Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.

Abstract: A method for changing outputting settings for a mobile unit. The mobile unit has a user profile of a user, and the user profile contains a first data and a second data corresponding to first settings and second settings. The method includes monitoring the user's physical status to gather a third data, comparing the third data to the first data and the second data for selecting the outputting settings from the first settings and the second settings, and adjusting at least one output device of the mobile unit by the outputting settings.

Abstract: An alerting method for recharging a battery of a mobile device. The method includes collecting measured data with the mobile device, comparing the measured data with a statistic model of recharging patterns of the mobile device, determining if it is currently a suitable time for charging the battery of the mobile device according to a predetermined relation in the statistic model, and alerting a user of the mobile device to recharge the battery if it is currently a suitable time for charging the battery of the mobile device.