Abstract: A semiconductor device may include a non-volatile memory cell structure that may be formed in a back end region of a semiconductor device. The non-volatile memory cell structure may include a floating gate structure in which a portion of a dielectric layer is included between a gate structure and a word line conductive structure. The separation of the gate structure and the word line conductive structure by the dielectric layer results in the gate structure being a floating gate structure. This enables a charge to be selectively stored on the gate structure, even when power is removed from the word line conductive structure. The non-volatile memory cell structure along with a volatile memory cell structure are provided in the back end region of the semiconductor device, such that caching and long-term storage may be performed in the back end region of the semiconductor device.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A capacitorless dynamic random access memory (DRAM) cell may include a plurality of transistors. At least a subset of the transistors may include a channel layer that approximately resembles an inverted U shape, an ohm symbol (?) shape, or an uppercase/capital omega (?) shape. The particular shape of the channel layer provides an increased channel length for the subset of the transistors, which may reduce the off current and may reduce current leakage in the subset of the transistors. The reduced off current and reduced current leakage may increase data retention in the subset of the transistors and/or may increase the reliability of the subset of the transistors without increasing the footprint of the subset of the transistors. Moreover, the particular shape of the channel layer enables the subset of the transistors to be formed with a top-gate structure, which provides low integration complexity with other transistors in the capacitorless DRAM cell.

Abstract: The present invention provides a signal processing system and associated method. The signal processing system includes converter(s) for conversion between digital and analog, each converter includes multiple serially coupled units forming multiple frequency interfaces respectively associating with different frequencies, and each converter is partitioned, at a selected frequency interface, to a first portion and a second portion respectively formed in the first chip and the second chip. The partitioning frequency interface is selected to reduce implement cost.

Abstract: The present invention provides a signal processing system and associated method. The signal processing system includes converter(s) for conversion between digital and analog, each converter includes multiple serially coupled units forming multiple frequency interfaces respectively associating with different frequencies, and each converter is partitioned, at a selected frequency interface, to a first portion and a second portion respectively formed in the first chip and the second chip. The partitioning frequency interface is selected to reduce implement cost.

Abstract: The present invention provides a signal processing system and associated method. The signal processing system includes converter(s) for conversion between digital and analog, each converter includes multiple serially coupled units forming multiple frequency interfaces respectively associating with different frequencies, and each converter is partitioned, at a selected frequency interface, to a first portion and a second portion respectively formed in the first chip and the second chip. The partitioning frequency interface is selected to reduce implement cost.

Abstract: The present invention provides a signal processing system and associated method. The signal processing system includes converter(s) for conversion between digital and analog, each converter includes multiple serially coupled units forming multiple frequency interfaces respectively associating with different frequencies, and each converter is partitioned, at a selected frequency interface, to a first portion and a second portion respectively formed in the first chip and the second chip. The partitioning frequency interface is selected to reduce implement cost.

Abstract: A digital-to-analog converter for converting a digital signal into an analog signal is provided. The digital-to-analog converter includes a preprocessing unit, a gain controller, a modulator and an output unit. The preprocessing unit receives and oversamples the digital signal to generate an oversampled signal. The gain controller generates an adjusted signal with a gain function according to a reference signal associated with the oversampled signal when a specific condition is present. The modulator modulates the adjusted signal and generates a modulated signal. The output unit provides the analog signal to a load according to the modulated signal, wherein the analog signal gradually approaches to a specific level according to the gain function when the specific condition is present.

Abstract: A digital-to-analog converter for converting a digital signal into an analog signal is provided. The digital-to-analog converter includes a preprocessing unit, a gain controller, a modulator and an output unit. The preprocessing unit receives and oversamples the digital signal to generate an oversampled signal. The gain controller generates an adjusted signal with a gain function according to a reference signal associated with the oversampled signal when a specific condition is present. The modulator modulates the adjusted signal and generates a modulated signal. The output unit provides the analog signal to a load according to the modulated signal, wherein the analog signal gradually approaches to a specific level according to the gain function when the specific condition is present.