Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.

Abstract: Disclosed is a wireless transmission system, including a mobile electronic device with first screen information, a computer with second screen information, and a docking station coupled to the computer. When accommodating the mobile electronic device, the docking station transmits an electrical signal to the mobile electronic device, wherein the computer confirms that the mobile electronic device is located on the docking station according to a Bluetooth Low Energy signal sent by the mobile electronic device, the computer transmits Wi-Fi service set identification information to the mobile electronic device through a Bluetooth Low Energy protocol, the computer and the mobile electronic device are connected to the same Wi-Fi access point, and the mobile electronic device sends the first screen information back to the computer. Accordingly, the problem that the computer and the mobile electronic device cannot transmit data or screen information to each other through a transmission line is solved.

Abstract: A frequency mixing circuit includes: a first transistor and a second transistor. The first transistor has a control terminal, a first terminal and a second terminal. The control terminal of the first transistor is configured to receive an oscillation signal, the first terminal of the first transistor is configured to output a mixed signal, and the second terminal of the first transistor is configured to receive a source signal. The second transistor has a control terminal, a first terminal and a second terminal. The control terminal of the second transistor is coupled to the second terminal of the first transistor, the first terminal of the second transistor is coupled to the first terminal of the first transistor, and the second terminal of the second transistor is coupled to the control terminal of the first transistor.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: A memory device includes a plurality of arrays coupled in parallel with each other. A first array of the plurality of arrays includes a first switch and a plurality of first memory cells that are arranged in a first column, a second switch and a plurality of second memory cells that are arranged in a second column, and at least one data line coupled to the plurality of first memory cells and the plurality of second memory cells. The second switch is configured to output a data signal from the at least one data line to a sense amplifier.

Abstract: Techniques and mechanisms for storing data with a memory cell which comprises a ferroelectric (FE) resistive junction. In an embodiment, a memory cell comprises a transistor and a FE resistive junction structure which is coupled to the transistor. The FE resistive junction structure comprises electrode structures, and a layer of a material which is between said electrode structures, wherein the material is a FE oxide or a FE semiconductor. The FE resistive junction structure selectively provides any of various levels of resistance, each to represent a respective one or more bits. A current flow through the FE resistive junction structure is characterized by thermionic emission through a Schottky barrier at an interface with one of the electrode structures. In another embodiment, the FE resistive junction structure further comprises one or more dielectric layers each between the layer of material and a different respective one of the electrode structures.

Abstract: Techniques and mechanisms for operating a ferroelectric (FE) circuit element as a cell of a crossbar memory array. In an embodiment, the crossbar memory array comprises a bit line, a word line, and a data storage cell which includes a circuit element that extends to each of the bit line and the word line. The data storage cell is a FE circuit element which comprises terminals, each at a different respective one of the bit line or the word line, and one or more material layers between said terminals. One such layer comprises a FE nitride or a FE oxide. The FE circuit element is operable to selectively enable, or disable, operation as a diode. In another embodiment, the memory array is coupled to circuitry which corresponds a given mode of operation of the FE circuit element to a particular data bit value.

Abstract: An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. The backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.

Abstract: A substrate assembly is provided, including a first substrate, an active element layer, a plurality of first electrodes, a circuit substrate, and a plurality of second electrodes. The active element layer is disposed on the first substrate. The plurality of first electrodes are disposed on the first substrate and arranged along a first direction. The circuit substrate is partially overlapping the first substrate in a vertical projection direction. The plurality of second electrodes are disposed on the circuit substrate. A distance between the edge of one of the plurality of second electrodes and the edge of one of the plurality of first electrodes is greater than zero in the first direction, and a width of the one of the plurality of first electrodes is different from a width of the one of the plurality of second electrodes.

Abstract: Provided is a method for screening a modulator of a viral infection by detecting an interaction of angiotensin converting enzyme 2 (ACE2) and a spike protein with a biosensing platform. Also provided is a compound of formula (I) as a modulator of a viral infection, where R, X, A, R3 to R5, and m are as defined herein, and a method for protecting a subject from a viral infection by administering with the compound.

Abstract: Provided are methods and compositions for the diagnosis and treatment of COVID-19, a disease caused by SARS-CoV-2 infection. More specifically, peptides that bind to SARS-CoV-2 are provided for use as diagnostic and therapeutic compositions in diagnosis, treatment and prevention of individuals contracting, or in danger of contracting COVID-19.

Abstract: The present invention provides a carboxylated nanodiamond-mediated CRISPR-Cas9 delivery system for gene editing comprising nanodiamond (ND) particles as the carriers of CRISPR-Cas9 components designed to introduce the mutation in a given gene for repairing a tissue damage.

Abstract: The present invention provides a method for preparing a reconstituted apolipoprotein B lipoparticle and the method comprises steps of (a) dissolving an apolipoprotein B and a lipid in a first buffer containing 2 M to 8 M urea and 1 wt % to 15 wt % amphiphilic compounds to form a mixture; and (b) dialyzing the mixture against a second buffer containing 0 M to 2M urea and 0 wt % to 0.5 wt % amphiphilic compounds for 1 to several times for lowering concentrations of the urea and the amphiphilic compounds in the mixture. The present invention further provides an apolipoprotein B lipoparticle and a use for the production of an apolipoprotein B lipoparticle used for delivering a hydrophobic substance.

Abstract: An optical coupling structure and an optical communication apparatus using the same are provided. The optical coupling structure includes a light incident portion, a light splitting portion, a first light emitting portion, and a second light emitting portion. An initial optical signal entering the optical coupling structure through the light incident portion is divided into a first beam and second beam by the light splitting portion, which includes a first reflective surface and a second reflective surface, and the slopes of the first and second reflective surfaces are both positive or both negative. The first beam is converted by the first light emitting portion into a first optical signal for transmitting to an optical transmission unit. The second beam is converted by the second light emitting portion into a second optical signal for transmitting to a photodetector.

Abstract: A thin optical imaging module of a biometric apparatus includes a first glass substrate, a first optical prism film, a second optical prism film, and an image sensor. The first glass substrate further includes a fingerprint imaging area, a vein imaging area, a contact surface, a reflective interface, and an attaching surface. The first optical prism film adhered to the attaching surface is located under the fingerprint imaging area. The second optical prism film is adhered to a position under the first optical prism film. The image sensor disposed in correspondence to the first glass substrate is located under the attaching surface.

Abstract: A biometric authentication device uses IR-VCSELs as light sources for performing biometric authentication by providing clear images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather a vein image and a fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data.

Abstract: The present invention provides a method for preparing a reconstituted apolipoprotein B lipoparticle and the method comprises steps of (a) dissolving an apolipoprotein B and a lipid in a first buffer containing 2 M to 8 M urea and 1 wt % to 15 wt % amphiphilic compounds to form a mixture; and (b) dialyzing the mixture against a second buffer containing 0 M to 2M urea and 0 wt % to 0.5 wt % amphiphilic compounds for 1 to several times for lowering concentrations of the urea and the amphiphilic compounds in the mixture. The present invention further provides an apolipoprotein B lipoparticle and a use for the production of an apolipoprotein B lipoparticle used for delivering a hydrophobic substance.

Abstract: A thin optical imaging module of a biometric apparatus includes a first glass substrate, a first optical prism film, a second optical prism film, and an image sensor. The first glass substrate further includes a fingerprint imaging area, a vein imaging area, a contact surface, a reflective interface, and an attaching surface. The first optical prism film adhered to the attaching surface is located under the fingerprint imaging area. The second optical prism film is adhered to a position under the first optical prism film. The image sensor disposed in correspondence to the first glass substrate is located under the attaching surface.

Abstract: A biometric authentication device uses IR-VCSELs as light sources for performing a better biometric authentication by providing clearer images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather the vein image and the fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data. Therefore, the biometric authentication device can achieve an approach in lowering hardware costs, simplifying circuit designs and providing an outstanding performance.

Abstract: A biometric authentication device uses IR-VCSELs as light sources for performing a better biometric authentication by providing clearer images. A light guide module is introduced to minimize the size of the device. Moreover, the biometric authentication device uses a single image sensing module to gather the vein image and the fingerprint image into the same detection signal which is then analyzed and compared with the pre-stored vein feature data and fingerprint feature data. Therefore, the biometric authentication device can achieve an approach in lowering hardware costs, simplifying circuit designs and providing an outstanding performance.