Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Abstract: A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.

Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Abstract: The disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a base pattern including a channel region and a drain region, a first semiconductor layer on the channel region of the base pattern, and a gate structure on the first semiconductor layer. The gate structure includes a first stack disposed on the first semiconductor layer and a second stack disposed on the first stack. The first stack includes a first sidewall adjacent to the drain region and a second sidewall opposite to the first sidewall in a first direction parallel to a top surface of the base pattern. The first sidewall is at a first distance from the second stack in the first direction, and the second sidewall is at a second distance from the second stack in the first direction. The first distance is greater than the second distance.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate having a front side and a back side opposite the front side. The semiconductor structure also includes a first contact metal layer disposed on the front side of the substrate. The semiconductor structure further includes a III-V compound semiconductor layer disposed between the substrate and the first contact metal layer. Moreover, the semiconductor structure includes a via hole penetrating through the substrate and the III-V compound semiconductor layer from the back side of the substrate. The bottom of the via hole is defined by the first contact metal layer, and the first contact metal layer includes molybdenum, tungsten, iridium, palladium, platinum, cobalt, ruthenium, osmium, rhodium, rhenium, or a combination thereof.

Abstract: The present disclosure relates to a method for aligning a smartphone providing NFC wireless power for charging a battery of a device, the method comprising: emitting, with a first NFC antenna of the smartphone, an NFC field for wirelessly charging the battery of the device comprising a second NFC antenna; obtaining, with the smartphone, a measured value of a signal representative of the NFC field strength between the smartphone and the device; determining, by the smartphone, a range of values of a plurality of ranges of values the measured value belongs; and emitting, by the smartphone, at least one notification signal to a user with a frequency determined by the determined range of values.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A light source module includes a circuit substrate, a plurality of light-emitting diodes, a cover layer and a plurality of first scattering particles. The plurality of light-emitting diodes is disposed on the circuit substrate. The cover layer covers the plurality of light-emitting diodes, and an upper surface of the cover layer has a plurality of recesses, wherein orthogonal projections of the plurality of recesses on the circuit substrate overlap the circuit substrate between the plurality of light-emitting diodes. The plurality of first scattering particles is located in the plurality of recesses.

Abstract: A connecting assembly is applied to connect a first housing and a second housing. The connecting assembly includes a general connecting member, a connecting base, and a clamping member. The general connecting member connects to the first housing. The general connecting member includes an accommodating portion and at least one opening. The accommodating portion is located inside the general connecting member. The opening is disposed on a side wall of the general connecting member and communicates with the accommodating portion. The connecting base is disposed on the second housing. The connecting base includes a main body disposed in the accommodating portion. The clamping member includes a flat portion and at least one clamping portion. The clamping portion extends from one end of the flat portion toward the connecting base, and the clamping portion passes through the opening and presses against the main body of the connecting base.

Abstract: An electronic device and a method of controlling multiple pieces of equipment are provided. The electronic device is coupled to an operating device, a first controlled device and a second controlled device. The electronic device includes an operating interface and a controlled interface. The operating interface is coupled to the operating device. The operating device includes a first operating area and a second operating area. The first operating area is configured to deliver a first operating signal. The second operating area is configured to deliver a second operating signal. The controlled interface is coupled to the first controlled device and the second controlled device. The first controlled device is controlled by the first operating signal. The second controlled device is controlled by the second operating signal.

Abstract: The present disclosure relates to a method for aligning a smartphone providing NFC wireless power for charging a battery of a device, the method comprising: emitting, with a first NFC antenna of the smartphone, an NFC field for wirelessly charging the battery of the device comprising a second NFC antenna; obtaining, with the smartphone, a measured value of a signal representative of the NFC field strength between the smartphone and the device; determining, by the smartphone, a range of values of a plurality of ranges of values the measured value belongs; and emitting, by the smartphone, at least one notification signal to a user with a frequency determined by the determined range of values.

Abstract: A method for manufacturing an electrical package is provided. The method include: providing a substrate having a first surface and a second surface opposite to the first surface, wherein the second surface has a first level difference; forming an adhesive layer on the second surface of the substrate, wherein the adhesive layer is configured to cover the second surface and provides a third surface spaced apart from the second surface of the substrate, wherein the third surface has a second level difference; disposing a tape on the third surface of the adhesive layer; and performing a removing operation on the first surface of the substrate; wherein the second level difference is smaller than the first level difference.

Abstract: An electronic device and a method of controlling multiple pieces of equipment are provided. The electronic device is coupled to an operating device, a first controlled device and a second controlled device. The electronic device includes an operating interface and a controlled interface. The operating interface is coupled to the operating device. The operating device includes a first operating area and a second operating area. The first operating area is configured to deliver a first operating signal. The second operating area is configured to deliver a second operating signal. The controlled interface is coupled to the first controlled device and the second controlled device. The first controlled device is controlled by the first operating signal. The second controlled device is controlled by the second operating signal.

Abstract: The present disclosure relates to a method for aligning a smartphone providing NFC wireless power for charging a battery of a device, the method comprising: emitting, with a first NFC antenna of the smartphone, an NFC field for wirelessly charging the battery of the device comprising a second NFC antenna; obtaining, with the smartphone, a measured value of a signal representative of the NFC field strength between the smartphone and the device; determining, by the smartphone, a range of values of a plurality of ranges of values the measured value belongs; and emitting, by the smartphone, at least one notification signal to a user with a frequency determined by the determined range of values.

Abstract: Provided is a device comprising a frequency demodulator and an amplitude demodulator. The device is configured to use, in a first mode, both the frequency demodulator and the amplitude demodulator in parallel and to activate a radio frequency identification (RFID) card mode or a Qi charger mode based on results provided by said demodulators.

Abstract: An online file transfer tasks scheduling method for processing multiple file path access requests in a network, the method including: sending at least one file path access request to a corresponding one of at least one file access service module, executing a processing procedure in each of the at least one file access service module to generate a task package according to each received file path access request, and using one or more task execution units to process one or more of the task packages; and using a task execution unit balance module to periodically evaluate a load ratio between a plurality of the file access service modules, and determining the number of the task execution units for each file access service module according to the load ratio.