Patents by Inventor Chia-Dar Hsieh

Chia-Dar Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050110057
    Abstract: A gate structure is disclosed with improved endurance characteristics. Source and drain regions are contained within a semiconductor region of a substrate. At least a gate stack, which is disposed over the semiconductor region, is situated between the source and drain regions. The gate stack contains a gate insulator layer formed over the semiconductor region, a conductive gate layer disposed over the gate insulator layer, a top gate stack layer disposed over the conductive gate layer. A sidewall insulator layer is disposed over sidewalls of the gate stack. Nitrogen atoms are incorporated along the conductive gate layer sidewall-sidewall insulator layer interface and along the conductive gate layer-gate insulator layer interface in the vicinity of the conductive gate layer edge.
    Type: Application
    Filed: November 21, 2003
    Publication date: May 26, 2005
    Inventors: Shih Wang, Chia-Dar Hsieh
  • Patent number: 5776832
    Abstract: A method for anti-corrosion etching of metal interconnections, comprised in part of an aluminum layer, is achieved. The metal lines form self-aligned contacts (SAC) in contact openings in a polysilicon/metal dielectric (PMD) layer to a patterned underlying polysilicon layer. The method involves performing an oxygen ashing step in the same etching chamber immediately after etching the aluminum lines in a halogen gas, such as BCl.sub.3 and Cl.sub.2. This method using oxygen ashing avoids the use of the more traditional passivation gases CHF.sub.3 and CF.sub.4 which can overetch the polysilicon exposed in the SAC process that would cause electrical opens. And further, it avoids the formation of a polymer residue which is difficult to remove. The oxygen treatment reduces the Cl.sub.2 on the sidewalls of the Al lines, and also removes portions of the photoresist mask material containing Cl.sub.2. It is also easier to remove the remaining photoresist in a solvent stripping process.
    Type: Grant
    Filed: July 17, 1996
    Date of Patent: July 7, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Chia-Dar Hsieh, Yun-Hung Shen, Sheng-Liang Pan, Jen Song Liu