Patents by Inventor Chia Feng

Chia Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240189243
    Abstract: A lipid compound or a derivative thereof and a pharmaceutical composition employing the same are provided. The lipid compound has a structure represented by Formula (I): wherein Z1, Z2, Z3 and Z4 are as disclosed in the specification.
    Type: Application
    Filed: November 13, 2023
    Publication date: June 13, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Felice Cheng, Ping-Fu Cheng, Jenn-Tsang Hwang, Chih-Wei Fu, Ku-Feng Lin, Ya-Ling Chiu, Jheng-Sian Li, Kang-Li Wang, Siou-Han Chang, Chia-Yu Fan
  • Publication number: 20240193940
    Abstract: An augmented reality operating procedure judgment system is provided. The augmented reality operating procedure judgment system includes an augmented reality device and a processor. The augmented reality device receives a plurality of real-time images. The processor accesses an inference model stored in a storage device. The processor judges a standard operating procedure (SOP) result corresponding to the plurality of real-time images through the inference model. The augmented reality device displays the standard operating procedure result on one of the plurality of real-time images. Therefore, the effect of judging whether an operator is following the standard operating procedure may be achieved.
    Type: Application
    Filed: March 29, 2023
    Publication date: June 13, 2024
    Inventors: Jia-Hong ZHANG, Yi-Yun HSIEH, Shih-Wei WANG, Chia-Feng KUO
  • Patent number: 12009258
    Abstract: An integrated circuit structure includes a first Inter-Layer Dielectric (ILD), a gate stack in the first ILD, a second ILD over the first ILD, a contact plug in the second ILD, and a dielectric protection layer on opposite sides of, and in contact with, the contact plug. The contact plug and the dielectric protection layer are in the second ILD. A dielectric capping layer is over and in contact with the contact plug.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Chan Yen, Ching-Feng Fu, Chia-Ying Lee
  • Patent number: 12009313
    Abstract: A selective EMI shielding structure for a semiconductor package and a method of fabrication thereof is disclosed. The semiconductor package, comprising: a substrate having a first face; at least one first electronic component mounted adjacent to a first region of the first face; a least one second electronic component mounted adjacent to a second region of the first face; and an encapsulant disposed over the first and the second electronic components, wherein the encapsulant covers directly over the first electronic component, and wherein the encapsulant covers the second electronic component through a layer of conductive material.
    Type: Grant
    Filed: October 1, 2021
    Date of Patent: June 11, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Meng-Jen Wang, Chien-Yuan Tseng, Hung Chen Kuo, Ying-Hao Wei, Chia-Feng Hsu, Yuan-Long Chiao
  • Patent number: 12002710
    Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: June 4, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hsin Chan, Jiing-Feng Yang, Kuan-Wei Huang, Meng-Shu Lin, Yu-Yu Chen, Chia-Wei Wu, Chang-Wen Chen, Wei-Hao Lin, Ching-Yu Chang
  • Publication number: 20240179834
    Abstract: A decorative flexible-electronic-film structure includes a mechanical member and a flexible electronic molded film. The mechanical member includes a mainboard part and a curved clamping part, and an accommodating slot is formed on the mainboard part. The flexible electronic molded film includes a body part, a side hook part and an electronic component, an inner surface of the body part faces the mainboard part, the electronic component is disposed on the inner surface and corresponds to the accommodating slot, and the side hook part is formed on the periphery of the body part and is curved. The flexible electronic molded film is assembled onto the mechanical member, with the body part overlapping the mainboard part, the electronic component being accommodated in the accommodating slot, and the side hook part being buckled to the clamping part. A method of forming the decorative flexible-electronic-film structure is also provided.
    Type: Application
    Filed: March 27, 2023
    Publication date: May 30, 2024
    Inventors: Hsuan Yao, Yi Feng Chen, Chia Tsun Huang, Keng-Kuei Liang
  • Patent number: 11996439
    Abstract: A method of manufacturing a capacitor including the operations of etching a plurality of primary trenches into a first region of a substrate, the primary trenches extending in a first direction, etching a plurality of secondary trenches into the first region of the substrate, the secondary trenches extending in a second direction other than the first direction, with the adjacent secondary trenches and adjacent primary trenches jointly defining an island structure having an upper surface that is recessed relative to an upper surface a surrounding substrate, and depositing a series of film pairs including a dielectric layer and a conductive layer.
    Type: Grant
    Filed: May 9, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Feng Kuo, Chung-Chuan Tseng, Chia-Ping Lai
  • Patent number: 11996323
    Abstract: A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Chung-Hao Chu, Ching-Yu Yang
  • Patent number: 11990474
    Abstract: A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.
    Type: Grant
    Filed: January 9, 2023
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu Fang Fu, Chi-Feng Huang, Chia-Chung Chen, Victor Chiang Liang, Fu-Huan Tsai
  • Patent number: 11990518
    Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: May 21, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Hua Chang, Jian-Feng Li, Hsiang-Chieh Yen
  • Publication number: 20240162038
    Abstract: A photomask structure including a first layout pattern and a second layout pattern is provided. The second layout pattern is located on one side of the first layout pattern. The first layout pattern and the second layout pattern are separated from each other. The first layout pattern has a first edge and a second edge opposite to each other. The second layout pattern has a third edge and a fourth edge opposite to each other. The third edge of the second layout pattern is adjacent to the first edge of the first layout pattern. The second layout pattern includes a first extension portion exceeding an end of the first layout pattern. The first extension portion includes a first protruding portion protruding from the third edge of the second layout pattern. The first protruding portion exceeds the first edge of the first layout pattern.
    Type: Application
    Filed: February 10, 2023
    Publication date: May 16, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Chien Heng Liu, Chia-Wei Huang, Yung-Feng Cheng, Ming-Jui Chen
  • Publication number: 20240162903
    Abstract: An electronic switch device and an electronic switch system are provided, wherein the electronic switch system includes: an electronic switch device, which includes: a sensing module, which includes: a pressure sensing module for providing a pressure sensing signal; and a touch control sensing module disposed on the pressure sensing module for providing a touch control sensing signal; and a comparator circuit coupled to the sensing module for receiving the pressure sensing signal.
    Type: Application
    Filed: March 30, 2023
    Publication date: May 16, 2024
    Inventors: Chia-Tsun Huang, Keng-Kuei Liang, chih-hung Liu, Yi-Feng Chen
  • Patent number: 11973113
    Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Chung-Hao Chu
  • Patent number: 11961546
    Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Fu Lee, Hon-Jarn Lin, Po-Hao Lee, Ku-Feng Lin, Yi-Chun Shih, Yu-Der Chih
  • Patent number: 11955389
    Abstract: A method of determining the reliability of a high-voltage PMOS (HVPMOS) device includes determining a bulk resistance of the HVPMOS device, and evaluating the reliability of the HVPMOS device based on the bulk resistance.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Tse-Hua Lu
  • Publication number: 20240114619
    Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.
    Type: Application
    Filed: December 2, 2022
    Publication date: April 4, 2024
    Applicant: InnoLux Corporation
    Inventors: Cheng-Chi WANG, Chin-Ming HUANG, Chien-Feng LI, Chia-Lin YANG
  • Patent number: 11937932
    Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: March 26, 2024
    Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITY
    Inventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
  • Patent number: 11936299
    Abstract: A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region. The transistor further includes a source/drain (S/D) in the substrate adjacent to the gate structure. The transistor further includes a lightly doped drain (LDD) region adjacent to the S/D, wherein a dopant concentration in the first LDD is less than a dopant concentration in the S/D. The transistor further includes a doping extension region adjacent the LDD region, wherein the doping extension region extends farther under the gate structure than the LDD region, and a maximum depth of the doping extension region is 10-times to 30-times greater than a maximum depth of the LDD.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chu Fu Chen, Chi-Feng Huang, Chia-Chung Chen, Chin-Lung Chen, Victor Chiang Liang, Chia-Cheng Pao
  • Publication number: 20240086692
    Abstract: A semiconductor device may include a non-volatile memory cell structure that may be formed in a back end region of a semiconductor device. The non-volatile memory cell structure may include a floating gate structure in which a portion of a dielectric layer is included between a gate structure and a word line conductive structure. The separation of the gate structure and the word line conductive structure by the dielectric layer results in the gate structure being a floating gate structure. This enables a charge to be selectively stored on the gate structure, even when power is removed from the word line conductive structure. The non-volatile memory cell structure along with a volatile memory cell structure are provided in the back end region of the semiconductor device, such that caching and long-term storage may be performed in the back end region of the semiconductor device.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 14, 2024
    Inventors: Yun-Feng KAO, Katherine H. CHIANG, Chia Yu LING
  • Publication number: 20240088074
    Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a metal feature in a dielectric layer, a passivation structure over the dielectric layer and the metal feature, a contact pad over the passivation structure, and a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad.
    Type: Application
    Filed: March 15, 2023
    Publication date: March 14, 2024
    Inventors: Chia-Feng Cheng, Kang-Yi Lien, Chia-Ping Lai