Patents by Inventor Chia-Chien Kuang

Chia-Chien Kuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230027676
    Abstract: The present disclosure describes a semiconductor device with substantially uniform gate regions and a method for forming the same. The method includes forming a fin structure on a substrate, the fin structure including one or more nanostructures. The method further includes removing a portion of the fin structure to expose an end of the one or more nanostructures and etching the end of the one or more nanostructures with one or more etching cycles. Each etching cycle includes purging the fin structure with hydrogen fluoride (HF), etching the end of the one or more nanostructures with a gas mixture of fluorine (F2) and HF, and removing an exhaust gas mixture including an etching byproduct. The method further includes forming an inner spacer in the etched end of the one or more nanostructures.
    Type: Application
    Filed: March 8, 2022
    Publication date: January 26, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Chien Kuang, Wei-Lun Chen, Tze-Chung Lin, Li-Te Lin