Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a metal feature in a dielectric layer, a passivation structure over the dielectric layer and the metal feature, a contact pad over the passivation structure, and a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad.

Abstract: Systems, methods, circuits, devices, and apparatus including computer-readable mediums for managing tamper detections in secure memory devices. In one aspect, a secure memory device includes: a memory cell array, one or more tamper detectors each configured to detect a respective type of tamper event on at least part of the secure memory device, and a tamper detection status register storing one or more values each indicating a tamper detection status detected by a corresponding tamper detector. The secure memory device can include a command interface coupled to the tamper detection status register and configured to output the values stored in the tamper detection status register when receiving a trigger. The secure memory device can also include an output pin coupled to the tamper detection status register and be configured to automatically output the values stored in the tamper detection status register via the output pin.

Abstract: A memory device includes an error code generator, one or more first pins coupled to an external data bus, and one or more second pins coupled to an external system interface. The one or more first pins output data chunks to the data bus during a period of memory operation; and the error code generator is configured to transmit a status code via the one or more second pins during the period of memory operation. The status code indicates at least one of an error was detected, an error was detected and corrected, or an error was detected and not corrected.

Abstract: Systems, methods, circuits, devices, and apparatus including computer-readable mediums for managing tamper detections in secure memory devices. In one aspect, a secure memory device includes: a memory cell array, one or more tamper detectors each configured to detect a respective type of tamper event on at least part of the secure memory device, and a tamper detection status register storing one or more values each indicating a tamper detection status detected by a corresponding tamper detector. The secure memory device can include a command interface coupled to the tamper detection status register and configured to output the values stored in the tamper detection status register when receiving a trigger. The secure memory device can also include an output pin coupled to the tamper detection status register and be configured to automatically output the values stored in the tamper detection status register via the output pin.

Abstract: An integrated circuit comprising a memory array configured to store data chunks with corresponding error correction codes and error correction logic includes control logic that executes a recovery procedure to access a selected data chunk and corresponding error correction code from the memory array, to utilize the error correction logic to identify a location in the memory array of an error bit in the selected data chunk, and to access the identified location to write the corrected data. The recovery procedure is sequentially applied to a plurality of data chunks over a recovery operation region designated for a given instance of the recovery operation. Memory coupled with the control logic can store one or more recovery parameters that identify the recovery operation region in the memory.

Abstract: A server system may include a plurality of internal hubs communicatively coupled to a plurality of server nodes. The plurality of internal hubs may communicate with an external hub to transmit broadcast traffic to reach a designated server node. A hub controller, a routing device coupled to the plurality of internal hubs, may select an internal hub from among a plurality of internal hubs based on a link status and a set of hub selection rules. Based on a status of active link and a relative priority of internal hubs, an internal hub is selected as a transmission channel to receive broadcast traffic from the external hub and direct the broadcast traffic to a corresponding server node.

Abstract: An integrated circuit comprising a memory array configured to store data chunks with corresponding error correction codes and error correction logic includes control logic that executes a recovery procedure to access a selected data chunk and corresponding error correction code from the memory array, to utilize the error correction logic to identify a location in the memory array of an error bit in the selected data chunk, and to access the identified location to write the corrected data. The recovery procedure is sequentially applied to a plurality of data chunks over a recovery operation region designated for a given instance of the recovery operation. Memory coupled with the control logic can store one or more recovery parameters that identify the recovery operation region in the memory.

Abstract: A memory device includes an error code generator, one or more first pins coupled to an external data bus, and one or more second pins coupled to an external system interface. The one or more first pins output data chunks to the data bus during a period of memory operation; and the error code generator is configured to transmit a status code via the one or more second pins during the period of memory operation. The status code indicates at least one of an error was detected, an error was detected and corrected, or an error was detected and not corrected.

Abstract: A method for monitoring data error status of a memory device includes generating, by a memory controller, a data status indication code indicating error status of a data chunk transmitted by the memory controller and outputting, by the memory controller, the data status indication code to a user interface.

Abstract: An apparatus having a first interface of a first type supporting a plurality of data ports, a second interface of a second type supporting at least a portion of the plurality data ports, and a third interface of the second type. The apparatus also including a switching module coupled to a control port of the first interface and configured for selectably coupling the plurality of data ports to at least one of the second interface and the third interface based on a signal at the control port.

Abstract: A system for switching between a high performance mode and dual path mode is disclosed. The system includes a first device, a second device, a third device, and a switch configured to receive control signals, and in response causing the switch to selectively couple one or more first lanes of the first device or one or more second lanes of the second device to third lanes of the third device to yield enabled lanes. The system also include a number of the enabled lanes is less than or equal to a number of the third lanes, and the switch is configured to route the enabled lanes associated with the first device to a first portion of the third lanes in an increasing order and to route the enabled lanes associated with the second device to a second portion of the third lanes in a decreasing order.

Abstract: An apparatus having a first interface of a first type supporting a plurality of data ports, a second interface of a second type supporting at least a portion of the plurality data ports, and a third interface of the second type. The apparatus also including a switching module coupled to a control port of the first interface and configured for selectably coupling the plurality of data ports to at least one of the second interface and the third interface based on a signal at the control port.

Abstract: In accordance with the disclosure, there is provided a memory device configured to implement an error detection protocol. The memory device includes a memory array and a first input for receiving a control signal corresponding to a command cycle. The memory device also includes a second input for receiving an access control signal during a command cycle and for receiving an error detection signal during the command cycle, wherein the error detection signal includes information corresponding to the access control signal. The memory device further includes control logic configured to verify the correctness of the access control signal by a comparison with the error detection signal and perform an operation on the memory array during the command cycle when the correctness of the access control signal is verified.

Abstract: A server system may include a plurality of internal hubs communicatively coupled to a plurality of server nodes. The plurality of internal hubs may communicate with an external hub to transmit broadcast traffic to reach a designated server node. A hub controller, a routing device coupled to the plurality of internal hubs, may select an internal hub from among a plurality of internal hubs based on a link status and a set of hub selection rules. Based on a status of active link and a relative priority of internal hubs, an internal hub is selected as a transmission channel to receive broadcast traffic from the external hub and direct the broadcast traffic to a corresponding server node.

Abstract: A system for switching between a high performance mode and dual path mode is disclosed. The system includes a first device, a second device, a third device, and a switch configured to receive control signals, and in response causing the switch to selectively couple one or more first lanes of the first device or one or more second lanes of the second device to third lanes of the third device to yield enabled lanes. The system also include a number of the enabled lanes is less than or equal to a number of the third lanes, and the switch is configured to route the enabled lanes associated with the first device to a first portion of the third lanes in an increasing order and to route the enabled lanes associated with the second device to a second portion of the third lanes in a decreasing order.

Abstract: An electronic circuit includes a forward delay circuit having a plurality of first stages. Each of the first stages is configured to introduce a delay time, the delay times of the first stages being varied. The electronic circuit further includes a control circuit coupled to the forward delay circuit, and a backward delay circuit coupled to the control circuit and having a plurality of second stages. Each of the second stages is configured to introduce a delay time, the delay times of the second stages being varied.

Abstract: An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.

Abstract: A method for outputting data error status of a memory device includes generating data status indication codes indicating error status of data chunks transmitted by a memory controller, and combining the data status indication codes with corresponding data chunks to generate an output signal, and outputting the output signal to a data bus pin.

Abstract: An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.

Abstract: An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.