Abstract: A stacked package structure and a manufacturing method thereof are provided. The stacked package structure includes an upper redistribution layer, a first chip, and an upper molding layer. The first chip is disposed on the upper redistribution layer and is electrically connected to the upper redistribution layer. The upper molding layer is disposed on the first chip and the upper redistribution layer, and is configured to package the first chip. The upper molding layer includes a recess, the recess is recessed relative to a surface of the upper molding layer away from the upper redistribution layer, and the recess is circumferentially formed around a periphery of the upper molding layer.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.

Abstract: A device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, source/drain structures over the substrate and on opposite sides of the gate structure, and a self-assemble monolayer (SAM) in contact with an inner sidewall of one of the gate spacer and in contact with a top surface of the gate structure.

Abstract: A method of correcting assist features includes the following steps. At first, a first layout pattern is received by a computer system, and the first layout pattern is split into a plurality of first regions. Subsequently, a plurality of assist features are added into the first layout pattern to form a second layout pattern, wherein at least one of the assist features neighboring any one of the edges of the first regions is defined as a selected pattern. Then, the second layout pattern is split into a plurality of second regions. Afterwards, a check step is performed on the second region including the selected pattern, and the second layout pattern is corrected to form a corrected second layout pattern.

Abstract: A method of correcting assist features includes the following steps. At first, a first layout pattern is received by a computer system, and the first layout pattern is split into a plurality of first regions. Subsequently, a plurality of assist features are added into the first layout pattern to form a second layout pattern, wherein at least one of the assist features neighboring any one of the edges of the first regions is defined as a selected pattern. Then, the second layout pattern is split into a plurality of second regions. Afterwards, a check step is performed on the second region including the selected pattern, and the second layout pattern is corrected to form a corrected second layout pattern.