Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: An information handling system includes a memory and a processor. The memory stores a current basic input/output system (BIOS) firmware image. During a regular boot mode of the information handling, the processor creates a first set of tables associated with the current BIOS firmware image, stores the first tables to the memory, and receives a BIOS firmware update image. During a BIOS update boot mode of the information handling system, the processor creates a second plurality of tables associated with the BIOS firmware update image, and compares the first and second tables. In response to a difference being determined between the first and second tables, the processor aborts the BIOS update boot mode and generate an error log.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer feature and a top surface of the second spacer feature extending above a top surface of the gate structure, a gate self-aligned contact (SAC) dielectric feature over the first spacer feature and the second spacer feature, a contact etch stop layer (CESL) over the gate SAC dielectric feature, a dielectric layer over the CESL, a gate contact feature extending through the dielectric layer, the CESL, the gate SAC dielectric feature, and between the first spacer feature and the second spacer feature to be in contact with the gate structure, and a liner disposed between the first spacer feature and the gate contact feature.

Abstract: The present invention provides a data-storage device. The data-storage device includes a flash memory and a controller. The flash memory includes a plurality of blocks, and each of the blocks includes a plurality of pages. The controller is arranged to receive an erase signal from a host, and enable the flash memory to sequentially execute an erasing process on at least one first block of the blocks in response to the erase signal, wherein a specific page of the first block has been written by a predetermined value and the other pages of the first block in exception to the specific page have been erased after the erasing process executed on the first block is completed.

Abstract: The present invention provides a data-storage device. The data-storage device includes a flash memory and a controller. The flash memory includes a plurality of blocks, and each of the blocks includes a plurality of pages. The controller is arranged to receive an erase signal from a host, and enable the flash memory to sequentially execute an erasing process on at least one first block of the blocks in response to the erase signal, wherein a specific page of the first block has been written by a predetermined value and the other pages of the first block in exception to the specific page have been erased after the erasing process executed on the first block is completed.

Abstract: A page zooming method for an electronic device includes, firstly, generating operation signals in response to a touch operation applied on a page displayed on a touch screen of the electronic device. Secondly, one touch operation is determined to be a zoom-triggering gesture when a duration of time of pressing the touch screen on one touching point is longer than a first preset duration of time. Thirdly, one slide operation is identified according to the operation signals generated by the touch screen in response to the slide operation. Next, a zooming type and a zooming ratio are determined according to the zoom-triggering gesture and the slide operation. Lastly, the page is zoomed according to the zooming type and zooming ratio. An electronic device using the page zooming method is also provided.

Abstract: An exemplary provided screen unlocking method for an electronic device with a touch screen comprises the following steps: displaying a screen unlocking interface on the touch screen; generating unlocking signals in response to an unlocking operation applied on the touch screen; determining whether the enduring touch time period of the unlocking operation reaches a predetermined touch time period, and whether the touch area of the unlocking operation reaches a predetermined touch area, according to the unlocking signals; and unlocking the touch screen when the enduring touch time period of the unlocking operation reaches the predetermined touch time period, and the touch area of the unlocking operation reaches the predetermined touch area. An electronic device using the screen unlocking method is also provided.

Abstract: A page processing method for an electronic device is provided. The method includes the steps of: displaying a first cube consisting of a plurality of stacked layers, the stacked layers comprising a top layer displaying a current active icon group and remaining layers beneath the top layer associated with corresponding inactive icon groups; displaying a second cube consisting of a plurality of stacked layers, the stacked layers each associated with a inactive icon group; determining the touched region; determining the type of the touch by the user; retrieving a target page stored in the storage unit or creating a target page; creating at least one new icon group; and displaying the target page on the page display region, and updating the icon groups on the first and second cubes. An electronic device using the page processing method is also provided.

Abstract: A page processing method for an electronic reader including a touch screen is provided. The method comprising: displaying a page of a selected file on the touch screen in response to a user's operation; detecting a touch on the displayed page, and generating a signal associated therewith; determining whether the touch of the user is an earmark gesture according to the signal; adding an earmark to the displayed page if the touch of the user is an earmark gesture; displaying the earmarked page on the touch screen; gathering all the earmarked pages and generating an index file containing the earmarked pages; and storing the index file. An electronic reader using the page processing method is also provided.

Abstract: An electronic device with a touch screen device configured to display succeeding or preceding desktop screens. Each desktop screen includes opposite boundaries and displays icons. A touched and dragged icon may be added to any desired desktop screen. A method of moving icons and one or more computer readable storage media comprising computer executable instructions are also disclosed.

Abstract: An electronic device includes a storage unit, a touch display unit and a processing unit. The storage unit stores a parameter table comprising a plurality of parameters, and each parameter includes a first group of coordinates to determine the first part of a page and a second group of coordinates to determine the second part of the page. When the user's touch crosses a predetermined area, the processing unit obtains the parameters in sequence, and produces a tear-off-page figure on the first part of a current page, to cover the second part with a second area of the following page to display a combined page. Then the processing unit may store or delete the tore-off page according to a user selection after the next page is displayed in full. A related method is also provided.