Abstract: An audio signal amplifying device processes an input signal to provide an output signal for a balanced headphone. The device includes a signal detection circuit, a voltage supply circuit, and an amplifying circuit. The signal detection circuit detects the variation in the input signal to generate a detection result. The voltage supply circuit outputs one of multiple voltages as a supply voltage according to the detection result; when the detection result indicates the amplitude of the input signal satisfying a first condition, the supply voltage is a first voltage; when the detection result indicates the amplitude of the input signal satisfying a second condition, the supply voltage is a second voltage lower than the first voltage; and the amplitude satisfying the first condition is greater than the amplitude satisfying the second condition. The amplifying circuit generates the output signal according to the input signal based on the supply voltage.

Abstract: A battery module includes an insulating base, a pair of electrodes and multiple battery packs. Each electrode is installed to the insulating base and has a bridge portion and a wire connecting part exposed from the insulating base, and a pair of lugs is extended smoothly from each battery pack, and an end of at least a part of the lugs is attached to each bridge portion correspondingly. Therefore, the lug is not being twisted or deformed easily, and the battery module may have good conductive efficiency, long service life, and convenience of changing the battery pack.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 ?m to 600 ?m, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.

Abstract: A method, comprising: detecting an outage of at least one functionality in a live streaming; performing an first operation toward a second user terminal; storing data of the first operation in a database of the first user terminal; and displaying an effect corresponding to the first operation during the outage. The present disclosure may store the data of operation performed by the user terminal during outage and process the operation after the outage is recovered. Therefore, the streamers and viewers may feel interested and satisfied, instead of feeling anxious, and the user experience may be enhanced.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

Abstract: The disclosure provides a wafer inspection method and wafer inspection apparatus. The method includes: receive scanning information of at least one wafer, wherein the scanning information includes a plurality of haze values; the scanning information is divided into a plurality of information blocks according to the unit block, and the feature value of each of the plurality of information blocks is calculated according to the plurality of haze values included in each of the plurality of information blocks; and converting the feature value into a color value according to the haze upper threshold and the haze lower threshold, generating the color value corresponding to the at least one wafer according to the converted color value according to the feature value, whereby the color graph displays the texture content of the at least one wafer.

Abstract: A wafer and a wafer processing method are included. The wafer processing method includes the following steps. A wafer is provided having a first surface and a second surface opposite to the first surface. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, and a second portion of the first surface is exposed by the fixture pattern. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and the second surface of the wafer is ground.

Abstract: Provided is a wafer jig including a bottom wall and a ring-shaped side wall. The bottom wall has a supporting surface. The ring-shaped side wall is connected to a periphery of the bottom wall. The ring-shaped side wall includes at least two step portions. The two step portions include a first step portion and a second step portion. The first step portion is connected between the supporting surface and the second step portion, and the first step portion protrudes along a direction toward a center of the bottom wall. The ring-shaped side wall surrounds the center. In addition, a wafer structure and a wafer processing method are also provided.

Abstract: A method for identifying a wafer is provided, which includes the following steps. A marked frame is obtained from a wafer inspection picture. A gray scale index corresponding to the marked frame is calculated based on a gray scale value corresponding to each of multiple pixels included in the marked frame. The gray scale index indicates a proportion of pixels whose gray scale values are greater than a specified value. Whether a trace pattern in the marked frame is a scratch or a grain boundary is determined based on the gray scale index.

Abstract: A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

Abstract: The disclosure provides a wafer inspection method and wafer inspection apparatus. The method includes: receive scanning information of at least one wafer, wherein the scanning information includes a plurality of haze values; the scanning information is divided into a plurality of information blocks according to the unit block, and the feature value of each the plurality of information blocks is calculated according to the plurality of haze values included in each the plurality of information blocks; and converting the feature value into a color value according to the haze upper threshold and the haze lower threshold, and generating the color value corresponding to the at least one wafer according to the converted color value according to the feature value, the color graph displays the texture content of the at least one wafer.

Abstract: A wafer surface defect inspection method and a wafer surface defect inspection apparatus are provided. The method includes the following steps. Scanning information of a wafer is received, and the scanning information includes multiple scanning parameters. At least one reference point of the scanning information is determined, and path information is generated according to the at least one reference point and a reference value. Multiple first scanning parameters corresponding to the path information in the scanning parameters are obtained according to the path information to generate a curve chart. According to the curve chart, it is determined whether the wafer has a defect, and a defect type of the defect is determined.

Abstract: A device is provided that includes a plurality of signal processing paths coupled in parallel, an adding circuit and an amplifier circuit. The number of the signal processing paths is N and each of the signal processing paths receives a same input signal to generate an output analog signal after a signal processing is performed, wherein each of the signal processing paths at least includes a DAC circuit and the signal processing at least includes a digital to analog conversion corresponding to the DAC circuit. The adding circuit adds the output analog signal generated from each of the signal processing paths to generate a total output analog signal. The amplifier circuit receives the total output analog signal to adjust a signal intensity of the total output analog signal according to a gain to generate an output audio signal, wherein the gain is 1/N.

Abstract: A device is provided that includes a plurality of signal processing paths coupled in parallel, an adding circuit and an amplifier circuit. The number of the signal processing paths is N and each of the signal processing paths receives a same input signal to generate an output analog signal after a signal processing is performed, wherein each of the signal processing paths at least includes a DAC circuit and the signal processing at least includes a digital to analog conversion corresponding to the DAC circuit. The adding circuit adds the output analog signal generated from each of the signal processing paths to generate a total output analog signal. The amplifier circuit receives the total output analog signal to adjust a signal intensity of the total output analog signal according to a gain to generate an output audio signal, wherein the gain is 1/N.

Abstract: A circuit including a switch and a level shift circuit is provided. The switch includes a control terminal and an input terminal. The input terminal is arranged to receive an input voltage, and the control terminal is arranged to receive a control voltage that controls a state of the switch. The level shift circuit includes a level-shifting input terminal and a level-shifting output terminal. The level-shifting input terminal is coupled to the input terminal for receiving the input voltage, and the level shift circuit is arranged to shift the input voltage to generate a shifted voltage on the level-shifting output terminal, and the control voltage is generated based on the shifted voltage.

Abstract: In an exemplary flat display apparatus and control circuit and method for controlling the flat display apparatus, the flat display apparatus includes a plurality of gate driving units, each of which controls the operation of a scan line in the flat display apparatus. The flat display apparatus provides a first gate high level voltage signal and a second gate high level voltage signal to the gate driving units such that the first and second gate high level voltage signals are used as voltage signals transmitted to corresponding scan lines. The first and second gate high level voltage signals respectively include a falling edge with a slope. Duration time of the falling edge of the first gate high level voltage signal is longer than that of the falling edge of the second gate high level voltage signal.

Abstract: A combo-plug detecting circuit for use in an audio CODEC is provided. The combo-plug detecting circuit is used to determine the contact configuration of the audio plug, to ensure that the audio plug belonging to the differential structure can be compatible with the audio CODEC.