Abstract: A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.

Abstract: A golf teaching method and a golf teaching system are provided. The golf teaching method includes: configuring image capturing devices and golf simulator to capture swing images and corresponding simulator data records, when a user performs a golf swing; configuring an expert model that includes expert motion information and corresponding correction suggestion information; configuring a computing device to perform an analysis process on the swing images and the simulator data records to divide the golf swing into user motions according to stages and obtaining records of user motion information corresponding to the plurality of stages, and to compare the user motion information with the corresponding expert motion information in each stage through the expert model, and to provide the corresponding correction suggestion information according to a comparison result; and configuring a user interface to provide the correction suggestion information.

Abstract: A development system and a method of an offline software-in-the-loop simulation are disclosed. A common firmware architecture generates a chip control program. The common firmware architecture has an application layer and a hardware abstraction layer. The application layer has a configuration header file and a product program. A processing program required by a peripheral module is added to the hardware abstraction layer during compiling. The chip control program is provided to a controller chip or a circuit simulation software to be executed to control the product-related circuit through controlling the peripheral module.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Abstract: A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 ?m to 600 ?m, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.

Abstract: The present invention relates to a method for treprostinil diethanolamine synthesis. The present invention also relates to a novel intermediate used in the method for treprostinil diethanolamine synthesis. The novel intermediate is shown in the following formula (II): wherein R1 and R2 are described in the description.

Abstract: The present invention relates to a method for treprostinil diethanolamine synthesis. The present invention also relates to a novel intermediate used in the method for treprostinil diethanolamine synthesis. The novel intermediate is shown in the following formula (II): wherein R1 and R2 are described in the description.

Abstract: The present invention discloses a method of purification of prostaglandins including fluorine atoms by using preparative HPLC. Tafluprost and Travoprost are prostaglandins including fluorine. The chemical structure of the impurities in crude Tafluprost and crude Travoprost also contain fluorine, therefore, the removal of the impurities is difficult. Purification by using preparative high performance liquid chromatography (HPLC) can achieve high-quality liquid bulk drugs.

Abstract: The present invention provides a novel anhydride derivative of 2-(S)-(6-methoxy-2-naphtyl)-propanoic acid for preparing nitrooxyalkyl esters of 2-(S)-(6-methoxy-2-naphtyl)-propanoic acid with high purity to meet requirements of the industry.

Abstract: The present invention provides a novel anhydride derivative of 2-(S)-(6-methoxy-2-naphtyl)-propanoic acid for preparing nitrooxyalkyl esters of 2-(S)-(6-methoxy-2-naphtyl)-propanoic acid with high purity to meet requirements of the industry.