Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.

Abstract: A vehicle lighting control circuit box is provided, including a case member, a circuit unit, at least one cover member and a positioning assembly. The case member is a metal member and extends along a longitudinal direction, the case member defines a receiving space, and two ends of the case member on the longitudinal direction respectively have an opening communicating with the receiving space. The circuit unit is received in the receiving space. Each of the at least one cover member covers one of the two openings. The positioning assembly is disposed on the case member to position the circuit unit within the receiving space to make the circuit unit contact with the case member.

Abstract: A motor vehicle circuit protection device configured to be electrically connected with a power end and a load end is provided, including: a voltage pre-stabilizing unit, set with a maximum voltage value; and a trickle discharge unit, electrically connected with the voltage pre-stabilizing unit, the trickle discharge unit being configured to absorb, obviate or eliminate trickle current from the load end. A motor vehicle circuit includes the motor vehicle circuit protection device is provided, further including the power end and the load end.

Abstract: A vehicle lighting control circuit box is provided, including a case member, a circuit unit, at least one cover member and a positioning assembly. The case member is a metal member and extends along a longitudinal direction, the case member defines a receiving space, and two ends of the case member on the longitudinal direction respectively have an opening communicating with the receiving space. The circuit unit is received in the receiving space. Each of the at least one cover member covers one of the two openings. The positioning assembly is disposed on the case member to position the circuit unit within the receiving space to make the circuit unit contact with the case member.

Abstract: A coffee lubricant having nanoparticles is provided. It consists of 36 to 40 wt % of glycerin, 1 to 7 wt % of gum arabic, 0.3 to 1.3 wt % of nanoparticles, and remaining part of coffee biofuel. In which, the nanoparticles are CuO. The coffee biofuel is extracted from coffee dregs and has a viscosity of 60 to 70 cSt at a temperature of 40 degrees Celsius. It can reduce the friction coefficient and operating temperature. In addition, it can replace the mineral oil.

Abstract: A coffee lubricant having nanoparticles is provided. It consists of 36 to 40 wt % of glycerin, 1 to 7 wt % of gum arabic, 0.3 to 1.3 wt % of nanoparticles, and remaining part of coffee biofuel. In which, the nanoparticles are CuO. The coffee biofuel is extracted from coffee dregs and has a viscosity of 60 to 70 cSt at a temperature of 40 degrees Celsius. It can reduce the friction coefficient and operating temperature. In addition, it can replace the mineral oil.

Abstract: A gas sensor is revealed, and the gas sensor comprises a sapphire substrate. An epitaxial oxide sensing layer is disposed on the sapphire substrate and formed by a thin film of single-crystalline gallium oxide series grown by using metal-organic chemical vapor deposition. The material of epitaxial oxide sensing layer include oxygen, gallium, and zinc. Two electrodes are disposed on a portion of the epitaxial oxide sensing layer. When the epitaxial oxide sensing layer senses a gas, a current will be generated and change the resistance. The two electrodes thereon receive the resistance. According to the change of the resistance, the concentration of the gas can be deduced. A heating element is further disposed below the sapphire substrate for providing the temperature required for sensing.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.