chih-Hao Pan
  • Patent number: D839714
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: February 5, 2019
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Wei-Ning Chai, I-Chen Chen, Li-Fang Chen, Che-Hsien Lin, Che-Hsien Chu, Wei-Hao Lan, Chia-Chi Lin, Cheng-Shiue Jan