Abstract: A method for determining a road type includes measuring, for a preset period, a magnetic field of an environment in which an electronic device is located to obtain a plurality of magnetic field values, calculating an absolute value of a difference between every two adjacent magnetic field values among the magnetic field values sorted in chronological order, calculating an average of the absolute values related to the magnetic field values to serve as a variation value for the environment, determining whether the variation value is smaller than a predetermined threshold value, determining that the environment is a surface road when the determination result is affirmative, and determining that the environment is a non-surface road when the determination result is negative.

Abstract: A vehicular positioning method is provided for positioning a vehicle that is running on a road, where the road has a plurality of feature objects that have the same detectable feature and that are disposed along the road. The vehicle is provided with a system that counts a number of the feature objects the vehicle has passed by as the vehicle runs on the road, and that calculates a travelling distance the vehicle has traveled on the road based on the number counted thereby, an object length of the feature objects, and spacing between adjacent two of the feature objects. Then, the system displays an electronic map that shows the road and that indicates a position of the vehicle on the road based on the calculated travelling distance.

Abstract: Pressure assisted positioning method and device thereof are disclosed in the present invention. The pressure assisted positioning device is exerted for positioning a target under the circumstance of altitude change since the target enters a specific region. The pressure assisted positioning method includes the following steps. First, confirming the entrance of the specific region of the target and detecting a plurality of pressure data. Then, calculating a pressure variation between the two selected pressure data. At last, comparing the pressure variation to a threshold. An altitude change within the specific region is confirmed as the pressure variation is greater than the threshold. On the other hand, as the pressure variation is greater than the threshold, it refers to no altitude change within the specific region.

Abstract: Pressure assisted positioning method and device thereof are disclosed in the present invention. The pressure assisted positioning device is exerted for positioning a target under the circumstance of altitude change since the target enters a specific region. The pressure assisted positioning method includes the following steps. First, confirming the entrance of the specific region of the target and detecting a plurality of pressure data. Then, calculating a pressure variation between the two selected pressure data. At last, comparing the pressure variation to a threshold. An altitude change within the specific region is confirmed as the pressure variation is greater than the threshold. On the other hand, as the pressure variation is greater than the threshold, it refers to no altitude change within the specific region.

Abstract: A structure of a probe is disclosed. The structure of the probe comprises a tube which comprises a larger end and a smaller end with a through hole disposed therewith, an axle having a supporting portion is positioned on the larger end of the tube, wherein the supporting portion comprises a fitting aperture, a pointed element fixed into the fitting aperture of the axle passes through the through hole of the tube, a positioning element positioned at a predetermined portion of the pointed element, a resilient element positioned around the axle, and a positioning cap comprising a through channel for fitting onto the axle and pressing against a juncture of the tube, wherein a smaller end of the positioning cap is formed as a positioning portion for positioning the resilient element. The pointed element is elastically slidable within the tube is used for probing.

Abstract: A method of manufacturing an insulating layer 30 (IMD layer) that has a uniform etch rate and forms improved via/contact opening profiles. The method forms a coating film 11 of silicon oxide over the chamber walls 22 of a CVD reactor. Next, the wafer 12 is loaded into the CVD reactor 20. A first insulating layer 30 composed of oxide preferably formed by a sub-atmospheric undoped silicon glass (SAUSG) using TEOS is formed over the semiconductor structure 12. Via/Contact Openings 32 are then etched in the insulating layer 30. The coating film 11 over the interior surfaces (e.g., reactor walls) 22 improves the etch rate uniformity of the first insulating layer 30. The first insulating layer 30 is preferably a inter metal dielectric (IMD) layer.