Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: A molded semiconductor device includes a semiconductor device and a molding material encapsulating the semiconductor device, wherein an upper surface of the molding material is substantially coplanar with an upper surface of the semiconductor device and comprises a groove at least partially surrounding the upper surface of the semiconductor device.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a first channel members being vertically stacked, a second channel members being vertically stacked, an n-type work function layer wrapping around each of the first channel members, a first p-type work function layer over the n-type work function layer and wrapping around each of the first channel members, a second p-type work function layer wrapping around each of the second channel members, a third p-type work function layer over the second p-type work function layer and wrapping around each of the second channel members, and a gate cap layer over a top surface of the first p-type work function layer and a top surface of the third p-type work function layer such that the gate cap layer electrically couples the first p-type work function layer and the third p-type work function layer.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: A method of fabricating a grinding tool includes providing an abrasive particle, and cutting the abrasive particle with a laser beam so that the cut abrasive particle has four tips adjacent to one another, a cavity of a generally cross shape extending between the four tips, and a material discharge surface at an end of the cavity. The laser beam is applied along a plurality of parallel first cutting lines and a plurality of parallel second cutting lines, the second cutting lines intersecting the first cutting lines, at least the first cutting lines being grouped into a first, a second and a third region, the second region being located between the first and third regions, a number of cutting passes repeated along each of the first cutting lines in each of the first and third regions increasing as the first cutting line is nearer to the second region, and the laser beam repeating a plurality of cutting passes along each of the first cutting lines in the second region.

Abstract: A grinding tool includes a substrate, and at least an abrasive particle affixed to the substrate. The abrasive particle has a base, and four tips adjacent to one another protruding from the base, the base having a cavity of a generally cross shape extending between the four tips, the cavity including a material discharge surface disposed between two adjacent ones of the four tips, the material discharge surface being located at an end of the cavity and adjacent to a side surface of the base, an inner material angle between the material discharge surface and the side surface being between about 120 degrees and about 160 degrees. Moreover, embodiments described herein include a method of manufacturing the grinding tool.

Abstract: A grinding tool includes a substrate having a surface provided with a plurality of openings, and a plurality of grinding studs. Each of the grinding studs includes a stud portion and an abrasive particle attached to each other, the stud portions being respectively attached into the openings, and the abrasive particles protruding outward from the surface, each of the abrasive particles having a pattern cut across a tip thereof to define multiple apexes adjacent to one another.

Abstract: A grinding tool includes a substrate, and at least an abrasive particle affixed to the substrate. The abrasive particle has a base, and four tips adjacent to one another protruding from the base, the base having a cavity of a generally cross shape extending between the four tips, the cavity including a material discharge surface disposed between two adjacent ones of the four tips, the material discharge surface being located at an end of the cavity and adjacent to a side surface of the base, an inner material angle between the material discharge surface and the side surface being between about 120 degrees and about 160 degrees. Moreover, embodiments described herein include a method of manufacturing the grinding tool.

Abstract: A grinding tool includes a substrate having a working surface, and a plurality of abrasive particles distributed over the working surface and protruding outward from the working surface, wherein at least some of the abrasive particles are machined to form abrasive particles respectively having an obliquely truncated pyramid shape. Some embodiments described herein also include a method of manufacturing the grinding tool.

Abstract: Provided is a CMP conditioner comprising: a substrate, multiple abrasive bars, and multiple slide blocks. The substrate is divided into a central surface and an outer surface. The central surface is a recessed part. The outer surface encompasses the central surface. Multiple mounting holes are recessed from the outer surface. The abrasive bars are each respectively mounted in the mounting holes. Each of the multiple abrasive bars comprises a bar body and an abrasive particle. The abrasive particle is mounted on a top surface of the abrasive bar. The multiple slide blocks are distributed among the mounting holes of the outer surface. Each of the multiple slide blocks comprises a slide dressing surface. The present invention utilizes the slide blocks to reduce the contact between the substrate and a polishing mat efficiently. The slide blocks may decrease dissolving out of metal components within the substrate and the pollution induced.

Abstract: A grinding tool includes a substrate having a surface provided with a plurality of openings, and a plurality of grinding studs. Each of the grinding studs includes a stud portion and an abrasive particle attached to each other, the stud portions being respectively attached into the openings, and the abrasive particles protruding outward from the surface, each of the abrasive particles having a pattern cut across a tip thereof to define multiple apexes adjacent to one another.

Abstract: A chemical mechanical polishing conditioner comprises a substrate and at least one abrasive unit. The abrasive unit is provided on the substrate, and the abrasive unit comprises a supporting layer, an abrasive layer and a stress-relief layer. The supporting layer is provided with a working face far away from the substrate and a non-working face opposite to the working face. The abrasive layer is provided on the working face of the supporting layer, and the abrasive layer is a first diamond-plated film formed by chemical vapor deposition method. The first diamond-plated film is provided with a plurality of abrasive tips. The stress-relief layer is provided on the non-working face of the supporting layer, and the stress-relief layer is a second diamond-plated film formed by chemical vapor deposition method. A thermal stress-relieving effect may be exerted by the stress-relief layer, so as to reduce warpage or deformation of the supporting layer.

Abstract: A grinding tool includes a substrate having a surface provided with a plurality of openings, and a plurality of grinding studs. Each of the grinding studs includes a stud portion and an abrasive particle attached to each other, the stud portions being respectively attached into the openings, and the abrasive particles protruding outward from the surface, each of the abrasive particles having a pattern cut across a tip thereof to define multiple apexes adjacent to one another. In some embodiments, methods of fabricating a grinding tool are also described.

Abstract: A hybridized CMP conditioner includes a base, a first abrasive unit and a plurality of second abrasive units. The first abrasive unit includes a first bonding layer, a substrate for abrasive unit provided on the first bonding layer and an abrasive layer provided on the substrate for abrasive unit. The abrasive layer is a diamond coating. The diamond coating is provided on the surface thereof with a plurality of abrasive tips. Each second abrasive unit includes a second bonding layer, a carrying post provided on the second bonding layer, an abrasive particle provided on the carrying post and an abrasive material-bonding layer provided between the carrying post and the abrasive particle. The CMP conditioner is provided with both excellent cutting force and flattening capability through the first abrasive unit provided with the abrasive layer and the second abrasive units provided with the abrasive particles.

Abstract: A grinding tool includes a rigid support body and a carrier substrate. The carrier substrate is attached to the support body, and is supported by the support body. Two opposing surfaces of the carrier substrate respectively define a working surface and a non-working surface. A plurality of first abrasive particles are affixed on the working surface, and a plurality of second abrasive particles are affixed on the non-working surface. The first abrasive particles have a first average size, and the second abrasive particles have a second average size smaller than the first average size. The carrier substrate is attached to the support body at the non-working surface. Moreover, a method of manufacturing the grinding tool is described herein.

Abstract: Provided is a chemical mechanical polishing (CMP) conditioner comprising: a substrate comprising a horizontal top surface and multiple abrasive units mounted on the horizontal top surface. Each abrasive unit comprises a base of the abrasive unit, an abrasive layer, and a binding layer. The base of the abrasive unit comprises an upper surface and a lower surface. The abrasive layer is formed on the upper surface and comprises multiple abrasive tips. The binding layer is formed between the lower surface and the substrate, and an inclined plane is formed towards the lower surface. The present invention further provides a method for manufacturing the CMP conditioner. The polishing capabilities of different regions of CMP conditioner can be regulated by the abrasive units. Then the CMP conditioner of the present invention satisfies the requirements in the current industry about different polishing capabilities.

Abstract: A grinding tool includes a substrate having a working surface, and a plurality of abrasive particles distributed across the working surface and protruding outward from the working surface, wherein at least some of the abrasive particles are machined to form abrasive particles respectively having a pyramid shape, the pyramid shape being a right square pyramid or a right hexagonal pyramid.